• Korean Journal of Soil Science and Fertilizer
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• v.44 no.1
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• pp.15-21
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• 2011

Transport of heavy metals such as Cd is affected by several rate-limiting processes including adsorption and desorption by exchange reactions in soils. In this study, column transport and batch kinetic experiments were performed to assess Cd mobility in a double-layered soil with a reclaimed saline and sodic soil (SSS) as top soil and macroporous granule (MPG) as a bottom layer. For individual soil layer having different physical and chemical properties, Cd was considered to be nonlinear reactivity with the soil matrix in layered soils. The dispersive equation for reactive solutes was solved with three types of boundary conditions for the interface between soil layers. The adsorption of Cd with respect to the saline-sodic sandy loam and the MPG indicated that the nature of the sites or the mechanisms involved in the sorption process of Cd was different and the amounts of Cd for both of samples increases with increasing amounts of equilibrium concentration whereas the amount of Cd adsorbed in saline-sodic sandy loam soil was higher than that in MPG. The results of breakthrough curve indicating relative Cd retardation accompanied by layer material and sequence during leaching showed that the number of pore volumes to reach the maximum relative concentration of 1 increased in the order of MPG, SSS, and double layer of SSS-MPG. Breakthrough curves (BTCs) from column experiments were well predicted with our double-layered model where independently derived solute physical and retention parameters were implemented.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.46-53
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• 1998

A new method to form the double structured active layers of a-Si/a-SiN$_{x}$ of polycrystalline thin film transistor is proposed and poly-Si TFTs employed double structure active film are fabricated. Nitrogen ions were added to bottom amorphous silicon active film(a-SiN$_{x}$ ) and pure a-Si film deposition on a-SiN$_{x}$ was followed. The XeCl excimer laser was irradiated to crystallize double structure active film. The grain growth of upper a-Si film was also promoted in the double structured active layers of a-Si/a-SiN$_{x}$ due to the mitigation of solidification process of lower a-SiN$_{x}$ layer. Our experimental results show that the ratio of NH$_3$/SiH$_4$ is required to maintain below 0.11 for the reduction of contact resistance of n$^{+}$ poly-SiN$_{x}$ layer.r.

• Steel and Composite Structures
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• v.35 no.4
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• pp.475-494
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• 2020

Presented are experimental results from 24 full-scale push test specimens to study the behaviour of composite beams with trapezoidal profiled sheeting laid transverse to the beam axis. The tests use a single-sided horizontal push test setup and are divided into two series. First series contained shear loading only and the second had normal load besides shear load. Four parameters are studied: the effect of wire mesh position and number of its layers, placing a reinforcing bar at the bottom flange of the deck, normal load and its position, and shear stud layout. The results indicate that positioning mesh on top of the deck flange or 30 mm from top of the concrete slab does not affect the stud's strength and ductility. Thus, existing industry practice of locating the mesh at a nominal cover from top of the concrete slab and Eurocode 4 requirement of placing mesh 30 mm below the stud's head are both acceptable. Double mesh layer resulted in 17% increase in stud strength for push tests with single stud per rib. Placing a T16 bar at the bottom of the deck rib did not affect shear stud behaviour. The normal load resulted in 40% and 23% increase in stud strength for single and double studs per rib. Use of studs only in the middle three ribs out of five increased the strength by 23% compared to the layout with studs in first four ribs. Eurocode 4 and Johnson and Yuan equations predicted well the stud strength for single stud/rib tests without normal load, with estimations within 10% of the characteristic experimental load. These equations highly under-estimated the stud capacity, by about 40-50%, for tests with normal load. AISC 360-16 generally over-estimated the stud capacity, except for single stud/rib push tests with normal load. Nellinger equations precisely predicted the stud resistance for push tests with normal load, with ratio of experimental over predicted load as 0.99 and coefficient of variation of about 8%. But, Nellinger method over-estimated the stud capacity by about 20% in push tests with single studs without normal load.

• Bulletin of the Society of Naval Architects of Korea
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• v.1 no.1
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• pp.9-16
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• 1964

As a pre-study for researches on powering characteristics of straight-framed V-bottom hull forms for usual commercial vessels, practicability of such a hull is investigated from viewpoints of over-all ship economy. For this purpose, a trawler hull of straight-elements with double chines, SV(T)-1, similar to Prof. Nevitt's W-8 in size and hull form coefficients was designed and tested at the SNU Ship Model Towing Tank for resistance measurements. The result is given in Fig.3 together with those of W-8 and other equivalent hulls of double curvature, such as FAO 135a-173, Doust and Takgi. The curves of the latters are reproduction of Prof. Nevitt's analysis, and given for comparison purpose. With in speed range of $9.0{\sim}10.5$ konts the resistance coefficients of SV(T)-1 are $18{\sim}25%$ higher than those of W-8, and $5{\sim}20%$ and $12{\sim}14%$ higher than those of FAO 135a-173 and Doust respectively. SV(T)-1, however, is slightly superior in resistance characteristics than Takagi's equivalent hull within the speed range. On the other hand, an equation for reduction rates of hull construction cost required to compensate for propulsion power increase in straight-elements hulls was derived from the definition of the economic efficiency of commercial vessels. The solution of the equation is given in Fig.4 graphically, from which it is known that $10{\sim}20%$ increase in propulsion power can be compensated by $8{\sim}16%$ reduction in hull construction cost. Considering simplicity and less equipments required in construction of straight -elements hulls, the author does argue for attainability of the above reduction rates in hull construction cost. Consequently, it is concluded that there is clear feasibility to adopt straight-elements hulls for usual commercial vessels of medium and small-size. And a further research will be done to obtain reliable data for chine shapes having good flowliness with the flow around ships depending on ship's size and speed.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.263-266
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• 2000

This paper is focused on the fabrication of reliable Al/$TiO_2-SiO_2$/Mo antifuse, which could operate at low voltage along with the improvement in on/off state properties. Mo metal as the bottom electrode had smooth surface and high melting point, and was being kept as-deposited $SiO_2$film stable. The breakdown voltage of TiO_2-SiO_2$ stacked antifuse was better than that of same-thickness (100 $\AA$) $SiO_2$antifuse because of Ti diffusion in $SiO_2$. The improving breakdown-voltage and on-resistance can be obtained as well as the influence of hillock in the bottom metal is reduced by using double insulator. Low on-resistance (65 $\Omega$) and low programming voltage (9.0 V) can be obtained in these antifuses with 250 $\AA$ double insulator.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.4
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• pp.903-908
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• 2015

This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.581-586
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• 2015

This paper has analyzed the variation of subthreshold swing for the ratio of channel length and thickness for asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factors to control the short channel effects increase since top and bottom gate structure can be fabricated differently. The degradation of transport property due to rapid increase of subthreshold swing can be specially reduced in the case of reduction of channel length. However, channel thickness has to be reduced for decrease of channel length from scaling theory. The ratio of channel length vs. thickness becomes the most important factor to determine subthreshold swing. To analyze hermeneutically subthreshold swing, the analytical potential distribution is derived from Poisson's equation, and conduction path and subthreshold swing are calculated for various channel length and thickness. As a result, we know conduction path and subthreshold swing are changed for the ratio of channel length vs. thickness.

• Journal of the Korea institute for structural maintenance and inspection
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• v.19 no.6
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• pp.10-17
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• 2015

In this study, to examine seismic reinforcement effect of a school building constructed prior to application of seismic design, a Double I-type damper supported by wall was installed to perform comparative analysis on existing non-seismic designed RC frame. As a result of experiment, while non-seismic designed specimen showed rapid reduction in strength and brittle shear destruction as damages were focused on top and bottom of left and right columns, reinforced specimen showed hysteretic characteristics of a large ellipse with great energy absorption ability, exhibiting perfectly behavior with increased strength and stiffness from damper reinforcement. In addition, as a result of comparing stiffness reduction between the two specimens, specimen reinforced by shear wall type damper was effective in preventing stiffness reduction. Energy dissipation ability of specimen reinforced by Double I-type damper was about 3.5 times as high as energy dissipation ability of non-reinforced specimen. Such enhancement in energy dissipation ability is considered to be the result of improved strength and deformation.