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http://dx.doi.org/10.6109/jkiice.2014.18.5.1143

Analysis of Subthreshold Swing for Doping Distribution Function of Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.5, 2014 , pp. 1143-1148 More about this Journal
Abstract
This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.
Keywords
asymmetric double gate; subthreshold swing; Gaussian distribution; doping distribution function; Poisson equation;
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Times Cited By KSCI : 1  (Citation Analysis)
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