• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.98-107
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• 2013

This work describes a 13b 100 MS/s 0.13 um CMOS four-stage pipeline ADC for 3G communication systems. The proposed SHA-free ADC employs a range-scaling technique based on switched-capacitor circuits to properly handle a wide input range of $2V_{P-P}$ using a single on-chip reference of $1V_{P-P}$. The proposed range scaling makes the reference buffers keep a sufficient voltage headroom and doubles the offset tolerance of a latched comparator in the flash ADC1 with a doubled input range. A two-step reference selection technique in the back-end 5b flash ADC reduces both power dissipation and chip area by 50%. The prototype ADC in a 0.13 um CMOS demonstrates the measured differential and integral nonlinearities within 0.57 LSB and 0.99 LSB, respectively. The ADC shows a maximum signal-to-noise-and-distortion ratio of 64.6 dB and a maximum spurious-free dynamic range of 74.0 dB at 100 MS/s, respectively. The ADC with an active die area of 1.2 $mm^2$ consumes 145.6 mW including high-speed reference buffers and 91 mW excluding buffers at 100 MS/s and a 1.3 V supply voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.63-73
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• 2015

This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.55-64
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• 2006

This work proposes a calibration-free 14b 70MS/s 0.13um CMOS ADC for high-performance integrated systems such as WLAN and high-definition video systems simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs signal insensitive 3-D fully symmetric layout techniques in two MDACs for high matching accuracy without any calibration. A three-stage pipeline architecture minimizes power consumption and chip area at the target resolution and sampling rate. The input SHA with a controlled trans-conductance ratio of two amplifier stages simultaneously achieves high gain and high phase margin with gate-bootstrapped sampling switches for 14b input accuracy at the Nyquist frequency. A back-end sub-ranging flash ADC with open-loop offset cancellation and interpolation achieves 6b accuracy at 70MS/s. Low-noise current and voltage references are employed on chip with optional off-chip reference voltages. The prototype ADC implemented in a 0.13um CMOS is based on a 0.35um minimum channel length for 2.5V applications. The measured DNL and INL are within 0.65LSB and l.80LSB, respectively. The prototype ADC shows maximum SNDR and SFDR of 66dB and 81dB and a power consumption of 235mW at 70MS/s. The active die area is $3.3mm^2$.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.27-38
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• 2016

This work proposes a 12b 30MS/s 0.18um CMOS SAR ADC based on low-power composite switching with an active die area of $0.16mm^2$. The proposed composite switching employs the conventional $V_{CM}$-based switching and monotonic switching sequences while minimizing the switching power consumption of a DAC and the dynamic offset to constrain a linearity of the SAR ADC. Two equally-divided capacitors topology and the reference scaling are employed to implement the $V_{CM}$-based switching effectively and match an input signal range with a reference voltage range in the proposed C-R hybrid DAC. The techniques also simplify the overall circuits and reduce the total number of unit capacitors up to 64 in the fully differential version of the prototype 12b ADC. Meanwhile, the SAR logic block of the proposed SAR ADC employs a simple latch-type register rather than a D flip-flop-based register not only to improve the speed and stability of the SAR operation but also to reduce the area and power consumption by driving reference switches in the DAC directly without any decoder. The measured DNL and INL of the prototype ADC in a 0.18um CMOS are within 0.85LSB and 2.53LSB, respectively. The ADC shows a maximum SNDR of a 59.33dB and a maximum SFDR of 69.83dB at 30MS/s. The ADC consumes 2.25mW at a 1.8V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.117-124
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• 2009

This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.126-142
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• 2016

This paper presents a wide-frequency-range, low-power transceiver with an automatic impedance-matching calibration for TV-white-space (TVWS) application. The wide-range automatic impedance matching calibration (AIMC) is proposed for the Drive Amplifier (DA) and LNA. The optimal $S_{22}$ and $S_{11}$ matching capacitances are selected in the DA and LNA, respectively. Also, the Single Pole Double Throw (SPDT) switch is integrated to share the antenna and matching network between the transmitter and receiver, thereby minimizing the systemic cost. An N-path filter is proposed to reject the large interferers in the TVWS frequency band. The current-driven mixer with a 25% duty LO generator is designed to achieve the high-gain and low-noise figures; also, the frequency synthesizer is designed to generate the wide-range LO signals, and it is used to implement the FSK modulation with a programmable loop bandwidth for multi-rate communication. The TVWS transceiver is implemented in $0.13{\mu}m$, 1-poly, 6-metal CMOS technology. The die area of the transceiver is $4mm{\times}3mm$. The power consumption levels of the transmitter and receiver are 64.35 mW and 39.8 mW, respectively, when the output-power level of the transmitter is +10 dBm at a supply voltage of 3.3 V. The phase noise of the PLL output at Band 2 is -128.3 dBc/Hz with a 1 MHz offset.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.69-76
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• 2008

This work proposes a 12b 1kS/s 65uA 0.35um CMOS algorithmic ADC for sensor interface applications such as accelerometers and gyro sensors requiring high resolution, ultra-low power, and small size simultaneously. The proposed ADC is based on an algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. Two versions of ADCs are fabricated with a conventional open-loop sampling scheme and a closed-loop sampling scheme to investigate the effects of offset and 1/f noise during dynamic operation. Switched bias power-reduction techniques and bias circuit sharing reduce the power consumption of amplifiers in the SHA and MDAC. The current and voltage references are implemented on chip with optional of-chip voltage references for low-power SoC applications. The prototype ADC in a 0.35um 2P4M CMOS technology demonstrates a measured DNL and INL within 0.78LSB and 2.24LSB, and shows a maximum SNDR and SFDR of 60dB and 70dB in versionl, and 63dB and 75dB in version2 at 1kS/s. The versionl and version2 ADCs with an active die area of $0.78mm^2$ and $0.81mm^2$ consume 0.163mW and 0.176mW at 1kS/s and 2.5V, respectively.

• Journal of the Society of Naval Architects of Korea
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• v.48 no.6
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• pp.528-538
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• 2011

As a forming method for curved hull plates more efficient than the flame bending, mechanical bending using multi point press forming and die-less forming is discussed in this paper. the mechanical forming is a flexible manufacturing system for automatically forming of hull parts. It is especially suited to varied curved parts. This paper discusses a multiple point pressing machine composed of a pair of reconfigurable punches in order to achieve the rapid forming of curved hull plates using division forming and presents how forming information is obtained from the given design surface. Although the mechanical forming can be efficient in the metal forming, spring back after pressing is a phenomenon which must be carefully considered when quantifying the process variables. If the spring back is not accurately controlled, the fabricated shell plate cannot meet assembly tolerance. This paper describes the principles to calculate the proper stroke of each punch at the divided areas. the strokes are determined by an iterative process of sequential pressing and spring back compensation from an unfolded flat shape to its given design surface. FEA(finite element analysis) is used to simulate the spring back of the plate and the IDA(iterative displacement adjustment) method adjusts the offset of pressing punches from the deformation results and the design surface. The shape deviations of two surfaces due to spring back are compensated by integrated system using FEA and IDA method. For the practical application, It is aimed to develop an integrated system that can automatically perform the compensation process and calculate strokes of punches of the double sides' reconfigurable multiple-press machine and some experimental results obtained with mechanical bending are presented.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.98-106
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• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.21-31
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• 2010

This paper presents a design of PLL and SSCG for reducing the EMI effect at the electronic machinery and tools for DisplayPort application. This system is composed of the essential element of PLL and Charge-Pump2 and Reference Clock Divider to implement the SSCG operation. In this paper, 270MHz/162MHz dual-mode PLL that can provide 10-phase and 1.35GHz/810MHz PLL that can reduce the jitter are designed for 2.7Gbps/162Gbps DisplayPort application. The jitter can be reduced drastically by combining 270MHz/162MHz PLL with 2-stage 5 to 1 serializer and 1.35GHz PLL with 2 to 1 serializer. This paper propose the frequency divider topology which can share the divider between modes and guarantee the 50% duty ratio. And, the output current mismatch can be reduced by using the proposed charge-pump topology. It is implemented using 0.13 um CMOS process and die areas of 270MHz/162MHz PLL and 1.35GHz/810MHz PLL are $650um\;{\times}\;500um$ and $600um\;{\times}\;500um$, respectively. The VCO tuning range of 270 MHz/162 MHz PLL is 330 MHz and the phase noise is -114 dBc/Hz at 1 MHz offset. The measured SSCG down spread amplitude is 0.5% and modulation frequency is 31kHz. The total power consumption is 48mW.