• 대한전자공학회논문지SD
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• 제39권4호
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• pp.1-9
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• 2002

DRAM에서 셀 파라메터들의 확률 분포를 고려하여 데이터 보유 시간에 대한 분포 특성을 계산하였다. 셀 파라메터와 셀 내부 전압의 과도 특성으로부터 데이터 보유 시간의 식을 유도하였다. 접합 공핍 영역에서 발생하는 누설 전류의 분포 특성은 재결합 트랩의 에너지 분포로, 셀 캐패시턴스 분포 특성은 유전체 성장에서 표면 반응 에너지의 분포 특성으로, 그리고 sense amplifer의 감도를 각각의 독립적인 확률 변수로 보고, monte carlo 시뮬레이션을 이용하여, 셀 파라메터 값들의 확률적 분포와, DRAM 셀들의 데이터 보유 시간에 대하여cumulative failure bit의 분포함수를 계산하였다 특히 sense amplifier의 감도 특성이 데이터 보유 시간 분포의 tail bit에 상당히 영향을 미침을 보였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• 전자공학회논문지A
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• 제30A권9호
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• pp.59-70
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• 1993

An efficient test method based on march test is presented to cover line leakage failures associated with bit and word lines or mega bit DRAM chips. A modified column march (Y-march) pattern is derived to improve fault coverage against the data retention failure. Time delay concept is introduced to develop a new column march test algorithm detecting various data retention failures. A built-in test circuit based on the column march pattern is designed and verified using logic simulation, confirming correct test operations.

• 한국전자통신학회논문지
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• 제7권4호
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• pp.833-837
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• 2012

SC1(Standard Cleaning) 시간을 줄여 STI 측벽에서의 실리콘 손실 및 과도절개를 최소화하여 DRAM에서의 데이터 유지시간을 증가시키는 방법을 제안한다. SC1 시간 최적화를 통해 STI 상층 모서리부에서의 기생 전기장을 약화시킴으로서 Inverse Narrow Width 효과를 감소시키면 셀 트랜지스터의 Subthreshold 누설의 증가없이 채널 도핑농도가 감소하게 된다. 이것은 셀 접합에서 P-Well간 공핍 영역에서의 전기장을 최소화하여 일드나 데이터 유지시간의 증가를 보여 주었다.

• 대한치과교정학회지
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• 제42권5호
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• pp.255-262
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• 2012

Objective: We aimed to compare the retention characteristics of Essix and Hawley retainers. Methods: Adolescents undergoing fixed appliance treatment at 2 centers were recruited for this study. Twenty-two patients (16 women and 6 men) wore Essix retainers (Essix group) while 20 (14 women and 6 men) wore Hawley retainers (Hawley group). The mean retention time was 1 year, and the mean follow-up recall time for both groups was 2 years. Two qualified dental examiners evaluated the blind patient data. Maxillary and mandibular dental casts and lateral cephalograms were analyzed at 4 stages: pretreatment (T1), post-treatment (T2), post-retention (T3), and follow-up (T4). Results: The results revealed that Essix appliances were more efficient in retaining the anterior teeth in the mandible during a 1-year retention period. The irregularity index increased in both arches in both groups after a 2-year post-retention period. The mandibular arch lengths increased during treatment and tended to return to their original value after retention in both groups; however, these changes were statistically significant only in the Hawley group. Cephalometric variables did not show any significant differences. Conclusions: The retention characteristics of both Essix and Hawley retainers are similar.

• 디지털융복합연구
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• 제16권10호
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• pp.261-270
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• 2018

본 연구는 기혼 여성간호사를 대상으로 재직의도에 대한 직장-가정 갈등과 사회적 지지의 영향을 확인하기 위하여 시도되었다. 연구 대상자는 C시의 종합병원에 근무하는 기혼 여성 간호사 156명이며 자료수집은 2017년 9월 1일부터 15일까지 하였다. 자료는 SPSS 23.0을 이용하여 빈도, t-test, one-way ANOVA, 피어슨 상관계수, 다중회귀분석을 하였다. 연구결과 재직의도에 영향을 주는 요인은 시간갈등, 동료지지, 자녀수 한명 이상, 책임간호사, 상사지지 순이었으며 이들의 설명력은 37.3%로 나타났다(F=11.25, p<.001). 본 연구에서 시간갈등은 음의 영향을, 동료지지와 상사지지는 양의 영향을 재직의도에 미치는 것을 보여주었다. 이러한 결과는 재직의도를 높이는 새로운 전략개발에 도움이 될 것이다. 기혼 여성간호사의 재직의도에 영향을 미치는 다른 요인을 확인하기 위한 후속연구가 필요하다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.69-75
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• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• 대한전자공학회논문지SD
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• 제37권5호
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• pp.1-8
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• 2000

PZT seed에 의해 형성된 단결정립 PZT 박막을 이용하여 Pt/PZT/Pt 구조에서의 피로(fatigue) 및 정보 유지(data retention) 특성에 관하여 연구하였다. 피로 특성의 경우 1㎒의 주파수에서 ±10V의 square wave를 인가하여 측정한 결과 2×10/sup 11/ cycle 동안 전혀 특성의 변화가 관찰되지 않았으며, 정보 유지 능력의 경우 상온에서 30000초 동안 기억 상태의 변화가 없었으며, 고온에서의 retention 측정으로 계산된 활성화 에너지로부터 구한 상온에서의 20% 잔류분극간 감소를 보이는 시간은 6.6×10/sup 7/ 년이었다.

• Bulletin of the Korean Chemical Society
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• 제26권4호
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• pp.629-633
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• 2005

In the reversed-phase chromatography, the retention time of sample was investigated based on the molecular structure of compound. Several descriptors that were related to retention factors were selected, and then the values of descriptors were calculated with several softwares. The effect of retention factor was measured with calculated values, and the results were obtained that each descriptors of molecular structure of compound have different effect on the retention factor. Therefore, the empirical equation for seven types of descriptors considered was obtained, and it has high values of correlation coefficient. Furthermore, the experimental data and calculated values have good agreement.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.1-14
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• 2001

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.