• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2747-2753
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• 2011

In this paper, a PWM current-mode DC-DC boost converter for mobile phone flash application has been proposed. The converter which is operated with 5 Mhz high switching frequency is capable of reducing mounting area of passive devices such as inductor and capacitor, consequently is suitable for compact mobile phones. This boost converter consists of a power stage and a control block. Circuit elements of the power stage are inductor, output capacitor, MOS transistors and feedback resistors. Meanwhile, the control block consists of pulse width modulator, error amplifier, oscillator etc. Proposed boost converter has been designed and verified in a $0.5\;{\mu}m$ 1-poly 2-metal CMOS process technology. Simulation results show that the output voltage is 4.26 V in 3.7 V input voltage, output current 100 mA which is larger than 25 ~ 50 mA in conventional 500 Khz driven converter when the duty ratio is 0.15.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.2
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• pp.168-175
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• 2017

In this paper, a 5V small-area NMOS-diode eFuse OTP memory cell is proposed. This cell which is used in PMICs consists of a 5V NMOS transistor and an eFuse link as a memory part, based on a BCD process. Also, a regulated voltage of V2V ($=2.0V{\pm}10%$) instead of the conventional VDD is used to the pull-up loads of a VREF circuit and a BL S/A circuit to obtain a wider operational voltage range of the eFuse memory cell. When this proposed cells are used in the simulation, their sensing resistances are found to be $15.9k{\Omega}$ and $32.9k{\Omega}$, in the normal read mode and in the program-verify-read mode, respectively. Furthermore, the read current flowing through a non-blown eFuse is restricted to $97.7{\mu}A$. Thus, the eFuse link of a non-blown eFuse OTP memory cell is kept non-blown. The layout area of the designed 1kb eFuse OTP memory IP based on Dongbu HiTek's BCD process is $168.39{\mu}m{\times}479.45{\mu}m(=0.08mm^2)$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.8 no.4
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• pp.310-318
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• 2015

In this paper, dual-port eFuse OTP (one-time programmable) memory cells with smaller cell sizes are used, a single VREF (reference voltage) is used in the designed eFuse OTP IP (intellectual property), and a BL (bit-line) sensing circuit using a S/A (sense amplifier) based D F/F is proposed. With this proposed sensing technique, the read current can be reduced to 3.887mA from 6.399mA. In addition, the sensing resistances of a programmed eFuse cell in the program-verify-read and read mode are also reduced to $9k{\Omega}$ and $5k{\Omega}$ due to the analog sensing. The layout size of the designed 32-bit eFuse OTP memory is $187.845{\mu}m{\times}113.180{\mu}m$ ($=0.0213{\mu}m2$), which is confirmed to be a small-area implementation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.100-105
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• 2010

A multi-band low noise amplifier (LNA) is designed in 90 nm RF CMOS process for 3GPP LTE (3rd Generation Partner Project Long Term Evolution) applications. The designed multi-band LNA covers the eight frequency bands between 1.85 and 2.8 GHz. A tunable input matching circuit is realized by adopting a switched capacitor array at the LNA input stage for providing optimum performances across the wide operating band. Current steering technique is adopted for the gain control in three steps. The performances of the LNA are verified through post-layout simulations (PLS). The LNA consumes 17 mA at 1.2 V supply voltage. It shows a power gain of 26 at the normal gain mode, and provides much lower gains of 0 and -6.7 in the bypass-I and -II modes, respectively. It achieves a noise figure of 1.78 dB and a IIP3 of -12.8 dBm over the entire band.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.111-118
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• 2008

In this paper, novel latch-up prevention method that employs power-up sequential switches has been proposed to relieve latch-up problem in liquid crystal display (LCD) driver ICs. These sequential switches are inserted in the 2'nd and 3'rd boosting stages, and are used to short the emitter-base terminals of parasitic p-n-p-n circuit before relevant boosting stages are activated during power-up sequence. To verily the performance of the proposed method, test chips were designed and fabricated in a 0.13-um CMOS process technology. The measurement results indicated that, while the conventional LCD driver If entered latch-up mode at $50^{\circ}C$ accompanying a significant amount of excess current, the driver IC adopting the proposed method showed no latch-up phenomenon up to $100^{\circ}C$ and maintained normal current level of 0.9mA.

• Journal of IKEEE
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• v.24 no.3
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• pp.803-813
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• 2020

This paper presents a high efficiency resonant flyback converter using a single-chip microcontroller. The proposed converter primary performs the resonant switching by applying the asymmetrical pulse-width modulation (APWM) to the half-bridge power topology. And the converter secondary uses the diode flyback rectifier as its power topology and operates with the zero current switching (ZCS). Thus the proposed converter achieves high efficiency. The total structure of proposed converter is very simple because it uses a single-chip microcontroller and bootstrap circuit for its control and drive, respectively. First, this paper describes the converter operation according to each operation mode and shows its steady-state analysis. And the software control algorithm and drive circuits operating the proposed converter are explained. Then, the operation characteristics of proposed converter are shown through the experimental results of an implemented prototype based on each explanation.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.261-265
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• 2005

This paper describes the DC-DC Converter for Ancillary Power Supply in Hybrid Electric Vehicle. DC-DC Converter is used for charging 12V auxiliary battery supplying electric power to head ramp, audio, ECU etc in automobiles. used DC-DC Converter Topology is PS-ZVS FB(Phase Shifted Zero Voltage Switching Full-Bridge) to reduce switching loss and EMI noise induced by high frequency operating condition. And For easy compensation and stable system response characteristic, current mode control method including slope compensation is employed. Constant current / constant voltage charging control method guarantee stable electric charging of auxiliary battery. Simulation toll PSIM6.0 is used for initial circuit parameter settings and H/W debuging. Thermal problems of Switching components in DC-DC Converter is improved by using Thermo Tracer.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.6
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• pp.52-59
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• 2010

As electric power demand of customers is constantly increasing, more bulk power systems are needed to install in a network. By development of renewable energies and high-efficient facilities and deregulated electricity market, moreover, the amount of distributed resource is considerably increasing in distribution network consequently. Also, distribution network has become more and more complex as mesh network to improve the distribution system reliability and increase the flexibility and agility of network operation. These changes make fault current increase. Therefore, the fault current will exceed a circuit breaker capacity. In order to solve this problem, replacing breaker, changing operation mode of system and rectifying transformer parameters can be taken into account. The SFCL(Superconducting Fault Current Limiter) is one of the most promising power apparatus. This paper proposes a methodology for on optimal location of SFCL. This place is defined as considering the decrement of fault current by component type and the increment of reliability by customer type according to an location of SFCL in a distribution network connected with DG(Distributed Generation). With case studies on method of determining optimal location for SFCL applied to a radial network and a mesh network respectively, we proved that the proposed method is feasible.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.6
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• pp.1154-1162
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• 2016

This paper proposes a fast-transient digital LDO(Low dropout) regulator with binary-weighted current control technique. Conventional digital LDO takes a long time to stabilize the output voltage, because it controls the amount of current step by step, thus ringing problem is generated. Binary-weighted current control technique rapidly stabilizes output voltage by removing the ringing problem. When output voltage reliably reaches the target voltage, It added the FRZ mode(Freeze) to stop the operation of digital LDO. The proposed fast response digital LDO is used with a slow response DC-DC converter in the system which rapidly changes output voltage. The proposed digital controller circuit area was reduced by 56% compared to conventional bidirectional shift register, and the ripple voltage was reduced by 87%. A chip was implemented with a $0.18{\mu}F$ CMOS process. The settling time is $3.1{\mu}F$ and the voltage ripple is 6.2mV when $1{\mu}F$ output capacitor is used.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2359-2368
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• 2013

In this paper, an IRD (internal read data) circuit preventing the reentry into the read mode while keeping the read-out DOUT datum at power-up even if noise such as glitches occurs at signal ports such as an input signal port RD (read) when a power IC is on, is proposed. Also, a pulsed WL (word line) driving method is used to prevent a DC current of several tens of micro amperes from flowing into the read transistor of a differential paired eFuse OTP cell. Thus, reliability is secured by preventing non-blown eFuse links from being blown by the EM (electro-migration). Furthermore, a compared output between a programmed datum and a read-out datum is outputted to the PFb (pass fail bar) pin while performing a sensing margin test with a variable pull-up load in consideration of resistance variation of a programmed eFuse in the program-verify-read mode. The layout size of the 8-bit eFuse OTP IP with a $0.18{\mu}m$ process is $189.625{\mu}m{\times}138.850{\mu}m(=0.0263mm^2)$.