The Journal of Korea Institute of Information, Electronics, and Communication Technology (한국정보전자통신기술학회논문지)

Korea Information Electronic Communication Technology (한국정보전자통신기술학회)
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Deign of Small-Area Dual-Port eFuse OTP Memory IP for Power ICs

PMIC용 저면적 Dual Port eFuse OTP 메모리 IP 설계

  • Received : 2015.08.21
  • Accepted : 2015.08.11
  • Published : 2015.08.30
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Abstract

In this paper, dual-port eFuse OTP (one-time programmable) memory cells with smaller cell sizes are used, a single VREF (reference voltage) is used in the designed eFuse OTP IP (intellectual property), and a BL (bit-line) sensing circuit using a S/A (sense amplifier) based D F/F is proposed. With this proposed sensing technique, the read current can be reduced to 3.887mA from 6.399mA. In addition, the sensing resistances of a programmed eFuse cell in the program-verify-read and read mode are also reduced to $9k{\Omega}$ and $5k{\Omega}$ due to the analog sensing. The layout size of the designed 32-bit eFuse OTP memory is $187.845{\mu}m{\times}113.180{\mu}m$ ($=0.0213{\mu}m2$), which is confirmed to be a small-area implementation.

본 논문에서는 cell 사이즈가 작은 dual port eFuse OTP(One-Time Programmable)를 사용하면서 VREF(Reference Voltage) 회로를 eFuse OTP IP(Intellectual Property)에 하나만 사용하고 S/A(Sense Amplifier) 기반의 D F/F을 사용하는 BL(Bit-Line) 센싱 회로를 제안하였다. 제안된 센싱 기술은 read current를 6.399mA에서 3.887mA로 줄일 수 있다. 그리고 아날로그 센싱을 하므로 program-verify-read 모드와 read 모드에서 프로그램된 eFuse의 센싱 저항은 각각 $9k{\Omega}$, $5k{\Omega}$으로 낮출 수 있다. 그리고 설계된 32비트 eFuse OTP 메모리의 레이아웃 면적은 $187.845{\mu}m{\times}113.180{\mu}m$ ($=0.0213mm^2$)으로 저면적 구현이 가능한 것을 확인하였다.

Keywords

References

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