• 펄프종이기술
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• 제29권4호
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• pp.45-52
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• 1997

This study was carried out to investigate the adsorption characteristics of cationic starches onto BKP, BCTMP and talc. Concentration of the unadsorbed cationic starch contained in the supernatant of the pulp or talc slurries was determined using a spectoscopy method and the adsorption isotherm of cationc starch was constructed. When the equilibrium concentration of the cationic starch was low, almost complete adsorption of the starch onto BKP and BCTMP was observed. This indicates that electrostatic attraction is the main driving force for the adsorption of cationc starches onto pulps. BCTMP adsorbed greater amount of cationic starches than BKP since it contained more anionc functional groups on its surface. The adsorption amount of the cationic starch increased as the cationicity of the starches decreased. Surface charge density of the pulp and starch adsorption increased as the pH of the pulp slurry increased. Adsorption amount of the cationic starch onto talc was lower than that onto the pulp due to its low charge density and hydrophobic surface property.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1243-1245
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• 1994

SiN films were deposited in $Si_2H_6$(99.9%), $NH_3$(99.99%) gas mixture with carrier gas $N_2$ on Si substrate by ArF Excimer Laser CVD. SiN film deposition conditions that are substrate temperature and Laser average power were varied in order to investigate the dependence of SiN film on the condition. A post-deposition anneal was performed to examine variation of fixed charge density in the films. The deposition rate was increased as the substrate temperature and Laser power were increased during film deposition. The refractive index was increased with increasing substrate temperature, but it didn't have the dependence on Laser power. The fixed charge density was decreased when a post-deposition anneal was performed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.71-72
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• 2006

플라스틱 기판 위에 유도 결합 플라즈마 화학적 기상 증착장치 (Inductively Coupled Plasma Chemicai Vapor Deposition, ICP-CVD) 를 사용하여 실리콘 산화막 ($SiO_2$)을 증착하고, 엑시머레이저 어널링 (Excimer Laser Annealing, ELA) 과 $N_{2}O$ 플라즈마 전처리를 통해, 전기용량-전압(Capacitance-Voltage, C-V) 특성과 항복 전압장 (Breakdown Voltage Field) 과 같은 전기적 특성을 개선시켰다. 에너지 밀도 $250\;mJ/cm^2$ 의 엑시머 레이저 어닐링은 실리콘 산화막의 평탄 전압 (Flat Band Voltage) 을 0V에 가까이 이동시키고, 유효 산화 전하밀도 (Effective Oxide Charge Density)를 크게 감소시킨다. $N_{2}O$ 플라즈마 전처리를 통해 항복 전압장은 6MV/cm 에서 9 MV/cm 으로 향상된다. 엑시머 레이저 어닐링과 $N_{2}O$ 플라즈마 전처리를 통해 평탄 전압은 -9V 에서 -1.8V 로 향상되고, 유효 전하 밀도 (Effective Charge Density) 는 $400^{\circ}C$에서 TEOS 실리콘 산화막을 증착하는 경우의 유효 전하 밀도 수준까지 감소한다.

• 전자공학회논문지A
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• 제29A권7호
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• pp.64-72
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• 1992

VLSI 전송선로의 커패시턴스를 3차원으로 계산하였다. Green's function과 표면전하밀도의 곱의 형태로 주어지는 적분식을 풀어서 커패시턴스를 구하였다. 이때, 표면전하밀도는 도체의 표면을 균일한 면적을 갖는 미소 면적소로 나누어 주었을 때 각각의 면적소 내에서는 일정한 상수값을 갖는다고 가정하였다. 지금까지의 Green's function을 이용한 적분방법에서는 적분식의 계산을 Fourier 적분의 형태로 변환하여 계산하였기 때문에 계산과정에서 어느정도의 오차가 있을 수 밖에 없었지만, 본 논문에서는 Fourier 적분을 사용하는 대신에 이중 적분을 직접적으로 적분할 수 있는 방법을 제시하였다. 이 방법을 사용하여 적용한 결과를 기존의 결과들과 비교를 함으로써, 이의 정확성을 입증하였다.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.17-24
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• 2004

Density-gradient 방법을 이용하여 게이트의 양자효과가 double-gate MOSFET의 단채널 효과에 미치는 영향을 2차원으로 분석하였다. 게이트와 sidewall 산화막 경계면에서 발생하는 2차원 양자공핍 현상에 의하여 게이트 코너에 큰 전하 다이폴이 형성되며 subthreshold 영역에서 다이폴의 크기가 증가하고 classical 결과에 비하여 전자 농도와 전압 분포가 매우 다름을 알 수 있었다. Evanescent-nude분석을 통하여 게이트의 양자효과가 소자의 단채널 효과를 증가시키며 이는 기판에서의 양자효과에 의한 영향보다 크다는 것을 확인하였다. 양자효과에 의하여 게이트 코너에 형성되는 전하 다이폴이 단채널 효과를 증가시키는 원인임을 밝혔다.

• 반도체디스플레이기술학회지
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• 제18권2호
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• 한국전산구조공학회논문집
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• 제32권3호
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• pp.199-203
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• 2019

속도 4km/s 이상인 초고속 제트의 관통 깊이는 제트와 표적의 밀도 비를 통해 기술된다. 반면에 동일한 밀도인 경우 표적들 사이의 강도 차이는 관통 깊이 차이에 영향을 주지 않는다. 본 연구는 초고속 제트의 "강도 무관성"에 관한 연구를 다룬다. 이를 위해 초고속 성형작약탄두 제트(SCJ)에 의해 발생된 크레이터 압력의 변화를 유한요소해석을 통해 계산하고, 철강소재의 polymorphic 상변이 발현 가능성을 조사하였다. 결과적으로 초고속 제트는 표적 크레이터에 polymorphic 상변이를 일으킬 수 있고, 이로 인한 표적의 파괴 인성 저하가 강도 무관성의 원인으로 예측된다.

• Composites Research
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• 제31권6호
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• pp.365-370
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• 2018

One of the critical parameters to improve the output power for triboelectric nanogenerators (TENGs) is the surface charge density. In this work, we modify the tribo-material of TENG by introducing the $TiO_x$ embedded Polydimethylsiloxane (PDMS) in anatase and rutile phase. The effect of dielectric constant and electronic structure of the $TiO_x$ on the capacitance of TENG and the output power as well are discussed. The surface charge density is increased as the control of the dielectric constant in difference weight percent of $TiO_x$ and PDMS. As the results of that, the 5% $TiO_x$ rutile phase and 7% $TiO_x$ anatase phase embedded PDMS exhibit the highest TENG output. The peak value of voltage/current obtained from $TiO_x$ rutile and anatase phase are ${\sim}180V/8.2{\mu}A$ and $211.6V/8.7{\mu}A$, respectively, at the external force of 5 N and working frequency of 5 Hz, which gives over 12-fold and 15-fold power enhancement compared with the TENG based on the pristine PDMS film. This study provides a better understanding for TENG performance enhancement from the materials view.

• Journal of the Korean Physical Society
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• 제73권12호
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• pp.1879-1883
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• 2018

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

• 한국재료학회지
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• 제31권2호
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• pp.84-91
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• 2021

To cope with automobile exhaust gas regulations, ISG and charging control systems are applied to HEV vehicles for the purpose of improving fuel economy. These systems require quick charge-discharge performance of high current. Therefore, a Module of the AGM battery with high energy density and EDLC(Electric Double Layer Capacitor) with high power density are constructed to study the charging and discharging behavior. In CCA, which evaluates the starting performance at -18 ℃ & 30 ℃ with high current, EDLC contributed for about 8 sec at the beginning. At 0 ℃ CA (Charge Acceptance), the initial Charging current of the AGM/EDLC Module, is twice that of the AGM lead acid battery. To play the role of EDLC during high-current rapid charging and discharging, the condition of the AGM lead-acid battery is optimally maintained. As a result of a Standard of Battery Association of Japan (SBA) S0101 test, the service life of the Module of the AGM Lead Acid Battery/EDLC is found to improve by 2 times compared to that of the AGM Lead Acid Battery.