Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Effect of Characteristics of Laser CVD SiN Films on Reaction Gas and Post-treatment

Laser CVD SiN막에 대한 원료가스와 형성 후처리효과

  • Yang, J.W. (Dept. of Electrical Engineering, Korea University) ;
  • Hong, S.H. (Dept. of Electrical Engineering, Korea University) ;
  • Ryoo, J.H. (Dept. of Electrical Engineering, Korea University) ;
  • Chu, K.S. (Dept. of Electrical Engineering, Korea University) ;
  • Kim, S.Y. (Dept. of Electrical Engineering, Korea University) ;
  • Sung, Y.K. (Dept. of Electrical Engineering, Korea University)
  • 양지운 (고려대학교 전기공학과) ;
  • 홍성훈 (고려대학교 전기공학과) ;
  • 류지호 (고려대학교 전기공학과) ;
  • 추교섭 (고려대학교 전기공학과) ;
  • 김상영 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1994.07.21
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Abstract

SiN films were deposited in $Si_2H_6$(99.9%), $NH_3$(99.99%) gas mixture with carrier gas $N_2$ on Si substrate by ArF Excimer Laser CVD. SiN film deposition conditions that are substrate temperature and Laser average power were varied in order to investigate the dependence of SiN film on the condition. A post-deposition anneal was performed to examine variation of fixed charge density in the films. The deposition rate was increased as the substrate temperature and Laser power were increased during film deposition. The refractive index was increased with increasing substrate temperature, but it didn't have the dependence on Laser power. The fixed charge density was decreased when a post-deposition anneal was performed.

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