Journal of the Korean Physical Society

Korean Physical Society (한국물리학회)
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Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress

  • Jeong, Seonghoon (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University) ;
  • Kim, Hyunsoo (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University) ;
  • Lee, Sung-Nam (Department of Nano-Optical Engineering, Korea Polytechnic University)
  • Received : 2018.06.28
  • Accepted : 2018.08.28
  • Published : 2018.12.30
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Abstract

We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of $2.41{\times}10^{16}$ and the other with a density of $3.91{\times}10^{16}cm^{-3}$. However, after maximum electrical stress, three sets of deep-level states, with respective densities of $1.82{\times}10^{16}$, $2.32{\times}10^{16}cm^{-3}$, $5.31{\times}10^{16}cm^{-3}$ were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.

Keywords

Acknowledgement

Supported by : National Research Foundation of Korea (NRF), Ministry of Trade, Industry & Energy(MOTIE), Chonbuk National University

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