• Journal of the Korean Society for Geothermal and Hydrothermal Energy
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• v.14 no.2
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• pp.15-22
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• 2018

As heat pump application has been extending to residential, commercial, and industrial fields, the heat pump should have many operation modes. It is required to optimize refrigerant charge amount at all operation modes in order to enhance the annual performance of heat pumps. In this study, the performance analysis of the heat pump which has cooling, heating, cooling-hot water, heating-hot water, and hot water modes was executed with the variation of refrigerant charge amount. As the refrigerant charge amount changed, the maximum COPs of the heat pump at different operation modes were changed within ${\pm}10%$. Therefore, it is highly recommended to select optimum charge amount for the heat pump based on the analysis of annual load for each operation modes.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.776-780
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• 2007

In this paper, the charge pump circuit of a VPP generator for a low voltage DRAM is newly proposed. The proposed charge pump is a 2-stage cross coupled charge pump circuit. The charge transfer efficiency is improved, and Distributed Clock Inverter is located in each charge pump stage to reduce clock period so that the pumping current is increased. In addition, the precharge circuit is located at Gate node of charge transfer transistor to solve the problem which is that the Gate node is maintained high voltage because the boosted charge can't discharge, so device reliability is decreased. The simulation result is that pumping current, pumping efficiency and power efficiency is improved. The layout of the proposed VPP generator is designed using $0.18{\mu}m$ Triple-Well process.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.4
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• pp.419-427
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• 2016

In this paper, a 64b small-area MTP memory IP is designed. A VPPL (=VPP/3) regulator and a VNN (=VNN/3) charge pump are removed since the inhibit voltages of an MTP memory cell are all 0V instead of the conventional voltages of VPP/3 and VNN/3. Also, a VPP charge pump is removed since the VPP program voltage is supplied from an external pad. Furthermore, a VNN charge pump is designed to provide its voltage of -VPP as a one-stage negative charge pump using the VPP voltage. The layout size of the designed 64b MTP memory IP with MagnaChip's $0.18{\mu}m$ BCD process is $377.585{\mu}m{\times}328.265{\mu}m$ (=0.124mm2). Its DC-DC converter related layout size is 76.4 percent smaller than its conventional counterpart.

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.114-119
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• 2008

Wide dynamic range active pixel sensor(APS) using a charge pump circuit has been designed by using 2-poly 4-metal $0.35{\mu}M$ standard CMOS technology. The structure of the proposed APS is similar to the structure of the conventional 3-Tr APS. The proposed unit pixel consists of one photodiode and three MOSFETs. Using a charge pump circuit, the dynamic range of the proposed APS is increased, compared to the conventional 3-Tr APS.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.1
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• pp.118-122
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• 2011

For programming such as writing or erasing of the flash memory, two different kinds of high voltage are required, and the charge pump circuit has been used for this. The charge pump circuit proposed in this paper uses the VCO to adjust the clock frequency in order to match the reference voltage approved from the outside and the charge pump's output. Accordingly, I suggest a circuit that can produce a predictable output, regardless of not only an error by fabrication but also MOSFET's body effect generated in each part of the charge pump.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.319-324
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• 2012

This paper introduces a 2-dimensional touch screen panel driver based on an improved capacitive sensing circuit. The improved capacitive sensing circuit based on charge pump can eliminate the remaining charges of the intermediate nodes, which may cause output voltage drift. The touch screen panel driver with mixed-mode circuits was built and simulated using Cadence Spectre. Verilog-A models the digital circuits effectively and enables them to interface with analog circuits easily. From the simulation results, we can verify the reliable operations of the simple structured touch screen panel driver based on the improved capacitive sensing circuit offering no voltage drift.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.538-541
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• 2007

An expansion device plays an important role in optimizing the heat pumps by controlling refrigerant flow and balancing the system pressures. Conventional expansion devices are being gradually replaced with electronic expansion valves due to increasing focus on comfort, energy conservation, and application of a variable speed compressor. In addition, the amount of refrigerant charge in a heat pump is another primary parameter influencing system performance. In this study, the flow characteristics of the expansion devices are analyzed, and the effects of refrigerant charge amount on the performance of the heat pump are investigated at various operating conditions. Cooling capacity of the heat pump system is strongly dependent on load conditions. The heat pump system is very sensitive with a variation of refrigerant charge amount. But, the performance of it can be optimized by adjusting the flow rate through expansion device to maintain a constant superheat at all test conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.257-263
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• 2006

New charge pump circuits with low area and high power efficiency are proposed and verified in this paper. These pump circuits do not suffer the voltage stress higher than $V_{DD}$ across their pumping capacitors. Thus they can use the thin-oxide MOSFETs as the pumping capacitors. Using the thin-oxide capacitors can reduce the area of charge pumps greatly while keeping their driving capability. Comparing the new pump (NCP-2) with the conventional pump circuit using the thick-oxide capacitors shows that the power efficiency of NCP-2 is the same with the conventional one but the area efficiency of NCP-2 is improved as much as 71.8% over the conventional one, when the $V_{PP}/V_{DD}$ ratio is 3.5 and $V_{DD}$=1.8V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.283-287
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• 2002

To remedy both the degradation and saturation of the output voltages in the modified Dickson pump. a new multi-stage charge pump circuit is presented in this paper. Here using PMOS charge-transfer switches instead of NMOS ones eliminates the necessity of diode-configured output stage in the modified-Dickson pump, achieving the improved voltage pumping gain and its output voltages proportional to the stage numbers. Measurement indicates that VOUT/3VDD of this new pump circuit with two stages reaches to a value as high as 0.94 even with low VDD=1.0 V, strongly addressing that this scheme is very favorable at low-voltage memory applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.12
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• pp.80-86
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• 2009

In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. The performance comparison by simulations and measurements demonstrates that the proposed charge pump exhibits the higher output voltage, the larger output current and a better power efficiency over the traditional twin-well charge pumps.