[KSCI] Korea Science Citation Index Service

Charge Pump Circuits with Low Area and High Power Efficiency for Memory Applications

Kang, Kyeong-Pil (School of Electrical Engineering, Kookmin University)
Min, Kyeong-Sik (School of Electrical Engineering, Kookmin University)

Publication Information

JSTS:Journal of Semiconductor Technology and Science / v.6, no.4, 2006 , pp. 257-263 More about this Journal

Abstract

New charge pump circuits with low area and high power efficiency are proposed and verified in this paper. These pump circuits do not suffer the voltage stress higher than $V_{DD}$ across their pumping capacitors. Thus they can use the thin-oxide MOSFETs as the pumping capacitors. Using the thin-oxide capacitors can reduce the area of charge pumps greatly while keeping their driving capability. Comparing the new pump (NCP-2) with the conventional pump circuit using the thick-oxide capacitors shows that the power efficiency of NCP-2 is the same with the conventional one but the area efficiency of NCP-2 is improved as much as 71.8% over the conventional one, when the $V_{PP}/V_{DD}$ ratio is 3.5 and $V_{DD}$ =1.8V.

Keywords

charge pump; power efficiency; area efficiency; memory; DRAM;

Citations & Related Records

Reference

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