• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.177-184
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• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.5
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• pp.632-639
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• 2000

Conjugate heat transfer from a heat generating module ($31{\times}31{\times}7mm^3$) bonded through the module support on the floor of a parallel-plate channel(20mm high, 400mm wide, and 800mm long) to mixed convective air flow(0.2${\sim}$0.9m/s) is studied experimentally. The input power to the module is changed in a range 1.0${\sim}$4.5W, the floor thickness 0.2${\sim}$5mm, and the thermal resistance of module support, Rc:=0.06, 1.03 and 82.0K/W. Thermal conductance(Uc) of the board and convective thermal conductance($U_A$) from the module were derived, and the effect of V; Rc and t on Uc was investigated. It is found that the conjugate conductance (Uc) and the conductive heat transfer ratio ($Q_B$/Q) depend on the thermal resistance of the module support, the air velocity and the board thickness. The change of the module support resistance and the board thickness helps to elucidate the relative significance of heat transfer paths through the module support, the board, and from the board surface to the air. Additional information is investigated about the dependence of the heat transfer rate on the mixed convection parameter.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.7
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• pp.112-117
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• 2003

The brazing of copper alloys and duplex stainless steels is an indispensable manufacturing technology for thrust chambers with regenerative cooling. For setting up the optimized brazing conditions, C18200 copper alloy plate with machined cooling channels and S31803 stainless steel plate are brazed with AMS4764 filler metals of which thickness is 50${\mu}m$ and 80${\mu}m$ They are tested by X-ray radiography, strength/leakage and fracture tests, and fracture surface inspection. The results obtained by the suggested conditions are that the specimen brazed with filler metal thickness of 50${\mu}m$ has good strength properties and brazed zone. However, the specimen with filler metal thickness of 80${\mu}m$ has the brazed zone with cooling channel obstruction and enlargement.

• Journal of Mechanical Science and Technology
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• v.16 no.7
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• pp.927-934
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• 2002

The HANARO ( High-flux Advanced Neutron Application Reactor) has been operated since 1995. The Cold Neutron (CN) hole was implanted in the reflector tank from the design stage. Before a vacuum chamber and a moderator cell for the cold neutron source are installed into the CN hole, it is necessary to measure exactly the size of the inside diameter and thickness of the CN hole to prevent the interference problem. Due to inaccessibility and high radiation field in the CN hole, a mechanical measurement method is not permitted. The immersed ultrasonic technique is considered as the best way to measure the thickness and the diameter of the CN hole. The 4-Axis manipulator was designed and fabricated for locating the ultrasonic sensors. The transducer of an ultrasonic sensor having 10 MHz frequency leads to high resolution as much as 0.03mm. The inside diameter and thickness of 550 points of the CN hole were measured using 2 channel ultrasonic sensors. The results show that the thickness and inside diameter of the CN hole is in the range of 3.3∼6.7mm and 156∼ 165mm, respectively. This data will be a good reference for the design of the cold neutron source facility.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.30-35
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• 2020

A microlens has been fabricated by various methods such as a thermal reflow, hot embossing, diamond milling, etc. However, these methods require a relatively complex process to control the microlens shape. In this work, we report on a simple and cost-effective method to fabricate a cylindrical microlens (CML), which can diffuse light widely. We have employed a slot-die head with the dual plate (a meniscus guide with a protruded μ-tip and a shim with a slit channel) for coating of a narrow stripe using poly(methyl methacrylate) (PMMA). We have shown that the higher the coating gap, the lower the maximum coating speed, which causes an increase in the stripe width and thickness. The coated PMMA stripe has the concave shape. To make it in the shape of a convex microlens, we have applied the thermal reflow method. When the stripe thickness is small, however, its effect is negligible. To increase the stripe thickness, we have increased the number of repeated coating. With this scheme, we have fabricated the CML with the width of 223 ㎛ and the thickness of 7.3 ㎛. Finally, we have demonstrated experimentally that the CML can diffuse light widely, a feature demanded for light extraction efficiency of organic light-emitting diodes (OLEDs) and suppression of moiré patterns in displays.

• Journal of the Optical Society of Korea
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• v.12 no.2
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• pp.112-117
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• 2008

Single-mode propagation conditions of X-ray waveguides are investigated by numerical calculations in order to understand the importance of waveguide design parameters, such as core thickness and the optical constants of waveguide materials, on the transmission and coherence properties of the waveguide. The simulation code for mode analyzing is developed based on a numerical solution of the parabolic wave equation. The initial boundary value problem is solved numerically using a finite-difference scheme based on the Crank-Nicolson scheme. The E-field intensities in a core layer are calculated at an X-ray energy of 8.0 keV for air and beryllium(Be) core waveguides with different cladding layers such as Pt, Au, W, Ni and Si to determine the dependence on waveguide materials. The highest E-field intensity radiated at the exit of the waveguide is obtained from the Pt cladded beryllium core with a thickness of 20 nm. However, the intensity from the air core waveguide with Pt cladding reaches 64% of the Be-Pt waveguide. The dependence on the core thickness, which is the major parameter used to generate a single mode in the waveguide, is investigated for the air-Pt, and Be-Pt waveguides at an X-ray energy of 8.0 keV. The mode profiles at the exit are shown for the single mode at a thickness of up to 20 nm for the air-Pt and the Be-Pt waveguides.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.117-124
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• 2018

Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.793-798
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• 2012

In this paper, dependence of subthreshold current has been analyzed for doping distribution and channel structure of double gate(DG) MOSFET. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. Since DGMOSFETs have reduced short channel effects with improvement of current controllability by gate voltages, subthreshold characteristics have been enhanced. The control of current in subthreshold region is very important factor related with power consumption for ultra large scaled integration. The deviation of threshold voltage has been qualitatively analyzed using the changes of subthreshold current for gate voltages. Subthreshold current has been influenced by doping distribution and channel dimension. In this study, the influence of channel length and thickness on current has been analyzed according to intensity and distribution of doping.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.672-677
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• 2013

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.