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http://dx.doi.org/10.6109/jkiice.2018.22.1.117

Characterization of gate oxide breakdown in junctionless amorphous InGaZnO thin film transistors  

Chang, Yoo Jin (Department of Electronic Engineering, Incheon National University)
Seo, Jin Hyung (Department of Electronic Engineering, Incheon National University)
Park, Jong Tae (Department of Electronic Engineering, Incheon National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.22, no.1, 2018 , pp. 117-124 More about this Journal
Abstract
Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.
Keywords
InGaZnO thin film transistor; Junctionless transistor; Gate oxide breakdown voltage; Thin film thickness;
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Times Cited By KSCI : 1  (Citation Analysis)
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