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http://dx.doi.org/10.6109/jkiice.2012.16.4.793

Dependence of Subthreshold Current for Channel Structure and Doping Distribution of Double Gate MOSFET  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.4, 2012 , pp. 793-798 More about this Journal
Abstract
In this paper, dependence of subthreshold current has been analyzed for doping distribution and channel structure of double gate(DG) MOSFET. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. Since DGMOSFETs have reduced short channel effects with improvement of current controllability by gate voltages, subthreshold characteristics have been enhanced. The control of current in subthreshold region is very important factor related with power consumption for ultra large scaled integration. The deviation of threshold voltage has been qualitatively analyzed using the changes of subthreshold current for gate voltages. Subthreshold current has been influenced by doping distribution and channel dimension. In this study, the influence of channel length and thickness on current has been analyzed according to intensity and distribution of doping.
Keywords
DGMOSFET; doping distribution; Poisson equation; subthreshold current; short channel effect;
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Times Cited By KSCI : 1  (Citation Analysis)
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