• 전자공학회논문지A
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• 제33A권3호
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• pp.135-139
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• 1996

It is difficult to fabricate precise resistors for the analog integrated circuits using MOS technology. Until now polysilicon resistors were used at the analog integrated circuits, but some deviations of resistance and sensitive variation processes still cause their misactions. In order to improve these misactions, we suggest a CMOS resistor cell which provides precise resistance and excellant linearity. Also we designed the second order active low pass filter using the CMOS resistor cells and verified their superior performances compared to the actual resistors.

• Journal of information and communication convergence engineering
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• 제14권4호
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• pp.268-271
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• 2016

An efficient inductive switching noise suppression technique for mixed-signal integrated circuits (ICs) using standard CMOS digital technology is proposed. The proposed design technique uses a parallel RC circuit, which provides a damping path for the switching noise. The proposed design technique is used for designing a mixed-signal circuit composed of a ring oscillator, a digital output buffer, and an analog noise sensor node for $0.13-{\mu}m$ CMOS digital IC technology. Simulation results show a 47% reduction in the on-chip inductive switching noise coupling from the noisy digital to the analog blocks in the same substrate without an additional propagation delay. The increased power consumption due to the damping resistor is only 67% of that of the conventional source damping technique. This design can be widely used for any kind of analog and high frequency digital mixed-signal circuits in CMOS technology

• Journal of Semiconductor Engineering
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• 제1권2호
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• pp.64-73
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• 2020

As CMOS technology scales down, the design of analog signal processing circuit becomes far more difficult because of steadily decreasing supply voltage and smaller intrinsic gain of transistors. With sub-1V supply voltage, the conventional analog signal processing relying on high-gain amplifiers is not an effective solution and different approach has to be sought. One of the promising approaches is "time-domain analog signal processing" which exploits the improving switching speed of transistors in a scaled CMOS technology. In this paper, various time-domain analog signal processing techniques are explained with some experimental results.

• 전자공학회논문지A
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• 제33A권4호
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• 한국정보통신학회논문지
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• 제6권1호
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• pp.25-29
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• 2002

High speed 신호처리는 통신분야, SC circuit, HDTV, ISDN 등에서 관심이 더욱 승가하고 있으며, high speed 신호처리를 위한 많은 방법들이 있다. 본 논문에서는 CMOS 공정에서 고주파 Op-amp의 실현을 의한 설계를 기술하였다. 아날로그 집적회로를 기초로 하는 high speed op-amp의 기능을 제한하는 요소 중 한가지는 유효 주파수 범위이다. 본 논문에서는 $C_{L}$ =2pF에서 단위이득 주파수가 170MHz인 향상된 대역폭적을 가지는 CMOS op-amp 구조를 계발한다. 공정은 1.2$\mu$디자인 룰을 따른다. 본 논문에서 제시한 CMOS op-amp 고주파 SC filter에서 요구하는 큰 커패시터 부하에서의 넓고 안정된 대역폭을 얻기에 매우 적합하다.

• 전기학회논문지P
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• 제57권3호
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• pp.255-259
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• 2008

In this paper, a current-mode integrator for low-voltage, low-power analog integrated circuits is presented. Using the proposed current-mode integrator, the baseband analog filter is designed for WCDMA wireless communication. To verify the proposed current-mode integrator circuit, Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS parameter is performed and achieved 44.9dB gain, 15.7MHz unity gain frequency. The described 3rd-order current-mode baseband analog filter is composed of the proposed current-mode integrator, and SFG(Signal Flow Graph) method is used to realize the baseband filter. The simulated results show 2.12MHz cutoff frequency which is suitable for WCDMA baseband block.

• Journal of Semiconductor Engineering
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• 제1권3호
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• ETRI Journal
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• 제33권3호
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• pp.393-400
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• 2011

A systematic approach for the design of two-stage class AB CMOS unity-gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity-gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 ${\mu}m$ CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 ${\mu}W$).

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.960-964
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• 2003

In this paper, the CMOS integrated circuit technique for implementing current-mode maximum and minimum operations scheme is described. The maximum and minimum operations are incorporated into the same scheme with parallel processing. Using this scheme as the basic unit, an analog three-input maximum, median, and minimum circuit is designed. The performance of the proposed circuit shows a very sharp transfer characteristic and high accuracy. The proposed circuit achieves a high-speed operation, which is suitable for real-time systems. The PSPICE simulation results demonstrating the characteristic of the proposed circuit are included.

• 전기전자학회논문지
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• 제2권1호
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• pp.34-41
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• 1998

자기 띠 저장 시스템에서 데이터를 저장하고 복원할 수 있는 칩을 구현하였다. 구현된 칩은 아날로그 회로와 디지털 회로가 한 칩안에 같이 내장되어 있으며 F/2F 인코딩과 디코딩을 동시에 지원한다. 아날로그 부분은 초단 앰프, 첨두치 검출기, 비교기, 기준전압 생성회로 등으로 구현 되었으며 디지탈 회로 부분은 기준 윈도우 신호 발생부, F/2F 신호 길이를 측정하는 up/down 계수부, 비트 에러 검출부 및 기타 제어(control) 회로 등을 포함한다. 검출되는 신호특성을 파악하여 아날로그 회로부 설계를 최적화 함으로써 기존의 시스템에서 흔히 쓰이는 AGC(automatic gain control) 회로를 제거하였다. 또 일정한 비트의 길이를 초과한 파손 비트 또는 다분할로 파손된 비트 등을 감지한 경우 신속하게 기준 비트를 재 설정함으로서 데이터의 오인식을 없애주는 회로를 제안하였다. 제안된 회로는 $0.8{\mu}m$ CMOS N-well 일반 공정을 이용하여 구현 되었으며 3.3 V에서 부터 7.5 V의 공급 전압 범위에서 동작하도록 설계 되었다. 5 V의 전원 공급시 약 8 mW의 소모 전력을 보여 주고 있으며 칩 면적은 패드를 포함하여 $3.04mm^2(1.6mm{\times}1.9mm)$이다.