• Title/Summary/Keyword: CMOS Switch

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A Self-healing Space-Division Switch for a 2-Fiber Bidirectional Line Switched Ring (2-선 양방향 선로 스위칭 링을 위한 자기치유 공간분할 스위치 소자)

  • 이상훈;김성진
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.26 no.12C
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    • pp.240-248
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    • 2001
  • This paper describes the design of a space-division switch which can support a self-healing operation of 2-fiber bidirectional line switched ring in 2.5Gb/s SDH-based transmission system. The switch having a 1.25Gb/s throughput has been designed and implemented with COMPASS tool and 0.87$\mu\textrm{m}$ CMOS gate-array. The proposed switch is suitable for the quickly self-healing operations when a failure occurs in a 2-fiber bidirectional switched ring composed of ADM transmission systems. The switch is composed of an add/drop control part, a cross-point switch, a frame-phase aligner, processor interface and an unequipped data framer. The test results of the switch adapted to 2.SGb/s SDH-based transmission system, show immediate restoration when a failure occurs.

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On the detection of short faults in BiCMOS circuits using current path graph (전류 경로 그래프를 이용한 BiCMOS회로의 단락고장 검출)

  • 신재흥;임인칠
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.2
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    • pp.184-195
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    • 1996
  • Beause BiCMOS logic circuits consist of CMOS part which constructs logic function and bipolar part which drives output load, the effect of short faults on BiCMOS logic circuits represented different types from that on CMOS. This paper proposes new test method which detects short faults on BiCMOS logic circuits using current path graph. Proposed method transforms BiCMOS circuits into raph constructed by nodes and edges using extended switch-level model and separates the transformed graph into pull-up part and pull-down part. Also, proposed method eliminates edge or add new edge, according ot short faults on terminals of transistor, and can detect short faults using current path graph that generated from on- or off-relations of transistor by input patterns. Properness of proposed method is verified by comparing it with results of spice simulation.

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Performance Analysis of 800Gb/s ATM Switching MCM (800Gb/s ATM 스위칭 MCM의 성능분석)

  • Jung, Un-Suk;Kim, Hoon;Park, Kwang-Chae
    • Proceedings of the IEEK Conference
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    • 2001.06a
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    • pp.155-158
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    • 2001
  • A 640Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM, 0.25um CMOS and optical WDM interconnection is fabricated for future N-ISDN services. A 40 layer, 160mm$\times$114mm ceramic MCM realizes the basic ATM switch module with 80Gbps throughput. The basic unit ATM switch module with 80Gb/s throughput. The basic unit ATM switch MCM consists of in 8 chip advanced 0.25um CMOS VLSI and 32 chip I/O Bipolar VLSIs. The MCM employs an 40 layer, very thin layer ceramic MCM and a uniquely structured closed loop type liquid colling system is adopted to cope with the MCM's high-power dissipation of 230w. The MCM is Mounted on a 32cm$\times$50cm mother board. A three stage ATM switch is realized by optical WDM interconnection between the high-performance MCM.

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A 3 V 12b 100 MS/s CMOS DAC for High-Speed Communication System Applications (고속통신 시스템 응용을 위한 3 V 12b 100 MS/s CMOS D/A 변환기)

  • 배현희;이명진;신은석;이승훈;김영록
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.685-691
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    • 2003
  • This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.

High-Efficiency Charge Pump for CMOS Image Sensor (CMOS 이미지 센서를 위한 고효율 Charge Pump)

  • Kim, Ju-Ha;Jun, Young-Hyun;Kong, Bai-Sun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.50-57
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    • 2008
  • In this paper, a high-efficiency charge pump for use in CMOS image sensor(CIS) is proposed. The proposed charge pump pursues high pumping efficiency by minimizing the switching and reversion losses by taking advantage of operation characteristics of CIS. That is, the proposed charge pump minimizes the switching loss by dynamically controlling the size of clock driver, pumping capacitor, and charge transfer switch based on the operation phase of CIS pixel sensor. The charge pump also minimizes the reversion loss by guaranteeing a sufficient non-overlapping period of local clocks using a tri-state local clock driver adapting the schmitt trigger. Comparison results using a 0.13-um CMOS process technology indicate that the proposed charge pump achieves up to 49.1% reduction on power consumption under no loading current condition as compared to conventional charge pump. They also indicate that the charge pump provides 19.0% reduction on power consumption under the maximum loading current condition.

A 900 MHz ZigBee CMOS RF Transceiver Using Switchless Matching Network (무스위치 정합 네트워크를 이용한 900 MHz ZigBee CMOS RF 송수신기)

  • Jang, Won Il;Eo, Yun Seong;Park, Hyung Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.8
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    • pp.610-618
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    • 2017
  • This paper presents a 868/915 MHz CMOS RF transceiver for the ZigBee application. Using a switchless matching network, the off chip switch is removed to achieve the low cost RF transceiver, and by the elimination of the switch's insertion loss we can achieve the benefits for the RF receiver's noise figure and transmitter's power efficiency at the given output power. The receiver is composed of low-noise amplifier, mixer, and baseband analog(BBA) circuit. The transmitter is composed of BBA, mixer, and driver amplifier. And, the integer N type frequency synthesizer is designed. The proposed ZigBee RF full transceiver is implemented on the $0.18{\mu}m$ CMOS technology. Measurement results show that the maximum gain and the noise figure of the receiver are 97.6 dB and 6.8 dB, respectively. The receiver consumes 32 mA in the receiver mode and the transmitter 33 mA in the transmission mode.

A Study on Width of Dummy Switch for performance improvement in Current Memory (Current Memory의 성능 개선을 위한 Dummy Switch의 Width에 관한 연구)

  • Jo, Ha-Na;Hong, Sun-Yang;Jeon, Seong-Yong;Kim, Seong-Gwon
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2007.04a
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    • pp.485-488
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    • 2007
  • 최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.

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A Path Control Switch in SDH-based Transmission System (SDH 전송시스템에서의 경로제어스위치)

  • Lee, Sang-Hoon;Koh, Jung-Hyuk;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1998.11b
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    • pp.594-596
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    • 1998
  • In this paper, a path control switch has been developed for self-healing operation in SDH-based transmission system. The proposed switch is suitable for self-healing operations in both an Unidirectional Path Switched Ring and a 2-fiber Bidirectional Line Switched Ring. The path control switch is implemented with $0.8{\mu}m$ CMOS LSI chip. The self-healing operation of the switch is effectively done by the configuration information stored in the registers of the switch. The switch has an AU-3(51.84Mb/s) TSI(Time Slot Interchange) and has 1.25Gb/s throughput. But the higher throughput can be realized by combining two identical switches or more with the parallel architecture.

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A multistandard CMOS mixer using switched inductor (스위칭 인덕터를 이용한 다중 표준용 CMOS 주파수 변환기)

  • Yoo, Sang-Sun;Yoo, Hyung-Joun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.3 s.357
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    • pp.78-84
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    • 2007
  • A multistandard direct-conversion mixer for WCDMA, Wibro, and 802.11a/b/g is designed in 0.18 um CMOS technology To support multistandard and to reduce the chip area the switched inductor is used as the matching method. This switched inductor matching network selects the mixer's operation frequency band by turning on or off the switch transistor. Since the performances of mixer and operation frequency can be affected by the parasitic of switch transistor the mixer should be designed with the optimized size of switch to minimize parasitic effects. Proposed mixer is able to achieve return loss less than -13 dB in $2.1\sim2.5GHz$ and $5.1\sim5.9GHz$ bands with the suitable performance to meet requirements of WCDMA, WiBro, and 802.11a/b/g.

A 1.8V 50-MS/s 10-bit 0.18-um CMOS Pipelined ADC without SHA

  • Uh, Ji-Hun;Kim, Won-Myung;Kim, Sang-Hun;Jang, Young-Chan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.143-146
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    • 2011
  • A 50-MS/s 10-bit pipelined ADC with 1.2Vpp differential input range is proposed in this paper. The designed pipelined ADC consists of eight stage of 1.5bit/stage, one stage of 2bit/stage, digital error correction block, bias & reference driver, and clock generator. 1.5bit/stage is consists of sub-ADC, DAC and gain stage, Specially, a sample-and hold amplifier (SHA) is removed in the designed pipelined ADC to reduce the hardware and power consumption. Also, the proposed bootstrapped switch improves the Linearity of the input analog switch and the dynamic performance of the total ADC. The reference voltage was driven by using the on-chip reference driver without external reference. The proposed pipelined ADC was designed by using a 0.18um 1-poly 5-metal CMOS process with 1.8V supply. The total area including the power decoupling capacitor and power consumption are $0.95mm^2$ and 60mW, respectively. Also, the simulation result shows the ENOB of 9.3-bit at the Nyquist sampling rate.

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