Performance Analysis of 800Gb/s ATM Switching MCM

800Gb/s ATM 스위칭 MCM의 성능분석

  • Jung, Un-Suk (Dept. of Electronics Eng., Graduate School of Chosun Univ.) ;
  • Kim, Hoon (Dept. of Electronics Eng., Graduate School of Chosun Univ.) ;
  • Park, Kwang-Chae (School of Electronics, Information and Communication Eng., Chosun Univ.)
  • 정운석 (조선대학교 일반대학원 전자공학과) ;
  • 김훈 (조선대학교 일반대학원 전자공학과) ;
  • 박광채 (조선대학교 전자정보통신공학부)
  • Published : 2001.06.01

Abstract

A 640Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM, 0.25um CMOS and optical WDM interconnection is fabricated for future N-ISDN services. A 40 layer, 160mm$\times$114mm ceramic MCM realizes the basic ATM switch module with 80Gbps throughput. The basic unit ATM switch module with 80Gb/s throughput. The basic unit ATM switch MCM consists of in 8 chip advanced 0.25um CMOS VLSI and 32 chip I/O Bipolar VLSIs. The MCM employs an 40 layer, very thin layer ceramic MCM and a uniquely structured closed loop type liquid colling system is adopted to cope with the MCM's high-power dissipation of 230w. The MCM is Mounted on a 32cm$\times$50cm mother board. A three stage ATM switch is realized by optical WDM interconnection between the high-performance MCM.

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