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High-Efficiency Charge Pump for CMOS Image Sensor  

Kim, Ju-Ha (Department of Electronics and Electrical Engineering, Sungkyunkwan University)
Jun, Young-Hyun (Semiconductor Division, Samsung Electronics)
Kong, Bai-Sun (Department of Electronics and Electrical Engineering, Sungkyunkwan University)
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Abstract
In this paper, a high-efficiency charge pump for use in CMOS image sensor(CIS) is proposed. The proposed charge pump pursues high pumping efficiency by minimizing the switching and reversion losses by taking advantage of operation characteristics of CIS. That is, the proposed charge pump minimizes the switching loss by dynamically controlling the size of clock driver, pumping capacitor, and charge transfer switch based on the operation phase of CIS pixel sensor. The charge pump also minimizes the reversion loss by guaranteeing a sufficient non-overlapping period of local clocks using a tri-state local clock driver adapting the schmitt trigger. Comparison results using a 0.13-um CMOS process technology indicate that the proposed charge pump achieves up to 49.1% reduction on power consumption under no loading current condition as compared to conventional charge pump. They also indicate that the charge pump provides 19.0% reduction on power consumption under the maximum loading current condition.
Keywords
CMOS image sensor; charge pump; voltage doubler; power efficiency;
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