• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.37-42
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• 2010

A novel hysteresis tunable monolithic comparator circuit based on a $0.35{\mu}m$ CMOS process is suggested, designed, fabricated, measured and analyzed in this paper. To tune the threshold voltage of the hysteresis in the comparator circuit, two external digital bits are used with supply voltage of 3.3V.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.6 s.312
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• pp.48-60
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• 2006

This paper presents three PWM modulators using CMOS OTAs. They consist of a ramp integrator and current-tunable Schmitt triggers. Prototype circuits built using discrete components exhibited that their duty cycles are linearly controllable. The proposed modulators can be easily fabricated in a monolithic IC, because they have a simple structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.6
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• pp.597-602
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• 2008

This paper examines the damage effect and delay time of CMOS integrated circuits device with coupling caused by high power microwaves. The waveguide and magnetron was employed to study the influence of high power micro-waves on CMOS inverters. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave is observed with supply current and delay time. When the power supply current was increased 2.14 times for normal current at 9.9 kV/m, the CMOS inverter was broken by latch-up. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, CMOS inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.309-312
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• 2005

The RFID tag IC has been presently abstracting great attention in the world because it can be one of the important sensor elements in the ubiquitous sense network in the future. The 125 kHz and 13.56 MHz RFID tag IC's have already been developed and now widely used in the world and the UHF band tag IC is under development. Domestically, the development of the 125 kHz tag IC was reported before, but there has been no report about the development of the 13.56 MHz tag IC up to now. In this paper, the results of the design, fabrication and measurement of a 13.56 MHz tag IC are discussed. The digital and the analog circuits for the chip were designed and the chip was fabricated using 0.35 ㎛ standard CMOS technology and measured with a separately prepared reader. It was found from the measurement results that it operated properly within 8 cm range of the reader.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.85-88
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• 2001

This paper suggests an improved switch architecture for the rechargeable battery protection IC. In the existing protection IC, charging and discharging switches composed of the CMOS transistor and the diode are external components. It is difficult to integrate the switches in a CMOS process due to the large chip-size overhead and inevitable parasitic effects. In this paper, we propose a new switch architecture of the MOSFET's 'diode connection' method. The performance and chip-size overhead are proved to be adequate for the fully integrated protection IC.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.103-106
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• 2005

This paper reports design and fabrication of CMOS temperature sensor circuit using MOSIS 0.25um CMOS technology. The proposed circuit has a temperature coefficient of $13mV/^{\circ}C$ for a wide operating temperature range with a good linearity. This circuit may be applicable to the design of one-chip IC where quartz crystal resonator is directly mounted on CMOS oscillator chips.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.419-425
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• 2017

This paper presents CMOS UWB RFIC based radar system for high speed target detection. The system can achieve resolution of 15 cm and detection range of 15 m. For developed system, single chip CMOS UWB IC is implemented. To reduce the measuring and processing time, envelope detection and equivalent time sampling technique are used. Measurement results show that the bandwidth and center frequency of UWB pulse can be adjusted in the range of 0.5 GHz~1.0 GHz, 3.5 GHz~4.5 GHz, respectively. Signal processing time including scan time over 15 m distance is about $150{\mu}sec$.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.58-65
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• 2015

This paper presents the design of an implantable stimulation IC intended for neural prosthetic devices using $0.18-{\mu}m$ standard CMOS technology. The proposed single-channel biphasic current stimulator prototype is designed to deliver up to 1 mA of current to the tissue-equivalent $10-k{\Omega}$ load using 12.8-V supply voltage. To utilize only low-voltage standard CMOS transistors in the design, transistor stacking with dynamic gate biasing technique is used for reliable operation at high-voltage. In addition, active charge balancing circuit is used to maintain zero net charge at the stimulation site over the complete stimulation cycle. The area of the total stimulator IC consisting of DAC, current stimulation output driver, level-shifters, digital logic, and active charge balancer is $0.13mm^2$ and is suitable to be applied for multi-channel neural prosthetic devices.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.911-914
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• 2000

본 논문에서는 배터리가 없는 ASK 전송방식의 RFID(Radio Frequency IDentification) Transponder 칩 설계에 관한 내용을 다룬다. Transponder IC는 power-generation 회로, clock-generation 회로, digital block, modulator, overoltge protection 회로로 구성된다. 설계된 칩은 저전력 회로를 적용하여 원거리 transponder칩을 구현할 수 있도록 하였다. 설계된 회로는 0.25㎛ 표준 CMOS 공정으로 레이아웃하여 제작하였다.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.9
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• pp.19-27
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• 1998

The Transmitter part of single RF transceiver chip for an extended GSM handset application was circuit-designed, fabricated adn evaluated. The RF-IC Chip was processed by 0.8${\mu}m$ Si BiCMOS, 80 pin TQFP of $10 {\times} 10mm$ size, 3.3V operated RF-IC reveals, in general, quite reasonable integrity and RF performances. This paper describes development resuts of RF transmitter section, which includes IF/RF up-conversion mixer, IF/RF polyphase and pre-amplifier. The test results show that RF transmitter section is well operated within frequency range of 880~915MHz, which is defined on the extended GSM(E-GSM) specification. The transmitter section also reveals moderate power consumption of 71mA and total output power of 8.2dBm.