• Title/Summary/Keyword: CMOS 고속회로

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A design of high speed and low power 16bit-ELM adder using variable-sized cell (가변 크기 셀을 이용한 저전력 고속 16비트 ELM 가산기 설계)

  • 류범선;조태원
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.8
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    • pp.33-41
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    • 1998
  • We have designed a high speed and low power 16bit-ELM adder with variable-sized cells uitlizing the fact that the logic depth of lower bit position is less than that of the higher bit position int he conventional ELM architecture. As a result of HSPICE simulation with 0.8.mu.m single-poly double-metal LG CMOS process parameter, out 16bit-ELM adder with variable-sized cells shows the reduction of power-delay-product, which is less than that of the conventional 16bit-ELM adder with reference-sized cells by 19.3%. We optimized the desin with various logic styles including static CMOs, pass-transistor logic and Wang's XOR/XNOR gate. Maximum delay path of an ELM adder depends on the implementation method of S cells and their logic style.

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A 200MHz high speed 16M SDRAM with negative delay circuit (부지연 회로를 내장한 200MHz 고속 16M SDRAM)

  • 김창선;장성진;김태훈;이재구;박진석;정웅식;전영현
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.4
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    • pp.16-25
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    • 1997
  • This paper shows a SDRAM opeating in 200MHz clock cycle which it use data interleave and pipelining for high speed operation. We proposed NdC (Negative DEaly circuit) to improve clock to access time(tAC) characteristics, also we proposed low power WL(wordline)driver circit and high efficiency VPP charge-pump circit. Our all circuits has been fabricated using 0.4um CMOS process, and the measured maximum speed is 200Mbytes/s in LvTTL interface.

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New phase/frequency detectors for high-speed phase-locked loop application (고속 위상 동기 루프를 위한 새로운 구조의 위상/주파수 검출기)

  • 전상오;정태식;김재석;최우영
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.8
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    • pp.52-59
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    • 1998
  • New types of PFD (phase-frequency detector) are proposed with reset time and propagation delay reduced. The perfomrance of our proposed PFDs are confirmed by SPICE simulation with 0.8.mu.m CMOS process parameter. As a result of simulation, the reset time of PFDs are 0.32 nsec and 0.030 nsec in capture-process. The proposed PFDs can be used in hihg-speed phase-licked loop (PLL).

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Design of a High Performance 32$\times$32-bit Multiplier Based on Novel Compound Mode Logic and Sign Select Booth Encoder (새로운 복합모드로직과 사인선택 Booth 인코더를 이용한 고성능 32$\times$32-bit 곱셈기의 설계)

  • Kim, Jin-Hwa;Song, Min-Gyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.3
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    • pp.205-210
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    • 2001
  • In this paper, a novel compound mode logic based on the advantage of both CMOS logic and pass-transistor logic(PTL) is proposed. From the experimental results, the power-delay products of the compound mode logic is about 22% lower than that of the conventional CMOS logic, when we design a full adder. With the proposed logic, a high performance 32$\times$32-bit multiplier has been fabricated with 0.6um CMOS technology. It is composed of an improved sign select Booth encoder, an efficient data compressor based on the compound mode logic, and a 64-bit conditional sum adder with separated carry generation block. The Proposed 32$\times$32-bit multiplier is composed of 28,732 transistors with an active area of 1.59$\times$1.68 mm2 except for the testing circuits. From the measured results, the multiplication time of the 32$\times$32-bit multiplier is 9.8㎱ at a 3.3V power supply, and it consumes about 186㎽ at 100MHz.

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An 8b 220 MS/s 0.25 um CMOS Pipeline ADC with On-Chip RC-Filter Based Voltage References (온-칩 RC 필터 기반의 기준전압을 사용하는 8b 220 MS/s 0.25 um CMOS 파이프라인 A/D 변환기)

  • 이명진;배현희;배우진;조영재;이승훈;김영록
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.10
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    • pp.69-75
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    • 2004
  • This work proposes an 8b 220 MS/s 230 mW 3-stage pipeline CMOS ADC with on-chip filers for temperature- and power- insensitive voltage references. The proposed RC low-pass filters improve switching noise performance and reduce reference settling time at heavy R & C loads without conventional off-chip large bypass capacitors. The prototype ABC fabricated in a 0.25 um CMOS occupies the active die area of 2.25 $\textrm{mm}^2$ and shows the measured DNL and INL of maximum 0.43 LSB and 0.82 LSB, respectively. The ADC maintains the SNDR of 43 dB and 41 dB up to the 110 MHz input at 200 MS/s and 220 MS/s, respectively, while the SNDR at the 500 MHz input is degraded as much as only 3 dB than the SNDR at the 110 MHz input.

A 500MSamples/s 6-Bit CMOS Folding and Interpolating AD Converter (500MSamples/s 6-비트 CMOS 폴딩-인터폴레이팅 아날로그-디지털 변환기)

  • Lee Don-Suep;Kwack Kae-Dal
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.7
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    • pp.1442-1447
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    • 2004
  • In this paper, a 6-Bit CMOS Folding and Interpolating AD Converter is presented. The converter is considered to be useful as an integrated part of a VLSI circuit handling both analog and digital signals as in the case of HDD or LAN applications. A built-in analog circuit for VLSI of a high-speed data communication requires a small chip area, low power consumption, and fast data processing. The proposed folding and interpolating AD Converter uses a very small number of comparators and interpolation resistors, which is achieved by cascading a couple of folders working in different principles. This reduced number of parts is a big advantage for a built-in AD converter design. The design is based on 0.25m double-poly 2 metal n-well CMOS process. In the simulation, with the applied 2.5V and a sampling frequency of 500MHz, the measurements are as follows: power consumption of 27mw, INL and DNL of $\pm$0.1LSB, $\pm$0.15LSB each, SNDR of 42dB with an input signal of 10MHz.

Implementation of 234.7 MHz Mixed Mode Frequency Multiplication & Distribution ASIC (234.7 MHz 혼합형 주파수 체배 분배 ASIC의 구현)

  • 권광호;채상훈;정희범
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.11A
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    • pp.929-935
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    • 2003
  • An analog/digital mixed mode ASIC for network synchronization of ATM switching system has been designed and fabricated. This ASIC generates a 234.7/46.94 ㎒ system clock and 77.76/19.44 ㎒ user clock using 46.94 ㎒ transmitted clocks from other systems. It also includes digital circuits for checking and selecting of the transmitted clocks. For effective ASIC design, full custom technique is used in 2 analog PLL circuits design, and standard cell based technique is used in digital circuit design. Resistors and capacitors for analog circuits are specially designed which can be fabricated in general CMOS technology, so the chip can be implemented in 0.8$\mu\textrm{m}$ digital CMOS technology with no expensive. Testing results show stable 234.7 ㎒ and 19.44 ㎒ clocks generation with each 4㎰ and 17㎰ of low ms jitter.

A l0b 150 MSample/s 1.8V 123 mW CMOS A/D Converter (l0b 150 MSample/s 1.8V 123 mW CMOS 파이프라인 A/D 변환기)

  • Kim Se-Won;Park Jong-Bum;Lee Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.1
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    • pp.53-60
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    • 2004
  • This work describes a l0b 150 MSample/s CMOS pipelined A/D converter (ADC) based on advanced bootsuapping techniques for higher input bandwidth than a sampling rate. The proposed ADC adopts a typical multi-step pipelined architecture, employs the merged-capacitor switching technique which improves sampling rate and resolution reducing by $50\%$ the number of unit capacitors used in the multiplying digital-to-analog converter. On-chip current and voltage references for high-speed driving capability of R & C loads and on-chip decimator circuits for high-speed testability are implemented with on-chip decoupling capacitors. The proposed AU is fabricated in a 0.18 um 1P6M CMOS technology. The measured differential and integral nonlinearities are within $-0.56{\~}+0.69$ LSB and $-1.50{\~}+0.68$ LSB, respectively. The prototype ADC shows the signal-to-noise-and-distortion ratio (SNDR) of 52 dB at 150 MSample/s. The active chip area is 2.2 mm2 (= 1.4 mm ${\times}$ 1.6 mm) and the chip consumes 123 mW at 150 MSample/s.

On a High-speed Implementation of LILI-II Stream Cipher (LILI-II 스트림 암호의 고속화 구현에 관한 연구)

  • 이훈재;문상재
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.8C
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    • pp.1210-1217
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    • 2004
  • LILI-II stream cipher is an upgraded version of the LILI-128, one of candidates in NESSIE. Since the algorithm is a clock-controlled, the speed of the keystream data is degraded structurally in a clock-synchronized hardware logic design. Accordingly, this paper proposes a 4-bit parallel LFSR, where each register bit includes four variable data routines for feedback or shifting within the LFSR. furthermore, the timing of the proposed design is simulated using a Max+plus II from the ALTERA Co., the logic circuit is implemented for an FPGA device (EPF10K20RC240-3), and apply to the Lucent ASIC device (LV160C, 0.13${\mu}{\textrm}{m}$ CMOS & 1.5v technology), and it could achieve a throughput of about 500 Mbps with a 0.13${\mu}{\textrm}{m}$ semiconductor for the maximum path delay below 1.8㎱. Finally, we propose the m-parallel implementation of LILI-II, throughput with 4, 8 or 16 Gbps (m=8, 16 or 32).

Design of Low-Power and High-Speed Receiver for a Mobile Display Digital Interface (모바일 디스플레이 디지털 인터페이스용 저전력 고속 수신기 회로의 설계)

  • Lee, Cheon-Hyo;Kim, Jeong-Hoon;Lee, Jae-Hyung;Jin, Liyan;Yin, Yong-Hu;Jang, Ji-Hye;Kang, Min-Cheol;Li, Long-Zhen;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.7
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    • pp.1379-1385
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    • 2009
  • We propose a low-power and high-speed client receiver for a mobile display digital interface (MDDI) newly in this paper. The low-power receiver is designed such that bias currents, sink and source currents, are insensitive to variations of power supply, process, temperature, and common-mode input voltage (VCM) and is able to operate at a rate of 450Mbps or above under the conditions of a power supply range of 3.0 to 3.6Vand a temperature range of -40 to 85$^{\circ}$C. And it is confirmed by a simulation result that the current dissipation is less than 500${\mu}$A. A test chip is manufactured with the Magna chip 0.35${\mu}$m CMOS process. When a test was done, the data receiver and data recovery circuits are functioning normally.