• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.53-60
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• 2005

This work proposes a 10b 100 MS/s $1.4\;mm^2$ CMOS ADC for low-power multimedia applications. The proposed two-step pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The wide-band SHA employs a gate-bootstrapping circuit to handle both single-ended and differential inputs with 1.2 Vp-p at 10b accuracy while the second-stage flash ADC employs open-loop offset sampling techniques to achieve 6b resolution. A 3-D fully symmetrical layout reduces the capacitor and device mismatch of the first-stage MDAC. The low-noise references are integrated on chip with optional off-chip voltage references. The prototype 10b ADC implemented in a 0.18 um CMOS shows the maximum measured DNL and INL of 0.59 LSB and 0.77 LSB, respectively. The ADC demonstrates the SNDR of 54 dB, the SFDR of 62 dB, and the power dissipation of 56 mW at 100 MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.26-36
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• 2006

In this paper, we propose a cost-effective color filter may (CFA) demosaicing method for digital still cameras in which a single CCD or CMOS image sensor is used. Since a CFA is adopted, we must interpolate missing color values in the red, green and blue channels at each pixel location. While most state-of-the-art algorithms invest a great deal of computational effort in the enhancement of the reconstructed image to overcome the color artifacts, we focus on eliminating the color artifacts with low computational complexity. Using spatial correlation of the adjacent pixels, the edge-directional information of the neighbor pixels is used for determining the edge direction of the current pixel. We apply our method to the state-of-the-art algorithms which use edge-directed methods to interpolate the missing color channels. The experiment results show that the proposed method enhances the demosaiced image qualify from $0.09{\sim}0.47dB$ in PSNR depending on the basis algorithm by removing most of the color artifacts. The proposed method was implemented and verified successfully using verilog HDL and FPGA. It was synthesized to gate-level circuits using 0.25um CMOS standard cell library. The total logic gate count is 12K, and five line memories are used.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.44 no.5
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• pp.103-111
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• 2007

In this paper, we propose a VLSI architecture of hardware optimized high quality image signal processor for a Single-chip CMOS Image Sensor(CIS). The Single-chip CIS is usually used for mobile applications, so it has to be implemented as small as possible while maintaining the image quality. Several image processing algorithms are used in ISP to improve captured image quality. Among the several image processing blocks, demosaicing and image filter are the core blocks in ISP. These blocks need line memories, but the number of line memories is limited in a low cost Single-chip CIS. In our design, high quality edge-adaptive and cross channel correlation considered demosaicing algorithm is adopted. To minimize the number of required line memories for image filter, we share the line memories using the characteristics of demosaicing algorithm which consider the cross correlation. Based on the proposed method, we can achieve both high quality and low hardware complexity with a small number of line memories. The proposed method was implemented and verified successfully using verilog HDL and FPGA. It was synthesized to gate-level circuits using 0.25um CMOS standard cell library. The total logic gate count is 37K, and seven and half line memories are used.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.77-85
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• 2008

This work proposes a 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for high-quality video systems such as TFT-LCD displays and digital TVs requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC optimizes power consumption and chip area at the target resolution and sampling rate based on a three-step pipeline architecture. The input SHA with gate-bootstrapped sampling switches and a properly controlled trans-conductance ratio of two amplifier stages achieves a high gain and phase margin for 12b input accuracy at the Nyquist frequency. A signal-insensitive 3D-fully symmetric layout reduces a capacitor and device mismatch of two MDACs. The proposed supply- and temperature- insensitive current and voltage references are implemented on chip with a small number of transistors. The prototype ADC in a 0.18um 1P6M CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 2.12LSB, respectively. The ADC shows a maximum SNDR of 53dB and 51dB and a maximum SFDR of 68dB and 66dB at 120MS/s and 130MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 108mW at 130MS/s and 1.8V.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.14-20
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• 2007

This paper presents quaternary D flip-flop with advanced performance. Quaternary D flip-flop is composed of the components such as thermometer code output circuit, EX-OR gate, bias inverter, transmission gate and binary D flip-flop circuit. The designed circuit is simulated by HSPICE in $0.35{\mu}m$ one-poly six-metal CMOS process parameters with a single +3.3V supply voltage. In the simulations, sampling frequencies is measured around 100MHz. The PDP parameters and FOM we estimated to be 59.3fJ, 33.7 respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.4
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• pp.88-95
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• 2015

This paper presents a new analysis of RF negative resistance (RFNR) circuits, known as a negative resistance generator. For accurate equation analysis of RFNR, this study examined the effects of the gate resistance and the source parasitic capacitance of the transistor. In addition, the input admittance of the conventional equation was calculated by looking into the source-terminal of the transistor, whereas that of the proposed equation was calculated by examining the gate-terminal of the transistor. The proposed equation analysis is more accurate than that of the conventional analysis, especially for higher frequency range. This paper verify the accuracy of the proposed analysis at high frequency range using the simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.92-97
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• 2009

Low power consumption is crucial for medical implantable devices. A low-power 4th-order band-pass Gm-C filter with distributed gain stage for the sensing stage of the implantable cardiac pacemaker is proposed. For the implementation of large-time constants, a floating-gate operational transconductance amplifier with current division is employed. Experimental results for the filter have shown a SFDR of 50 dB. The power consumption is below $1.8{\mu}W$, the power supply is 1.5 V, and the core area is $2.4\;mm{\times}1.3\;mm$. The filter was fabricated in a 1-poly 4-metal $0.35-{\mu}m$ CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.39-48
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• 2009

Human face tracking has gradually become an important issue in applications for portable multimedia devices such as digital camcorder, digital still camera and cell phone. Current embedded face tracking software implementations lack the processing abilities to track faces in real time mobile video processing. In this paper, we propose a power efficient hardware-based face tracking architecture operating in real time. The proposed system was verified by FPGA prototyping and ASIC implementation using Samsung 65nm CMOS process. The implementation result shows that tracking speed is less than 8.4 msec with 150K gates and 20 mW average power consumption. Consequently it is validated that the proposed system is adequate for portable multimedia device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.367-373
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• 2001

A programmable A/D converter is designed with 8 N and P channel MOSFETs, respectively. In order to observe linear programmability of the EEPROM device during programming mode, a cell is developed with a 1.2 ${\mu}{\textrm}{m}$ double poly CMOS fabrication process in MOSIS. It is observed that the high resolution, of say 10m Volt, is valid in the range 1.25volts to 2volts. The experimental result is used for simulating the programmable 8 bit A/D converter with Hspice. The A/D converter is demonstrated to consume low power, 37㎽ by utilizing a programming operation. In addition, the converter is attained at the conversion frequency of 333 MHz.