• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.851-858
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• 2012

In this paper, we design a seismic data acquisition system(SDAS) and implement it. This system is essential for development of a noble local earthquake disaster preventing system in population center. In the system, we choose a proper MEMS-type triaxial accelerometer as a sensor, and FPGA and ARM processor are used for implementing the system. In the SDAS, each module is realized by Verilog HDL and C Language. We carry out the ModelSim simulation to verify the performances of important modules. The simulation results show that the FPGA-based data acquisition module can guarantee an accurate time-synchronization for the measured data from each axis sensor. Moreover, the FPGA-ARM based embedded technology in system hardware design can reduce the system cost by the integration of data logger, communication sever, and facility control system. To evaluate the data acquisition performance of the SDAS, we perform experiments for real seismic signals with the exciter. Performances comparison between the acquired data of the SDAS and the reference sensor shows that the data acquisition performance of the SDAS is valid.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.116.1-116.1
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• 2016

반도체 가스센서에서는 가연성 및 탄화수소계 가스를 감지 하기 위해서 $100{\sim}500^{\circ}C$ 이상의 동작온도를 필요로 한며, 이에 따라 반도체식 가스센서의 마이크로 히터 소재는 고온에서 열적 안정성이 있는 소재가 요구된다. 현재 상용화되고 있는 반도체식 가스센서는 실리콘(Silicon) 기반의 MEMS 기술을 이용한 가스센서이며, 구조적으로나 성능적 한계가 드러남에 따라 실리콘 이외의 다양한 재료의 MEMS 응용기술 개발이 필요한 실정이다. 본 연구에서는 이러한 실리콘의 재료적 한계를 극복하기 위해 다공성 알루미늄 산화물(AAO)을 기판으로 사용하여 마이크로 히터를 제작하였다. AAO의 제작에 앞서 CMP, 화학연마, 전해연마를 이용하여 적합한 전처리 공정을 선정하였고, AAO 제작 시 온도, 시간, 전압의 변수를 주어 마이크로 히터 기판에 적합한 공정을 탐색하였다. 마이크로 플랫폼은 MEMS 공정으로 제작되었으며, PR(Photo Resist)을 LPR(Liquid Photo Resist)과 DFR(Dry Film Resist)로 각각 2종 씩 선택하여 AAO에 적합한 제품을 선정하였다. 제작된 마이크로 히터는 $1.8mm{\times}1,8mm$로 소형화 하였고, 열손실의 제어를 위해 열확산 방지층을 추가하였다. 구동 온도, 소비전력, 장시간 구동시 안정성의 측정 및 평가는 적외선 열화상 카메라와 kiethly 2420 source meter를 이용하여 측정하였으며, 열확산 방지층의 유 무에 따른 온도 분포 및 소비전력을 비교평가 하였다. 최종적으로는 현재 사용화 되어있는 가스센서들의 소비전력과 비교 평가 하여 논의 하였다.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.27-30
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• 2012

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1315-1320
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• 2003

The thermal expansion coefficient, which causes the micro failure at the interfacial state of thin films is necessary to consider for proper designing MEMS. The effect of temperature on the coefficient of thermal expansion(CTE) of $SiO_2$ and $Si_3N_4$ film was investigated. Thermal strain induced by mismatch of CTE between substrate and thin film continuously measured with resolution-improved electronic speckle pattern interferometry(ESPI). The thermal stress induced by mismatch of CTE derivate through thermal strain. The thermal expansion coefficients of thin film were calculated with the general equation of CTE and thermal stress in thin films, and it confirmed that CTE of $SiO_2$changed from $0.25{\times}10^{-6}/^{\circ}C$ to $1.4{\times}10^{-6}/^{\circ}C$ with temperature increasing from 50 to $600^{\circ}C$

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.58-64
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• 2006

In this study, we describe a low-temperature wafer-level thermocompression bonding using electroplated gold seal line and bonding pads by electroplating method for RF-MEMS devices. Silicon wafers, electroplated with gold (Au), were completely bonded at $320^{\circ}C$ for 30 min at a pressure of 2.5 MPa. The through-hole interconnection between the packaged devices and external terminal did not need metal filling process and was made by gold films deposited on the sidewall of the throughhole. This process was low-cost and short in duration. Helium leak rate, which is measured to evaluate the reliability of bonded wafers, was $2.7{\pm}0.614{\times}10^{-10}Pam^{3}/s$. The insertion loss of the CPW packaged was $-0.069{\sim}-0.085\;dB$. The difference of the insertion loss between the unpackaged and packaged CPW was less than -0.03. These values show very good RF characteristics of the packaging. Therefore, gold thermocompression bonding can be applied to high quality hermetic wafer level packaging of RF-MEMS devices.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1637-1638
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• 2006

HVAC 시스템은 쾌적하고 깨끗한 운전환경을 만들어 줌으로써 운전자에게 향상된 안락성과 안전성을 제공한다. 이때 센서는 시시각각으로 변화하는 차실 내외의 환경변화에 대한 정보를 검출하여 HVAC 제어 유니트에 제공한다. 현재 HVAC 시스템에 사용되고 있는 후막 가스센서는 소자 크기와 소비전력이 크고, 제작공정이 까다로워 생산성이 낮은 단점이 있다. 이와 같은 문제점을 해결하기 위해서 최근에는 초소형화, 저소비전력, 대량생산에 의한 저가격화가 가능한 MEMS 가스센서의 연구개발이 활발히 진행되고 있다. 본 연구에서는 MEMS 구조체를 이용한 마이크로 가스센서를 설계 및 제작하였고, 감도특성을 고찰하였다. 가스 감지막은 금속산화물 페이스트를 스크린 프린팅 하는 종래의 방법 대신 MEMS 구조체에 적용 가능한 sol-gel 프로세스에 의해 형성하였다. 또 가스 감지전극과 micro-heater를 동일 평면상에 제작, 공정을 간소화하여 저가화를 시도하였다. MEMS 구조체 위에 제작된 Pt 박막 micro-heater의 인가전압에 따른 발열특성을 조사한 결과, 발열온도가 인가전압에 비례하는 이상적인 선형성을 나타내었으며, $300^{\circ}C$의 동작 온도에 도달하기 위해 65mW 이하의 저전력 동작이 가능하였다. 가스 센서의 감도특성 확인 실험은 CO 가스 10ppm, NO 가스 0.3ppm을 기준으로 수행되었으며, CO 및 NO에 대해 Rs(sensitivity, 가스반응저항/초기저항) 값은 각각 0.753 과 2.416로 우수한 성능을 나타내었다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.3
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• pp.22-30
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• 2009

GPS and INS integrated systems are expected to become commonly available as a result of low cost Micro-Electro-Mechanical Sensor (MEMS) technology. However, the current performance achieved by low cost sensors is still relatively poor due to the large inertial sensor errors. This is particularly prevalent in the urban environment where there are significant periods of restricted sky view. To reduce the inertial sensor error, GPS and low cost INS are integrated using a Loosely Coupled Kalman Filter architecture which is appropriate in most applications where there is good satellite availability. In this paper, we present the GPS/INS sensor Integration using Loosely Coupled Kalman Filter approach. We also compare the simulation results of Wander Azimuth Strapdown Mechanization Scheme with the reference values generated by the ZH35C trajectory simulator that is describe mathematically either by the geometry of the path, or as the position of the object over time.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.4
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• pp.391-398
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• 2010

In this paper, we propose a sensor design by using a polysilicon strain gauge bonded to a metal diaphragm. The fabrication process of the thin polysilicon strain gauges having thicknesses of $50\;{\mu}m$ was established using conventional MEMS technologies; further, the technique of glass frit bonding of the polysilicon strain gauge to the stainless steel diaphragm was established. Performance of the polysilicon strain gauge bonded to the metal cantilever beam was evaluated. The gauge factor, temperature coefficient of resistance (TCR), nonlinearity, and hysteresis of the polysilicon strain gauge were measured. The results demonstrate that the resistance increases linearly with tensile stress, while it decreases with compressive stress. The value of the gauge factor, which represents the sensitivity of strain gauges, is 34.0; this value is about 7.15 times higher than the gauge factor of a metal-foil strain gauge. The resistance of the polysilicon strain gauge decreases linearly with an increase in the temperature, and TCR is $-328\;ppm/^{\circ}C$. Further, nonlinearity and hysteresis are 0.21 % FS and 0.17 % FS, respectively.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.