[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5626/JCSE.2014.8.3.129

Circuit Modelling and Eigenfrequency Analysis of a Poly-Si Based RF MEMS Switch Designed and Modelled for IEEE 802.11ad Protocol

Singh, Tejinder (Discipline of Electronics and Electrical Engineering, Lovely Professional University)
Pashaie, Farzaneh (Department of Mechatronics, Islamic Azad University)

Publication Information

Journal of Computing Science and Engineering / v.8, no.3, 2014 , pp. 129-136 More about this Journal

Abstract

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

Keywords

RF MEMS; Equivalent circuit modelling; Eigenfrequency analysis; Capacitive switch; Millimeter wave frequencies;

Citations & Related Records

Times Cited By KSCI : 1 (Citation Analysis)

Reference
Cited By KSCI

1	D. Peroulis, S. Pacheco, K. Sarabandi, and P. B. Katehi, "MEMS devices for high isolation switching and tunable filtering," in Proceedings of the IEEE MTT-S International Microwave Symposium Digest, Boston, MA, 2000, pp. 1217-1220.
2	C. L. Goldsmith, Z. Yao, S. Eshelman, and D. Denniston, "Performance of low-loss RF MEMS capacitive switches," IEEE Microwave and Guided Wave Letters, vol. 8, no. 8, pp. 269-271, 1998. DOI ScienceOn
3	G. M. Rebeiz and J. B. Muldavin, "RF MEMS switches and switch circuits," IEEE Microwave Magazine, vol. 2, no. 4, pp. 59-71, 2001. DOI ScienceOn
4	D. Hyman and M. Mehregany, "Contact physics of gold microcontacts for MEMS switches," IEEE Transactions on Components and Packaging Technologies, vol. 22, no. 3, pp. 357-364, 1999. DOI
5	J. Kennedy, "Surface mount components reduce broadband equipment costs," Applied Microwave and Wireless, vol. 13, no. 1, pp. 102-108, 2001.
6	S. D. Lee, B. C. Jun, S. D. Kim, H. C. Park, J. K. Rhee, and K. Mizuno, "An RF-MEMS switch with low-actuation voltage and high reliability," Journal of Microelectromechanical Systems, vol. 15, no. 6, pp. 1605-1611, 2006. DOI ScienceOn
7	S. Pacheco, C. T. Nguyen, and L. P. Katehi, "Micromechanical electrostatic K-band switches," in Proceedings of the IEEE MTT-S International Microwave Symposium Digest, Baltimore, MD, 1998, pp. 1569-1572.
8	S. C. Shen, D. Caruth, and M. Feng, "Broadband low actuation voltage RF MEMS switches," in Proceedings of the 22nd IEEE GaAs IC Symposium, Seattle, WA, 2000, pp. 161-164.
9	G. M. Rebeiz, RF MEMS: Theory, Design, and Technology, New York: Wiley, 2003.
10	T. Singh and A. Kumari, "Design and modelling of a robust wideband poly-Si and Au based capacitive RF MEMS switch for millimeter wave applications," in Proceedings of the 2nd International Conference on Computing Sciences, 2013, pp. 106-114.
11	T. Singh, "Effective stress modelling of membranes made of gold and aluminum materials used in radio-frequency microelectromechanical system switches," Transactions on Electrical and Electronic Materials, vol. 14, no. 4, pp. 172-176, 2013. DOI ScienceOn
12	C. Palego, J. Deng, Z. Peng, S. Halder, J. C. Hwang, D. I. Forehand, D. Scarbrough, C. L. Goldsmith, I. Johnston, S. K. Sampath, et al., "Robustness of RF MEMS capacitive switches with molybdenum membranes," IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 12, pp. 3262-3269, 2009. DOI ScienceOn
13	T. Singh and N. Khaira, "High isolation single-pole fourthrow RF MEMS switch based on series-shunt configuration," The Scientific World Journal, vol. 2014, no. 605894, pp. 1-6, 2014.
14	W. N. Sharpe, B. Yuan, R. Vaidyanathan, and R. L. Edwards, "Measurements of Young's modulus, Poisson's ratio, and tensile strength of polysilicon," in Proceedings of the IEEE 10th Annual International Workshop on Micro Electro Mechanical Systems, Nagoya, Japan, 1997, pp. 424-429.
15	J. B. Rizk and G. M. Rebeiz, "W-band CPW RF MEMS circuits on quartz substrates," IEEE Transactions on Microwave Theory and Techniques, vol. 51, no. 7, pp. 1857-1862, 2003. DOI ScienceOn
16	J. B. Muldavin and G. M. Rebeiz, "High-isolation CPW MEMS shunt switches. Part 1: modelling," IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 6, pp. 1045-1052, 2000. DOI ScienceOn

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