• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.55-58
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• 2003

This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.3
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• pp.24-32
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• 2011

[ $SF_6$ ]gas, which has an excellent dielectric strength and interruption performance, is used in various applications such as gas insulated switchgear (GIS) in substations. However, since $SF_6$ has a high global warming potential (GWP), it is necessary to find an eco-friendly alternative insulation gas. In order to examine the possibility of using alternative insulation gases for $SF_6$ in power distribution system equipment, the dielectric strength and physical phenomena of dry air in a quasi-uniform electric field are investigated experimentally in this paper. As a result, the breakdown voltages for positive polarity are higher than those for negative polarity under impulse voltage applications. The negative 50[%] flashover voltage, $V_{50}$ of dry air under conditions above 0.4[MPa] gas pressure, is higher than 150[kV], that is the basic impulse insulation level of distribution equipment. The $V_{50}$ increases linearly with increasing the gas pressure, regardless of the waveform and polarity of the applied impulse voltages. The voltage-time curves are dependent on the rise time of the impulse voltage and gas pressure. Furthermore, streamer discharge was observed through light emission images by an ICCD camera under impulse voltage applications.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.97-100
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• 2009

A negative waveform was studied to improve the driving characteristics of reset and address periods in ac PDP. Comparative experiments between negative and conventional positive waveforms were performed with 42-inch XGA PDP module. The negative waveform showed lower breakdown voltage than the conventional positive waveform in reset period. Due to its weak and stable discharge during reset period, the contrast ratio was improved by decreasing the black luminance. During address period, the discharge time-lag was measured. The formative time lag ($=T_f$) of negative waveform was improved about 22.8% than $T_f$ of conventional positive waveform.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.853-858
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• 2003

In this study, a new simplified technology for fabricating high density trench gate DMOSFETs using only three mask layers and TEOS/nitride spacer is proposed. Due to the reduced masking steps and self-aligned process, this technique can afford to fabricate DMOSFETs with high cell density up to 100 Mcell/inch$^2$ and cost-effective production. The resulting unit cell pitch was 2.3∼2.4${\mu}$m. The fabricated device exhibited a excellent specific on-resistance characteristic of 0.36m$\Omega$. cm$^2$ with a breakdown voltage of 42V. Moreover, time to breakdown of gate oxide was remarkably increased by the hydrogen annealing after trench etching.

• Journal of Semiconductor Engineering
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• v.3 no.2
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.65-73
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• 1986

Experiment have been conducted about thin oxide characteristics according to O2/N2 ratio needed for EEPROM cell fabrication. As a result, we think that there is no problem even if we grow oxide layer with large O2/N2 ratio and short exidation time and when the water is implated by As before oxidation, the oxide breakdown field is about IMV/cm lower than that is not implanted. Especially, the thin oxide characteristic seems to be affected largely by wafer cleaning and oxidation in air. On the basis of these, tunnel type EEPROM cell is fabricated by 3um CMOS process and its characteristic is studied. Tunnel oxide thickness(100\ulcorner is chosen to allow Fowler-Nordheim tunneling to charge the floating gate at the desired programming voltage and tunnel area(2x2um\ulcorneris chosen to increase capacitive coupling ratio. For program operation, high voltage (20-22V) is applied to the control gate, while both drain and source are gdrounded. The drain voltage for erase is 16V. It is shown that charge retention characteristics is not limited by leakage in the oxide and program/erase endurance is over 10E4 cycles of program erase operation.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.280-285
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• 2016

In this study, we investigated the influences of potassium fluoride(KF) addition on the surface characteristics of plasma electrolytic oxidation(PEO) coating produced on Al alloy. The PEO of marine grade Al alloy(5083 grade) was conducted in KOH 1g/L solution adding different concentrations of KF(0, 1 and 2 g/L) under a galvanostatic regime. With KF addition, unusual behavior was observed on the voltage-time characteristic curves, which can be characterized by the following process: (i) initial rapid increase in voltage (ii) a short plateau after 1st breakdown (iii) gradual increase in voltage (iv) intermittent fluctuation of voltage after 2nd breakdown. The SEM observation revealed irregular surface morphology with KF addition, as compared with one formed without KF addition, which had a reticulate structure. The XRD analysis detected the formation of aluminium hydroxide fluoride hydrate($H_{4.76}Al_2F_{3.24}O_{3.76}$) on surface grown by PEO process with KF. Particularly, at very early stage of the process (~ 120 s), thin film was formed having nanoporous structure, and F element was confirmed on surface by EDS analysis. The thickness and surface roughness of the coating increased with increasing KF concentration. As a result, KF addition was found to be less beneficial influences on PEO of marine grade Al alloy, and therefore needs further research to improve its capability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.