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http://dx.doi.org/10.9728/dcs.2017.18.6.1193

Advanced IGBT structure for improved reliability  

Lee, Myoung Jin (School of Electronics and Computer Engineering, Chonnam National University)
Publication Information
Journal of Digital Contents Society / v.18, no.6, 2017 , pp. 1193-1198 More about this Journal
Abstract
The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.
Keywords
Insulated Gate Bipolar Transistor [IGBT]; Breakdown voltage [BV]; power loss; switching speed; DC transmission;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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