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Electrical Characteristics of Thin SiO$_2$Layer  

Hong, Nung-Pyo (Dept. of Electrical Engineering, Kwangwoon University)
Hong, Jin-Woong (Dept. of Electrical Engineering, Kwangwoon University)
Publication Information
KIEE International Transactions on Electrophysics and Applications / v.3C, no.2, 2003 , pp. 55-58 More about this Journal
Abstract
This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.
Keywords
MOS; Breakdown strength; Oxide(SiO$_2$); C-V Plot;
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