Journal of Semiconductor Engineering

The Institute of Semiconductor Engineers (반도체공학회)
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Effect of Channel Variation on Switching Characteristics of LDMOSFET

  • Lee, Chan-Soo (School of Electrical and Computer Engineering, Chungbuk National University) ;
  • Cui, Zhi-Yuan (School of Electrical and Computer Engineering, Chungbuk National University) ;
  • Kim, Kyoung-Won (Hynix Semiconductor Inc., Memory R&D)
  • Received : 2022.04.06
  • Accepted : 2022.06.15
  • Published : 2022.09.30
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Abstract

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

Keywords

Acknowledgement

The authors would like to thank the IC Design Center (IDEC) of Korea for supporting chip implementation and EDA tools.

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