Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.357-360
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- 2003
Design of 4.5kV/1.5kA IGCT
4.5kV/1.5kA급 IGCT 설계 및 특성분석
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Kim, Hyoung-Woo
(Power Semiconductor Group, KERI)
;
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Kim, Sang-Cheol
(Power Semiconductor Group, KERI)
;
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Seo, Kil-Su
(Power Semiconductor Group, KERI)
;
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Kim, Eun-Dong
(Power Semiconductor Group, KERI)
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김형우
(한국전기연구원 전력반도체연구그룹)
;
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김상철
(한국전기연구원 전력반도체연구그룹)
;
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서길수
(한국전기연구원 전력반도체연구그룹)
;
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김은동
(한국전기연구원 전력반도체연구그룹)
- Published : 2003.07.10
Abstract
In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.