• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.287-292
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• 2016

A multiphase clock and data recovery (CDR) circuit having a novel rotational bang-bang phase detector (RBBPD) is demonstrated. The proposed 1/4-rate RBBPD decides the locking point using a single clock phase among sequentially rotating 4 clock phases. With this, our RBBPD has significantly reduced power consumption and chip area. A prototype 10-Gb/s 1/4-rate CDR with RBBPD is successfully realized in 65-nm CMOS technology. The CDR consumes 5.5 mW from 1-V supply and the clock signal recovered from $2^{31}-1$ PRBS input data has 0.011-UI rms jitter.

• Journal of IKEEE
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• v.13 no.2
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• pp.118-125
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• 2009

With recent advancement of high-speed, multi-gigabit data transmission capabilities, transmitters usually send data without clock signals for reduction of hardware complexity, power consumption, and cost. Therefore clock and data recovery circuits(CDR) become important to recover the clock and data signals and have been widely studied. This paper presents the design of 10Gbps CDR in 0.18$\mu$m CMOS process. A quarter-rate bang-bang phase detector is designed to reduce the power and circuit complexity, and a 4-stage LC-type VCO is used to improve the jitter characteristics. Simulation results show that the designed CDR consumes 80mW from a 1.8V supply, and exhibits a peak-to-peak jitter of 2.2ps in the recovered clock. The chip layout area excluding pads is 1.26mm$\times$1.05mm.

• Journal of IKEEE
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• v.17 no.4
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• pp.544-549
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• 2013

This paper describes a modified binary phase detector (Bang-Bang phase detector - BBPD) for jitter reduction in clock and data recovery (CDR) circuits. The proposed PD reduces ripples in the VCO control voltage resulting in reduced jitter for CDR circuits. A 2.5 Gbps CDR circuit with a proposed BBPD has been designed and verified using Dongbu $0.13{\mu}m$ CMOS technology. Simulation shows the CDR with proposed PD recovers data with peak-to-peak jitter of 10.96ps, rms jitter of 0.86ps, and consumes 16.9mW.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.1
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• pp.90-96
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• 2014

This paper presents a practical linearization technique for a wide-band bang-bang digital phase locked-loop(BBDPLL) by selecting optimal loop gains. In this paper, limitation of the theoretical design method for BBDPLL is explained, and introduced how to implement practical BBDPLLs with CMOS process. In the proposed BBDPLL, the limited cycle noise is removed by reducing the proportional gain while increasing the integer array and dither gain. Comparing to the conventional BBDPLL, the proposed one shows a small area, low power, linear characteristic. Moreover, the proposed design technique can control a loop bandwidth of the BBDPLL. Performance of the proposed BBDPLL is verified using CppSim simulator.

• Journal of IKEEE
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• v.10 no.1 s.18
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• pp.10-15
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• 2006

In this paper, a clock and data recovery (CDR) circuit for a serial link with a half rate 4x oversampling phase and frequency detector structure without a reference clock is described. The phase detector (PD) and frequency detector (FD)are designed by 4X oversampling method. The PD, which uses bang-bang method, finds the phase error by generating four up/down signal and the FD, which uses the rotational method, finds the frequency error by generating up/down signal made by the PD output. And the six signals of the PD and the FD control an amount of current that flows through the charge pump. The VCO composed of four differential buffer stages generates eight differential clocks. Proposed circuit is designed using the 0.18um CMOS technology and operating voltage is 1.8V. With a 4X oversampling PD and FD technique, tracking range of 24% at 3.125Gbps is achieved.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.2
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• pp.72-77
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• 2009

In this paper, a 3.2Gb/s clock and data recovery (CDR) circuit for a high-speed serial data communication without the reference clock is described This CDR circuit consists of 5 parts as Phase and frequency detector(PD and FD), multi-phase Voltage Controlled-Oscillator(VCO), Charge-pumps (CP) and external Loop-Filter(KF). It is adapted the PD and FD, which incorporates a half-rate bang-bang type oversampling PD and a half-rate FD that can improve pull-in range. The VCO consists of four fully differential delay cells with rail-to-rail current bias scheme that can increase the tuning range and tuning linearity. Each delay cell has output buffers as a full-swing generator and a duty-cycle mismatch compensation. This materialized CDR can achieve wide pull-in range without an extra reference clock and it can be also reduced chip area and power consumption effectively because there is no additional Phase Locked- Loop(PLL) for generating reference clock. The CDR circuit was designed for fabrication using 0.18um 1P6M CMOS process and total chip area excepted LF is $1{\times}1mm^2$. The pk-pk jitter of recovered clock is 26ps at 3.2Gb/s input data rate and total power consumes 63mW from 1.8V supply voltage according to simulation results. According to test result, the pk-pk jitter of recovered clock is 55ps at the same input data-rate and the reliable range of input data-rate is about from 2.4Gb/s to 3.4Gb/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.36-42
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• 2008

40Gb/s CMOS Clock and Data Recovery circuit design for optical serial link is proposed. The circuit generates 8 multiphase clock using LC tank PLL and controls the phase between the clock and the data using the $2{\times}$ oversampling Bang-Bang PD. 40Gb/s input data is 1:4 demultiplexed and recovered to 4 channel 10Gb/s outputs. The design was progressed to separate the analog power and the digital power. The area of the chip is $2.8{\times}2.4mm^2$ for the inductors and the power dissipation is about 200mW. The chip has been fabricated using 0.18um CMOS process. The measured results show that the chip recovers the data up to 9.5Gb/s per channel(Equivalent to serial input rate of up to 38Gb/s).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.28-33
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• 2006

An integrated 3.125Gbps clock and data recovery (CDR) circuit is presented. The circuit does not need a reference clock. It has a phase and frequency detector (PFD), which incorporates a bang-bang type 4X oversampling PD and a rotational frequency detector (FD). It also has a ring oscillator type VCO with four delay stages and three zero-offset charge pumps. With a proposed PD and m, the tracking range of 24% can be achieved. Experimental results show that the circuit is capable of recovering clock and data at rates of 3.125Gbps with 0.18 um CMOS technology. The measured recovered clock jitter (p-p) is about 14ps. The CDR has 1.8volt single power supply. The power dissipation is about 140mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.130-134
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• 2008

This paper presents a clock and data recovery(CDR) using a quarter-rate technique. The proposed CDR helps reduce the VCO frequency and is thus advantageous for high speed application. It can achieve a low jitter operation and extend the pull-in range without a reference clock. The CDR consists of a quarter-rate bang-bang type phase detector(PD) quarter-rate frequency detector(QRFD), two charge pumps circuits(CPs), low pass filter(LPF) and a ring voltage controlled oscillator(VCO). The Proposed CDR has been fabricated in a standard $0.18{\mu}m$ 1P6M CMOS technology. It occupies an active area $1{\times}1mm^2$ and consumes 98 mW from a single 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.24-33
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• 2002

For mixed signal circuits that integrate both analog and digital blocks onto the same chip, testing the mixed circuits has become the bottleneck. Since most of mixed signal circuits are functionally tested, mixed signal testing needs expensive automatic test equipments for test input generation and response acquisition. In this paper, a new efficient BIST is developed which can be used for mixed signal circuits. In the new BIST, only faults on embedded resistances, capacitances and its combinations are considered. To guarantee the quality of chips, the new BIST performs both voltage testing and phase testing. Using these two testing modes, all the faults are detected. In order to support this technique, the voltage detector and the phase detector are developed. Experimental results prove the efficiency of the new BIST.