• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.98-107
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• 2013

This work describes a 13b 100 MS/s 0.13 um CMOS four-stage pipeline ADC for 3G communication systems. The proposed SHA-free ADC employs a range-scaling technique based on switched-capacitor circuits to properly handle a wide input range of $2V_{P-P}$ using a single on-chip reference of $1V_{P-P}$. The proposed range scaling makes the reference buffers keep a sufficient voltage headroom and doubles the offset tolerance of a latched comparator in the flash ADC1 with a doubled input range. A two-step reference selection technique in the back-end 5b flash ADC reduces both power dissipation and chip area by 50%. The prototype ADC in a 0.13 um CMOS demonstrates the measured differential and integral nonlinearities within 0.57 LSB and 0.99 LSB, respectively. The ADC shows a maximum signal-to-noise-and-distortion ratio of 64.6 dB and a maximum spurious-free dynamic range of 74.0 dB at 100 MS/s, respectively. The ADC with an active die area of 1.2 $mm^2$ consumes 145.6 mW including high-speed reference buffers and 91 mW excluding buffers at 100 MS/s and a 1.3 V supply voltage.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.9
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• pp.47-54
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• 2008

Cost reduction requires lowering number of power devices used in the converter driving SRM. This is quite feasible in SRM drive systems than in other drive systems. This paper deals with analysis and simulation of a novel two phase SRM. A novel two phase SRM has high performance, self-starling capability, high efficiency, and low manufacturing cost. Additionally, the stator back iron does not experience any flux reversal as the flux is in the same direction whether phase A or B is excited leading to a greater reduction in core losses. The magnetic analysis and design considerations of the novel two phase SRM have been obtained by the finite element analysis (FEM).

• The KIPS Transactions:PartA
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• v.18A no.3
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• pp.109-114
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• 2011

We describe a technique for automatically proving compiler optimizations sound, meaning that their transformations are always semantics-preserving. As is well known, IR (Intermediate Representation) optimization is an important step in a compiler backend. But unfortunately, it is difficult to detect and debug the IR optimization errors for compiler developers. So, we introduce a C level error check system for detecting the correctness of these IR transformation techniques. In our system, we first create an IR-to-C converter to translate IR to C code before and after each compiler optimization phase, respectively, since our technique is based on the Memory Comparison-based Clone(MeCC) detector which is a tool of detecting semantic equivalency in C level. MeCC accepts only C codes as its input and it uses a path-sensitive semantic-based static analyzer to estimate the memory states at exit point of each procedure, and compares memory states to determine whether the procedures are equal or not. But MeCC cannot guarantee two semantic-equivalency codes always have 100% similarity or two codes with different semantics does not get the result of 100% similarity. To increase the reliability of the results, we describe a technique which comprises how to generate C codes in IR-to-C transformation phase and how to send the optimization information to MeCC to avoid the occurrence of these unexpected problems. Our methodology is illustrated by three familiar optimizations, dead code elimination, instruction scheduling and common sub-expression elimination and our experimental results show that the C level error check system is highly reliable.

• Journal of Biomedical Engineering Research
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• v.18 no.4
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• pp.429-438
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• 1997

Mechanical valve is one of the most widely used implantable artificial organs of which the reliability is so important that its failure means the death of patient. Therefore early noninvasive detection is essentially required, though mechanical valve failure with thrombosis is the most common. The objective of this paper is to detect the thrombosis formation by spectral analysis and neural network. Using microphone and amplifier, we measured the sound from the mechanical valve which is attached to the pneumatic ventricular assist device. The sound was sampled by A/D converter(DaqBook 100) and the periodogram is the main algorithm for obtaining spectrum. We made the thrombosis models using pellethane and silicon and they are thrombosis model on the valvular disk, around the sewing ring and fibrous tissue growth across the orifice of valve. The performance of the measurment system was tested firstly using 1 KHz sinusoidal wave. The measurement system detected well 1KHz spectrum as expected. The spectrum of normal and 5 kinds of thrombotic valve were obtained and primary and secondary peak appeared in each spectrum waveform. We find that the secondary peak changes according to the thrombosis model. So to distinguish the secondary peak of normal and thrombotic valve quantatively, 3 layer back propagation neural network, which contains 7, 000 input node, 20 hidden layer and 1 output was employed The trained neural network can distinguish normal and valve with more than 90% probability. As a conclusion, the noninvasive monitoring of implanted mechanical valve is possible by analysing the acoustical spectrum using neural network algorithm and this method will be applied to the performance evaluation of other implantable artificial organs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.1-11
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• 2008

This work proposes a 15b 50MS/s CMOS pipeline ADC based on digital code-error calibration. The proposed ADC adopts a four-stage pipeline architecture to minimize power consumption and die area and employs a digital calibration technique in the front-end stage MDAC without any modification of critical analog circuits. The front-end MDAC code errors due to device mismatch are measured by un-calibrated back-end three stages and stored in memory. During normal conversion, the stored code errors are recalled for code-error calibration in the digital domain. The signal insensitive 3-D fully symmetric layout technique in three MDACs is employed to achieve a high matching accuracy and to measure the mismatch error of the front-end stage more exactly. The prototype ADC in a 0.18um CMOS process demonstrates a measured DNL and INL within 0.78LSB and 3.28LSB. The ADC, with an active die area of $4.2mm^2$, shows a maximum SNDR and SFDR of 67.2dB and 79.5dB, respectively, and a power consumption of 225mW at 2.5V and 50MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.54-63
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• 2006

This work proposes a 14b 100MS/s 0.18um CMOS ADC with optimized resolution, conversion speed, die area, and power dissipation to obtain the performance required in the fourth-generation mobile communication systems. The 3-stage pipeline ADC, whose optimized architecture is analyzed and verified with behavioral model simulations, employs a wide-band low-noise SHA to achieve a 14b level ENOB at the Nyquist input frequency, 3-D fully symmetric layout techniques to minimize capacitor mismatch in two MDACs, and a back-end 6b flash ADC based on open-loop offset sampling and interpolation to obtain 6b accuracy and small chip area at 100MS/s. The prototype ADC implemented in a 0.18um CMOS process shows the measured DNL and INL of maximum 1.03LSB and 5.47LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 59dB and 72dB, respectively, and a power consumption of 145mW at 100MS/s and 1.8V. The occupied active die area is $3.4mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.55-64
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• 2006

This work proposes a calibration-free 14b 70MS/s 0.13um CMOS ADC for high-performance integrated systems such as WLAN and high-definition video systems simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs signal insensitive 3-D fully symmetric layout techniques in two MDACs for high matching accuracy without any calibration. A three-stage pipeline architecture minimizes power consumption and chip area at the target resolution and sampling rate. The input SHA with a controlled trans-conductance ratio of two amplifier stages simultaneously achieves high gain and high phase margin with gate-bootstrapped sampling switches for 14b input accuracy at the Nyquist frequency. A back-end sub-ranging flash ADC with open-loop offset cancellation and interpolation achieves 6b accuracy at 70MS/s. Low-noise current and voltage references are employed on chip with optional off-chip reference voltages. The prototype ADC implemented in a 0.13um CMOS is based on a 0.35um minimum channel length for 2.5V applications. The measured DNL and INL are within 0.65LSB and l.80LSB, respectively. The prototype ADC shows maximum SNDR and SFDR of 66dB and 81dB and a power consumption of 235mW at 70MS/s. The active die area is $3.3mm^2$.