• 한국표면공학회지
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• 제51권4호
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• pp.224-230
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• 2018

In this study, Mg films were prepared on hot dip aluminized steel (HDA) by using a sputtering method as a high corrosion resistance coating. The corrosion resistance of the Mg films was improved by controlling the morphology and the crystal structure of films by adjusting the Ar gas pressure during the coating process. Anodic polarization measurement results confirm that the corrosion resistance of the Mg films was affected by surface morphology and crystal structure. The corrosion resistance of the Mg coated HDA specimen increased with decreasing crystal size of the Mg coating and it was also improved by forming a film with denser morphology. The crystal structure oriented at Mg(101) plane showed the best corrosion resistance among crystal planes of the Mg metals, which is attributed to its relatively low surface energy. Neutral salt spray test confirmed that corrosion resistance of HDA can be greatly improved by Mg coating, which is superior to that of HDG (hot dip galvanized steel). The reason for the improvement of the corrosion resistance of Mg films on hot dip aluminized steel was due to the barrier effect by the Mg corrosion products formed by the corrosion of the Mg coating layer.

• 대한금속재료학회지
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• 제49권9호
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• pp.678-685
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• 2011

The aim of this study was to determine the effect of applied pressure and sintering temperature on the microstructure and mechanical properties for spark plasma sintering (SPS) from commercial pure titanium (CP-Ti) powders. Spark plasma sintering is a relatively new sintering technique in powder metallurgy which is capable of sintering metal and ceramic powers quickly to full density at a fairly low temperature due to its unique features. SPS of -200 mesh or -400 mesh CP-Ti powders was carried out in an $Ar+H_2$ mixed gas flowing atmosphere between $650^{\circ}C$ and $750^{\circ}C$ under 10 to 80 MPa pressure. When SPS was carried out at relatively low temperatures ($650^{\circ}C$ to $750^{\circ}C$), the high (>60 MPa) pressure had a marked effect on densification and grain growth suppression. The full density of titanium was achieved at temperatures and pressures above $700^{\circ}C$ and 60 MPa by spark plasma sintering. The crystalline phase and microstructure of titanium sintered up to $700^{\circ}C$ consisted of ${\alpha}$-Ti and equiaxed grains. Vickers hardness ranging from 293 to 362 Hv and strength ranging from 304 to 410 MPa were achieved for spark plasma sintered titanium.

• 한국표면공학회지
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• 제54권5호
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• pp.230-237
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• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.

• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• 한국재료학회지
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• 제31권9호
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• pp.532-538
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• 2021

In this study, a spray dryer is used to make granules of Y₂O₃ and YF₃, and then Y₅O₄F₇ is synthesized following heat treatment of them under Ar gas atmosphere at 600 ℃. Single and binary monomer mixtures are compared and analyzed to optimize photocurable monomer system for DLP 3D printing. The mixture of HEA and TMPTA at 8:2 ratio exhibits the highest photocuring properties and low viscosity with shear thinning behavior. The optimized photocurable monomer and synthesized Y₅O₄F₇ are therefore mixed and applied to printing process at variable solid contents (60, 70, 80, & 85 wt.%) and light exposure times. Under optimal light exposure conditions (initial exposure time: 1.2 s, basic exposure time: 5 s), YOF composites at 60, 70 & 80 wt.% solid contents are successfully printed. As a result of measuring the size of the printed samples compared to the dimensions of the designed bar type specimen, the deviation is found to increase as the YOF solid content increases. This shows that it is necessary to maximize the photocuring activity of the monomer system and to optimize the exposure time when printing using a high-solids ceramic slurry.

• 한국재료학회지
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• 제31권9호
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• pp.525-531
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• 2021

Carbon-encapsulated Ni catalysts are synthesized by an electrical explosion of wires (EEW) method and applied for CO₂ methanation. We find that the presence of carbon shell on Ni nanoparticles as catalyst can positively affect CO₂ methanation reaction. Ni@5C that is produced under 5 % CH₄ partial pressure in Ar gas has highest conversions of 68 % at 350 ℃ and 70 % at 400 ℃, which are 73 and 75 % of the thermodynamic equilibrium conversion, respectively. The catalyst of Ni@10C with thicker carbon layer shows much reduced activity. The EEW-produced Ni catalysts with low specific surface area outperform Ni catalysts with high surface area synthesized by solution-based precipitation methods. Our finding in this study shows the possibility of utilizing carbon-encapsulated metal catalysts for heterogeneous catalysis reaction including CO₂ methanation. Furthermore, EEW, which is a highly promising method for massive production of metal nanoparticles, can be applied for various catalysis system, requiring scaled-up synthesis of catalysts.

• 한국분말재료학회지
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• 제26권4호
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• pp.282-289
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• 2019

Ti has received considerable attention for aerospace, vehicle, and semiconductor industry applications because of its acid-resistant nature, low density, and high mechanical strength. A common precursor used for preparing Ti materials is $TiCl_4$. To prepare high-purity $TiCl_4$, a process based on the removal of $VOCl_3$ has been widely applied. However, $VOCl_3$ removal by distillation and condensation is difficult because of the similar physical properties of $TiCl_4$ and $VOCl_3$. To circumvent this problem, in this study, we have developed a process for $VOCl_3$ removal using Cu powder and mineral oil as purifying agents. The effects of reaction time and temperature, and ratio of purifying agents on the $VOCl_3$ removal efficiency are investigated by chemical and structural measurements. Clear $TiCl_4$ is obtained after the removal of $VOCl_3$. Notably, complete removal of $VOCl_3$ is achieved with 2.0 wt% of mineral oil. Moreover, the refined $TiCl_4$ is used as a precursor for the synthesis of Ti powder. Ti powder is fabricated by a thermal reduction process at $1,100^{\circ}C$ using an $H_2-Ar$ gas mixture. The average size of the Ti powder particles is in the range of $1-3{\mu}m$.

• 대한금속재료학회지
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• 제48권4호
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• pp.320-325
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• 2010

NiO thin films were deposited by radio frequency magnetron sputtering on glass substrates. The processing variables of the oxygen content, sputtering power, and pressure were varied to investigate the electrical properties and surface morphology of NiO films. It was found that the resistivity of NiO films at $1.22{\times}10^2{\Omega}cm$ (2.5% $O_2$ in Ar gas) was greatly reduced to$ 2.01{\times}10^{-1}$ ${\Omega}cm$ (100% oxygen) under a typical sputtering condition of 6 mTorr and 200 watts. In an effort to observe the resistivity variances, the sputtering power was varied from 80 to 200 watts at 6 mTorr with 100% $O_2$. However, the resistivity of the NiO films changed in the range of $10^{-1}-10^{-2}$ ${\Omega}cm$. The dependence on the sputtering power was therefore found to be weak in this experiment. When the sputtering pressure was changed from 3 to 60 mTorr at 200 watts with 100% $O_2$, the resistivity of the NiO films showed the lowest value of $5.8{\times}10^{-3}$ ${\Omega}cm$ at 3 mTorr, which is close to that of commercial ITO films (${\sim}10^{-4}$ ${\Omega}cm$). As the sputtering pressure increased, the resistivity also increased to 4.67 cm at 60 mTorr. The surface morphology of the NiO films was also checked by Atomic Force Microscopy. It was found that the RMS surface roughness values ranged from 0.6 to 1.5 nm and thtthe dependence on the sputtering parameters was weak.

• 대한금속재료학회지
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• 제50권10호
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• pp.753-761
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• 2012

The reduction behavior of low level oxides such as (T.Fe), (MnO) and ($P_2O_5$) in molten EAF slag was investigated using commercial reductants. In an air atmosphere, the slag volume increased and the reduction rate of the slag was very low due to the oxidation loss of reductants by oxygen in the air. The reduction rate of the slag was also low when a commercial reductant was used alone in an Ar gas atmosphere. The reason is probably because the material transfer through the interface between the slag and reductant is difficult due to the formation of high melting point oxide. When reductants were mixed with burnt lime in order to form low melting point reaction products, the reduction rate of the slag increased up to the range of 45-70%. By using the mixtures of reductants and burnt lime so as to form a low melting point slag at the reaction end, the reduction rate of the slag was improved up to 60-85%.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.61-66
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• 2021

In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al₂O₃-SiO₂(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF₄/O₂/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al₂O₃ and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO₂.