• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.36.2-36.2
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• 2009

In this work, the high power CW Nd:YAG laser has been used for thermal treatment of inkjet printed Ag films-involving eliminating organic additives (dispersant, binder, and organic solvent) of Ag ink and annealing Ag nanoparticles. By optimizing laser parameters, such as laser power and defocusing value, the laser energy can totally be converted to heat energy, which is used to thermal treatment of inkjet printed Ag films. This results in controlling the microstructures and the resistivity of films. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristic of inkjet printed Ag films is compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling image shows that the laser annealed Ag films have large columnar grains and dense structure (void free), while furnace annealed films have tiny grains and exhibit void formation. Due to these microstructural characteristics of laser annealed films, it has better electrical property (low resistivity) compared to furnace annealed samples.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.4
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• pp.211-219
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• 2022

It is known that superplastic materials with ultrafine grains have high elongation mainly due to grain boundary sliding. Therefore, in the present study we examined the influence of grain refinement, caused by a repetitive cold rolling and annealing process, on both superplastic elongation and superplastic deformation mechanism. The cold rolling and annealing process was repetitively applied up to 4 times using Fe-10Mn-3.5Si alloy. High-temperature tensile tests were conducted at 763 K with an initial strain rate of 1 × 10^-3 s^-1 using the specimens. The superplastic elongation increased with the number of the repetitive cold rolling and annealing process; in particular, the 4 cycled specimen exhibited the highest elongation of 372%. The primary deformation mechanism of all specimens was grain boundary sliding between recrystallized α-ferrite and reverted γ-austenite grains. The main reason for the increase in elongation with the number of the repetitive cold rolling and annealing process was the increase in fractions of fine recrystallized α-ferrite and reverted γ-austenite grains, which undergo grain boundary sliding.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.6
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• pp.293-299
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• 2008

In order to provide with fundamental data of the wrought Mg alloy for press forging, the effect of annealing temperature on the microstructure, texture development and tensile properties is studied in a commercial AZ31B Mg alloy sheet. Basal texture i.e. $(0001){\pm}5^{\circ}$[21$\bar{3}$0] is developed in a commercial AZ31B Mg sheet, and the texture is not changed considerably by annealing over $400^{\circ}C{\times}30min$, while (10$\bar{3}$0) component with high intensity can be observed due to abnormal grain growth. When the sheet is tensile-deformed with RD, $45^{\circ}$ and TD directions at room temperature, fracture strains are given by 25.8, 21.4 and 11.9% in the order of RD, $45^{\circ}$ and TD directions, respectively. With increasing annealing temperature up to $450^{\circ}C{\times}30min$, little change in mean grain size can be revealed by annealing below $300^{\circ}C{\times}30min$ but an abnormal grain growth, where some grains become significantly coarser than the rest, occurs by annealing above $400^{\circ}C{\times}30min$. The maximum tensile strain of around 25% is obtained by annealing below $300^{\circ}C{\times}30min$, but it is abruptly decreased to 16% by annealing above $400^{\circ}C{\times}30min$ owing to intergranular fracture of abnormal grown grains.

• Journal of the Korean Society for Heat Treatment
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• v.17 no.2
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• pp.78-86
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• 2004

Effects of the annealing parameters on the formation of ferrites transformed at low temperatures were studied in cold-rolled ultra low carbon steels with niobium and/or chromium. Niobium and chromium were found to be effective in the formation of the low temperature transformation ferrites. The low temperature transformation ferrites more easily formed when both higher annealing temperature and longer annealing time, allowing substitutional alloying elements to distribute between phases, are in combination with faster cooling rate. It was found from EBSD study that the additions of niobium or chromium resulted in the increase in the numbers of high angle grain boundaries and the decrease in those of the low angle grain boundaries in the microstructures. Both granular bainitic ferrite and bainitic ferrite were characterized by the not clearly etched grain boundaries in light microscopy because of the low angle grain boundaries.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.116-116
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• 2007

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.117-117
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• 2007

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.6
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• pp.314-318
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• 2022

Transparent conducting ZnO/Ti/ZnO tri-layer films deposited on glass substrate with DC and RF magnetron sputtering were rapid thermal annealed at 150, 300 and 450℃ for 5 minutes and then effect of annealing temperature on the structural and optoelectronics properties of the films were investigated. The structural properties are strongly related to annealing temperature and the largest grain size is observed in the films annealed at 450℃. The electrical resistivity also decreases as low as 7.7 × 10^-4 Ωcm. The visible transmittance also depends on the annealing temperature. The films annealed at 450℃ show a higher transmittance of 80.6% in this study.

• Journal of information and communication convergence engineering
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• v.3 no.3
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• pp.137-141
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.