• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.65-73
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• 2006

This work presents a 14b 200KS/s $0.87mm^2$ 1.2mW 0.18um CMOS algorithmic A/D converter (ADC) for intelligent sensors control systems, battery-powered system applications simultaneously requiring high resolution, low power, and small area. The proposed algorithmic ADC not using a conventional sample-and-hold amplifier employs efficient switched-bias power-reduction techniques in analog circuits, a clock selective sampling-capacitor switching in the multiplying D/A converter, and ultra low-power on-chip current and voltage references to optimize sampling rate, resolution, power consumption, and chip area. The prototype ADC implemented in a 0.18um 1P6M CMOS process shows a measured DNL and INL of maximum 0.98LSB and 15.72LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 54dB and 69dB, respectively, and a power consumption of 1.2mW at 200KS/s and 1.8V. The occupied active die area is $0.87mm^2$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.8-16
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• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for column-parallel analog-to-digital converter (ADC) array used in a low noise CMOS image sensor. The proposed modulator implements two switched capacitor integrators and a single-bit comparator within only 10-㎛ column-pitch for column-parallel ADC array. Also, peripheral circuits for driving all column modulators include a non-overlapping clock generator and a bias circuit. The proposed delta-sigma modulator has been implemented in a 110-nm CMOS process. It achieves 88.1-dB signal-to-noise-and-distortion ratio (SNDR), 88.6-dB spurious-free dynamic range (SFDR), and 14.3-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 418 for 12-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 970×10 ㎛2 and 248 ㎼, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.355-358
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• 2010

As CMOS technology continues to scale down, signal processing is favorably done in the digital domain, which requires Analog-to-Digital (A/D) Converter to be integrated on-chip. This paper presents a design methodology of 12-bit 1-MS/s Rail-to-Rail fully differential SAR ADC using Deep N-well Switch based on binary search algorithm. Proposed A/D Converter has the following architecture and techniques. Firstly, chip size and power consumption is reduced due to split capacitor array architecture and charge recycling method. Secondly, fully differential architecture is used to reduce noise between the digital part and converters. Finally, to reduce the mismatch effect and noise error, the circuit is designed to be available for Rail-to-Rail input range using simple Deep N-well switch. The A/D Converter fabricated in a TSMC 0.18um 1P6M CMOS technology and has a Signal-to-Noise-and-Distortion-Ratio(SNDR) of 69 dB and Free-Dynamic-Range (SFDR) of 73 dB. The occupied active area is $0.6mm^2$.

• Journal of the Korean Society of Industry Convergence
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• v.9 no.2
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• pp.141-145
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• 2006

In case of sense case manufactured by method of outage capacity, sensitivity is declined by outside effect and method of the photo electricity has a problem in transmission. therefore, packing case of composite sense should be developed to improve such a problem about influence of outside environment and its property evaluation has been performed. Mechanical property and result of analysis & test evaluation of Mat'l on aluminum die-casting(ADC 12type) Mat'l developed are as following. Tensile test piece, No. 4 of KS B 0801, has been applied to mechanical property test of Mat'l and It has been tested by method of metal mat'l tensile test(KS B 0802 : 2003). It can be found that physical property to KS(Korea Standard) is excellent. and homogeneous mechanical property appears. Test of Mat'l analysis has been performed by using OE Spectrometer, according to ASTM E 1251 : 1994 regulation. Consequently, good and homogeneous component contents classified by element to standard, except for Fe, have been obtained with coordination of Fe content as below 1.3% from composition standard of Aluminum Die-casting.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.53-60
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• 2005

This work proposes a 10b 100 MS/s $1.4\;mm^2$ CMOS ADC for low-power multimedia applications. The proposed two-step pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The wide-band SHA employs a gate-bootstrapping circuit to handle both single-ended and differential inputs with 1.2 Vp-p at 10b accuracy while the second-stage flash ADC employs open-loop offset sampling techniques to achieve 6b resolution. A 3-D fully symmetrical layout reduces the capacitor and device mismatch of the first-stage MDAC. The low-noise references are integrated on chip with optional off-chip voltage references. The prototype 10b ADC implemented in a 0.18 um CMOS shows the maximum measured DNL and INL of 0.59 LSB and 0.77 LSB, respectively. The ADC demonstrates the SNDR of 54 dB, the SFDR of 62 dB, and the power dissipation of 56 mW at 100 MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.55-64
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• 2006

This work proposes a calibration-free 14b 70MS/s 0.13um CMOS ADC for high-performance integrated systems such as WLAN and high-definition video systems simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs signal insensitive 3-D fully symmetric layout techniques in two MDACs for high matching accuracy without any calibration. A three-stage pipeline architecture minimizes power consumption and chip area at the target resolution and sampling rate. The input SHA with a controlled trans-conductance ratio of two amplifier stages simultaneously achieves high gain and high phase margin with gate-bootstrapped sampling switches for 14b input accuracy at the Nyquist frequency. A back-end sub-ranging flash ADC with open-loop offset cancellation and interpolation achieves 6b accuracy at 70MS/s. Low-noise current and voltage references are employed on chip with optional off-chip reference voltages. The prototype ADC implemented in a 0.13um CMOS is based on a 0.35um minimum channel length for 2.5V applications. The measured DNL and INL are within 0.65LSB and l.80LSB, respectively. The prototype ADC shows maximum SNDR and SFDR of 66dB and 81dB and a power consumption of 235mW at 70MS/s. The active die area is $3.3mm^2$.

• Journal of Korea Foundry Society
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• v.15 no.4
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• pp.377-387
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• 1995

Partial squeeze die casting is a special die casting process which combines squeeze technique to conventional die casting. The influence of squeeze pressure $(1500-3000kg/cm^2)$ and time-lags(0.5-2.0sec) on defect control, density and microstructure of ADC12 alloy die casts has been studied by appling partial squeeze die casting to air compressure front housing production. Defect free, maximum density of $2.736kg/cm^3$ with sound microstructure of ADC12 alloy die cast has been obtained by partial squeeze die casting technique at the pressure of $2000-2500kg/cm^2$ and time-lags of 1.0-2.0sec.

• Korean Journal of Digital Imaging in Medicine
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• v.14 no.1
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• pp.21-29
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• 2012

The purpose of this study is to evaluate the mutual relations by measuring SNR from T2 weighted image and ADC values on the basis of the stiffness values from liver tissues. This study was conducted that total 37 people(23 of males and 11 of females) were taken the liver MRI examination and average age was $54.5{\pm}12.7$ years old. The equipment was MAGNETOM Skyra 3.0T (SIEMENS, Erlangen, Germany) and 32 channel body-array coil. The examination were conducted with HASTE T2 weighted image by axial plane, Spin-echo EPI (echo planner image) DWI (b-value = 800) and Magnetic resonance elastography. The ROIs (region of interest: 200-300 $mm^2$) were established on the basis of the first axial stiffness image corresponded 95% confidence interval from axial stiffness image and then were measured values. After drawing the grid lines, signals were measured SNR from T2 weighted image and ADC values on the same locations that were analysed other 3 planes respectively. The results were showed correlation (0.057) that were increased to SNR from T2 weighted image by increasing stiffness value that no significant difference statistically p = 0.003. Other results were showed correlations (-0.301) that were decreased to ADC values by increasing stiffness values that no significant difference statistically p = 0.088. In the 3.0T equipment, the results may be error in much the same fashion as the 1.5T from ADC values by evaluation of fibrosis stage. However, Magnetic resonance elastography would be useful method that is used to diagnose exactly liver fibrosis stages in the 3.0T.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.6
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• pp.35-41
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• 2000

This paper describes a merged-capacitor switching (MCS) technique to improve the signal Processing speed and resolution of CMOS analog-to-digital converters (ADCs). The proposed MCS technique improves a sampling rate by reducing the number of capacitors used in conventional pipelined ADCs. The ADC capacitor mismatch can be minimized without additional power consumption, die area, and the loss of sampling rate, when the size of each unit capacitor is increased as much as the number of capacitors reduced by the MCS technique. It is verified that the ADC resolution based on the proposed MCS technique is extended further by employing a conventional commutated feedback-capacitor switching (CFCS) technique.