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A 12b 200KHz 0.52mA $0.47mm^2$ Algorithmic A/D Converter for MEMS Applications  

Kim, Young-Ju (Dept. of Electronic Engineering, Sogang University)
Chae, Hee-Sung (Mtekvision Co., Ltd.)
Koo, Yong-Seo (Dept. of Electronic Engineering, Seokyeong University)
Lim, Shin-Il (Dept. of Electronic Engineering, Seokyeong University)
Lee, Seung-Hoon (Dept. of Electronic Engineering, Sogang University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.43, no.11, 2006 , pp. 48-57 More about this Journal
Abstract
This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.
Keywords
CMOS; ADC;
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