• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2019.05a
• /
• pp.323-324
• /
• 2019

For flash memory devices with Ge-MONOS(metal-Oxide-Nitride-Oxide-Silicon) structures, variations of threshold voltage with programming voltage were investigated. The programming voltage was observed in steps of 1V from 10V to 17V and programmed for 1 second. The threshold voltage from 10V to 14V was about 0.5V, which is not much different from that before programing, and the threshold voltages at 15V, 16V and 17V were 1.25V, 2.01V and 3.84V, respectively, which differed 0.75V, 1.49V and 3.44V from that before programing.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.8
• /
• pp.387-391
• /
• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.133-138
• /
• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Microbiology and Biotechnology Letters
• /
• v.23 no.6
• /
• pp.755-762
• /
• 1995

A phenolic resin industrial wastewater containing about 41,000 mg/l of phenol and 2,800 mg/l of formaldehyde was biologically treated by a mixed culture GE2 immobilized on ceramic beads. This study was carried out with three experimental groups : Control-only added the sludge of papermill wastewater ; GE2 treatment-added GE2 to Control ; Ceramic treatment-applied ceramic carrier to GE2 treatment. When the original wastewater was diluted 80 times with aerated tap-water, influent COD$_{Mn}$ WaS 1,140 mg/l and that of the effluent was in the range of 22-35 mg/l, which was not much different among the experimental groups. However, at 20-times dilution, influent COD$_{Mn}$ was 4,800 mg/l and the effluent COD$_{Mn}$ of Control, GE2 treatment and Ceramic treatment was 179, 128 and 94 mg/l, respectively. COD$_{Mn}$, removal efficiency by Ceramic treatment was the highest, at 98.0%. At this time, the effluent phenol concentration of Control, GE2 treatment and Ceramic treatment was 10.71, 7.93 and 5.60, respectively. As the dilution times decreased, the removal efficiency of COD$_{Mn}$ and phenol did not change much, but COD$_{Mn}$ and phenol concentration of the effluent increased. Consequently, it is likely that the phenolic industrial wastewater containing phenol and formaldehyde can be biologically treated using a GE2 and ceramic carrier and that at 40-times dilution, the effluent completely meets the effluent standards for industrial wastewater treatment plant.

• Journal of the Korean Ceramic Society
• /
• v.40 no.6
• /
• pp.589-593
• /
• 2003

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

• Journal of the Korean Magnetics Society
• /
• v.25 no.2
• /
• pp.31-38
• /
• 2015

Recently, a first-principles study led to a prediction that quaternary Heusler compounds, CoFeCrZ (Z = Ga, Ge) are excellent half-metallic ferromagnets. In this study, we investigate the electronic and the magnetic properties at the (001) surfaces of CoFeCrGa and CoFeCrGe by means of the full-potential linearized augmented plane wave (FLAPW) method within generalized gradient approximation. We considered two types of surface termination: CoFe-terminated and CrZ-terminated surfaces, Z being either Ga or Ge. From the calculated total magnetic moments and the local density of states, we found that half-metallicity is not preserved for all the surfaces. But the calculated atomic density of states showed that CrGa-terminated surface of the CoFeCrGa is almost half-metallic. The magnetic moment of the Co, Fe, or Cr atoms at the surface or subsurface layers in each system had very different values.

• Preventive Nutrition and Food Science
• /
• v.20 no.2
• /
• pp.94-101
• /
• 2015

Grape products have been known to exert greater antioxidant and anti-obesity than anti-hyperglycemic effects in animals and humans. Omija is used as an ingredient in traditional medicine, and it is known to have an anti-hyperglycemic effect. We investigated whether the combined extracts of grape pomace and omija fruit (GE+OE) could reduce fat accumulation in adipose and hepatic tissues and provide beneficial effects against hyperglycemia and insulin resistance in type 2 diabetic mice. C57BL/KsJ-db/db mice were fed either a normal control diet or GE+OE (0.5% grape pomace extract and 0.05% omija fruit extract, w/w) for 7 weeks. GE+OE decreased plasma leptin and resistin levels while increasing adiponectin levels and reducing the total white adipose tissue weight. Furthermore, GE+OE lowered plasma free fatty acid (FFA), triglyceride, and total-cholesterol levels as well as hepatic FFA and cholesterol levels. Hepatic fatty acid synthase and glucose 6-phosphate dehydrogenase activities were decreased in the GE+OE group, whereas hepatic ${\beta}$-oxidation activity was increased. Furthermore, GE+OE supplementation not only reduced hyperglycemia and pancreatic ${\beta}$-cell failure but also lowered blood glycosylated hemoglobin and plasma insulin levels. The homeostasis model assessment of insulin resistance levels was also decreased and the decrease seems to be mediated by the lowered activities of hepatic glucose-6-phosphatase and phosphoenolpyruvate carboxykinases. The present data suggest that GE+OE may have the potential to reduce hyperglycemia, insulin resistance, and obesity in patients with type 2 diabetes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.9
• /
• pp.770-775
• /
• 2002

We present the band lineups of G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructures for the new devices. The energy gap of the bulk G $e_{1-}$x S $n_{x}$ alloy is calculated by taking into account the Vegard's law. The change of the energy gap due to the strain is understood in terms of the deformation Potential theory The valence band offset is obtained from the average bond energy model, where the changes of the band offset due to alloy compositions and strain are included. It is found that Ge/G $e_{1-}$y S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.06 and a straddling one for 0.06$\leq$0.26. Meanwhile, Ge/G $e_{l-y}$ S $n_{y(001)}$ heterostructure has a staggered lineup type for 0$\leq$0.19 and a broken-gap one for 0.19$\leq$0.26. As a result, the various type of the G $e_{1-}$x S $n_{x}$ G $e_{1-}$y S $n_{y(001)}$ heterostructure can be applied for the useful device.evice.

• Journal of the Korean Magnetics Society
• /
• v.23 no.4
• /
• pp.117-121
• /
• 2013

In this study we investigated magnetism and magnetostriction of B2-structured FeX (X = Al, Si, Ni, Ga, Ge, and Sn) using a first-principles method, in order to survey the possibility of developing a transition metal based magnetostriction material. The Full-potential Linearized Augmented Plane Wave method was employed for solving the Kohn-Sham equation within the generalized gradient approximation for exchange-correlation interaction between electrons. FeX alloys are stabilized in ferromagnetic states except for the FeSi and FeGe alloys. Magnetostrcition coefficients of FeX (X = Al, Ni, Ga, and Sn) were calculated to be -5, +6, -84, -522ppm, respectively. It is noteworthy that the magnetostriction coefficient (-522ppm) of FeSn is larger than that (+400ppm) of Gafenol.

• Journal of the Korean Vacuum Society
• /
• v.19 no.6
• /
• pp.489-494
• /
• 2010

Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of $Nb_3Ge$ superconductor film, which were performed from 20 K to 300 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values between 0.598 and 0.594 were decreased while the temperature were decreasing, that indicated the voids into the samples. The temperature dependence came from specific positron trapping rate into the vacancy-type defects. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the Nb3Ge superconductor.