한국정보통신학회:학술대회논문집 (Proceedings of the Korean Institute of Information and Commucation Sciences Conference)

한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
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Ge-MONOS 구조를 가진 플레쉬 메모리 소자의 프로그래밍 전압에 따른 문턱 전압 관찰

Variation of Threshold Voltage by Programming Voltage Change of a Flash Memory Device with Ge-MONOS

  • 오종혁 (한경대학교 전기전자제어공학과) ;
  • 유윤섭 (한경대학교 전기전자제어공학과)
  • Oh, Jong Hyuck (Dept. of Electrical, Electronic and Control Eng., Hankyong National University) ;
  • Yu, Yun Seop (Dept. of Electrical, Electronic and Control Eng., Hankyong National University)
  • 발행 : 2019.05.23
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초록

Ge-MONOS(Metal-Oxide-Nitride-Oxide-Silicon) 구조를 가진 플레쉬 메모리 소자에 대해 프로그래밍 전압에 따른 문턱 전압의 변화를 조사했다. 프로그래밍 전압은 10V, 12V, 15V, 16V, 17V을 인가하였고 1초 동안 프로그래밍을 진행했다. 10V에서 12V까지는 문턱전압은 약 0.5V로 프로그램 전과 크게 다르지 않고, 15V, 16V, 17V에서 문턱전압이 각각 1.25V, 2.01V, 3.84V로 프로그램 전과 0.75V, 1.49V, 3.44V 차이가 발생했다.

For flash memory devices with Ge-MONOS(metal-Oxide-Nitride-Oxide-Silicon) structures, variations of threshold voltage with programming voltage were investigated. The programming voltage was observed in steps of 1V from 10V to 17V and programmed for 1 second. The threshold voltage from 10V to 14V was about 0.5V, which is not much different from that before programing, and the threshold voltages at 15V, 16V and 17V were 1.25V, 2.01V and 3.84V, respectively, which differed 0.75V, 1.49V and 3.44V from that before programing.

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