• 제목/요약/키워드: 0.18 ${\mu}m$ CMOS

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Design and Implementation of the Dual-Mode Type Reliable PLC Modem Chip (듀얼 모드형 고신뢰 PLC 모뎀 칩 설계 및 구현)

  • Lee, Won-Tae;Choi, Sung-Soo;Yun, Sung-Ha;Rhee, Young-Chul
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.3
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    • pp.488-493
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    • 2008
  • This paper represents a dual-mode type transmission technique for a high reliable narrow-band power line communication(PLC) modem, and its design and implementation of a system-on-chip(SoC). The proposed transmission technique is based on a Chirp modulation for the purpose of overcoming time variations of power line channel environments in the narrow-bandwidth of the frequency range of 95-145.5 kHz. The designed modem is fabricated utilizing a mixed 0.18 ${\mu}m$ CMOS technology. Especially, according to the power line channel environments the data transmission rate can be selectively changed into 2.5 kbps and 480 bps. The total hardware complexity of the implemented chip is about 50,000 gates, the power consumption is about 26mW, and the operating frequency is up to 5.12 MHz.

A Study on the Design of Concurrent Dual Band Low Noise Amplifier for Dual Band RFID Reader (이중 대역 RFID 리더에 적용 가능한 Concurrent 이중 대역 저잡음 증폭기 설계 연구)

  • Oh, Jae-Wook;Lim, Tae-Seo;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.4
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    • pp.761-767
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    • 2007
  • In this paper, we deal wih a concurrent dual band low noise amplifier for a Radio Frequency Identification(RFID) reader operating at 912MHz and 2.45GHz. The design of the low noise amplifier is based on the TSMC $0.18{\mu}m$ CMOS technology. The chip size is $1.8mm\times1.8mm$. To improve the noise figure of the circuit, SMD components and a bonding wire inductor are applied to input matching. Simulation results show that the 521 parameter is 11.41dB and 9.98dB at 912MHz and 2.45GHz, respectively The noise figure is also determined to 1.25dB and 3.08dB at the same frequencies with a power consumption of 8.95mW.

A Clock Regenerator using Two 2nd Order Sigma-Delta Modulators for Wide Range of Dividing Ratio

  • Oh, Seung-Wuk;Kim, Sang-Ho;Im, Sang-Soon;Ahn, Yong-Sung;Kang, Jin-Ku
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.1
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    • pp.10-17
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    • 2012
  • This paper presents a clock regenerator using two $2^{nd}$ order ${\sum}-{\Delta}$ (sigma-delta) modulators for wide range of dividing ratio as defined in HDMI standard. The proposed circuit adopts a fractional-N frequency synthesis architecture for PLL-based clock regeneration. By converting the integer and decimal part of the N and CTS values in HDMI format and processing separately at two different ${\sum}-{\Delta}$ modulators, the proposed circuit covers a very wide range of the dividing ratio as HDMI standard. The circuit is fabricated using 0.18 ${\mu}m$ CMOS and shows 13 mW power consumption with an on-chip loop filter implementation.

Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory

  • Choi, Jun-Tae;Kil, Gyu-Hyun;Kim, Kyu-Beom;Song, Yun-Heub
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.1
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    • pp.31-38
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    • 2016
  • A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard $0.18{\mu}m$ CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology.

Polar Transmitter with Differential DSM Phase and Digital PWM Envelope

  • Zhou, Bo;Liu, Shuli
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.313-321
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    • 2014
  • A low-power low-cost polar transmitter for EDGE is designed in $0.18{\mu}m$ CMOS. A differential delta-sigma modulator (DSM) tunes a three-terminal voltage-controlled oscillator (VCO) to perform RF phase modulation, where the VCO tuning curve is digitally pre-compensated for high linearity and the carrier frequency is calibrated by a dual-mode low-power frequency-locked loop (FLL). A digital intermediate-frequency (IF) pulse-width5 modulator (PWM) drives a complementary power-switch followed by an LC filter to achieve envelope modulation with high efficiency. The proposed transmitter with 9mW power dissipation relaxes the time alignment between the phase and envelope modulations, and achieves an error vector magnitude (EVM) of 4% and phase noise of -123dBc/Hz at 400kHz offset frequency.

Design of Low Power OLED Driving Circuit (저소비 전력 OLED 디스플레이 구동 회로 설계)

  • 신홍재;이재선;최성욱;곽계달
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.919-922
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    • 2003
  • This paper presents a novel low power driving circuit for passive matrix organic lighting emitting diodes (OLED) displays. The proposed driving method for a low power OLED driving circuit which reduce large parasitic capacitance in OLED panel only use current driving method, instead of mixed mode driving method which uses voltage pre-charge technique. The driving circuit is implemented to one chip using 0.35${\mu}{\textrm}{m}$ CMOS process with 18V high voltage devices and it is applicable to 96(R.G.B)X64, 65K color OLED displays for mobile phone application. The maximum switching power dissipation of driving power dissipation is 5.7mW and it is 4% of that of the conventional driving circuit.

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A Low-Power Low-Complexity Transmitter for FM-UWB Systems

  • Zhou, Bo;Wang, Jingchao
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.194-201
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    • 2015
  • A frequency modulated ultra-wideband (FM-UWB) transmitter with a high-robust relaxation oscillator for subcarrier generation and a dual-path Ring VCO for RF FM is proposed, featuring low power and low complexity. A prototype 3.65-4.25 GHz FM-UWB transceiver employing the presented transmitter is fabricated in $0.18{\mu}m$ CMOS for short-range wireless data transmission. Experimental results show a bit error rate (BER) of $10^{-6}$ at a data rate of 12.5 kb/s with a communication distance of 60 cm is achieved and the power dissipation of 4.3 mW for the proposed transmitter is observed from a 1.8 V supply.

A Low-Complexity 128-Point Mixed-Radix FFT Processor for MB-OFDM UWB Systems

  • Cho, Sang-In;Kang, Kyu-Min
    • ETRI Journal
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    • v.32 no.1
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    • pp.1-10
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    • 2010
  • In this paper, we present a fast Fourier transform (FFT) processor with four parallel data paths for multiband orthogonal frequency-division multiplexing ultra-wideband systems. The proposed 128-point FFT processor employs both a modified radix-$2^4$ algorithm and a radix-$2^3$ algorithm to significantly reduce the numbers of complex constant multipliers and complex booth multipliers. It also employs substructure-sharing multiplication units instead of constant multipliers to efficiently conduct multiplication operations with only addition and shift operations. The proposed FFT processor is implemented and tested using 0.18 ${\mu}m$ CMOS technology with a supply voltage of 1.8 V. The hardware- efficient 128-point FFT processor with four data streams can support a data processing rate of up to 1 Gsample/s while consuming 112 mW. The implementation results show that the proposed 128-point mixed-radix FFT architecture significantly reduces the hardware cost and power consumption in comparison to existing 128-point FFT architectures.

Fractional-N Frequency Synthesizer with a l-bit High-Order Interpolative ${\sum}{\Delta}$ Modulator for 3G Mobile Phone Application

  • Park, Byeong-Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.1
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    • pp.41-48
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    • 2002
  • This paper presents a 18-mW, 2.5-㎓ fractional-N frequency synthesizer with l-bit $4^{th}$-order interpolative delta-sigma ($\Delta{\;}$\sum$)modulator to suppress fractional spurious tones while reducing in-band phase noise. A fractional-N frequency synthesizer with a quadruple prescaler has been designed and implemented in a $0.5-\mu\textrm{m}$ 15-GHz $f_t$ BiCMOS. Synthesizing 2.1 GHzwith less than 200 Hz resolution, it exhibits an in-band phase noise of less than -85 dBc/Hz at 1 KHz offset frequency with a reference spur of -85 dBc and no fractional spurs. The synthesizer also shows phase noise of -139 dBc/Hz at an offset frequency of 1.2 MHz from a 2.1GHz center frequency.

Design of 1/4-rate Clock and Date Recovery Circuit for High-speed Serial Display Interface (고속 직렬 디스플레이 인터페이스를 위한 1/4-rate 클록 데이터 복원회로 설계)

  • Jung, Ki-Sang;Kim, Kang-Jik;Cho, Seong-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.2
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    • pp.455-458
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    • 2011
  • 4:10 deserializer is proposed to recover 1:10 serial data using 1/4-rate clock. And then, 1/4-rate CDR(Clock and Data Recovery) circuit was designed for SERDES of high-speed serial display interface. The reduction of clock frequency using 1/4-rate clocking helps relax the speed limitation when higher data transfer is demanded. This circuit is composed of 1/4-rate sampler, PEL(Phase Error Logic), Majority Voting, Digital Filter, DPC(Digital to Phase Converter) and 4:10 deserializer. The designed CDR has been designed in a standard $0.18{\mu}m$ 1P6M CMOS technology and the recovered data jitter is 14ps in simulation.