• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.83-92
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• 2004

In this thesis, a modified interpolation-2 6-bit 70MHz ADC is proposed minimizing chip area and power consumption, which includes an error correction circuit. The conventional flash ADC without interpolation comparators suffers from large chip area and more power consumption due to 2n resistors and 2n-1 comparators. Although the flash ADC with interpolation-4 comparators has small area, SNR, INL and DNL are degraded by comparison with the interpolation -2 comparator. We fabricated the proposed 6-bit ADC with interpolation-2 comparators using 0.18${\mu}{\textrm}{m}$ CMOS process. The ADC is composed of 32-resistors, 31 comparators, amplifiers, latches, error correction circuit, thermometer code detector and encoder As the results, power consumption is reduced to 40mW at 3.3V which is saving about 50% than a flash ADC without interpolation comparators, and area is reduced by 20%. SNR is increased by 75% in comparison with that of a flash ADC with interpolation-4 comparators.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.332-336
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• 2014

In this paper, we propose a complementary metal oxide semiconductor (CMOS) binary image sensor with a gate/body-tied (GBT) PMOSFET-type photodetector for high-speed operation. The GBT photodetector of an active pixel sensor (APS) consists of a floating gate ($n^+$-polysilicon) tied to the body (n-well) of the PMOSFET. The p-n junction photodiode that is used in a conventional APS has a good dynamic range but low photosensitivity. On the other hand, a high-gain GBT photodetector has a high level of photosensitivity but a narrow dynamic range. In addition, the pixel size of the GBT photodetector APS is less than that of the conventional photodiode APS because of its use of a PMOSFET-type photodetector, enabling increased image resolution. A CMOS binary image sensor can be designed with simple circuits, as a complex analog to digital converter (ADC) is not required for binary processing. Because of this feature, the binary image sensor has low power consumption and high speed, with the ability to switch back and forth between a binary mode and an analog mode. The proposed CMOS binary image sensor was simulated and designed using a standard CMOS $0.18{\mu}m$ process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.40-49
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• 2008

A Frequency synthesizer for mobile-DTV applications is implemented using $0.18{\mu}m$ CMOS process with 1.8V supply. PMOS transistors are chosen for VCO core to reduce phase noise. The measurement result of VCO frequency range is 800MHz-1.67GHz using switchable inductors, capacitors and varactors. We use varactor bias technique for the improvement of VCO gain linearity, and the number of varactor biasing are minimized as two. VCO gain deterioration is also improved by using the varactor switching technique. The VCO gain and interval of VCO gain are maintained as low and improved using the VCO frequency calibration block. The sigma-delta modulator for fractional divider is designed by the co-simualtion method for accuracy and efficiency improvement. The VCO, PFD, CP and LF are verified by Cadence Spectre, and the sigma-delta modulator is simulated using Matlab Simulink, ModelSim and HSPICE. The power consumption of the frequency synthesizer is 18mW, and the VCO has 52.1% tuning range according to the VCO maximum output frequency. The VCO phase noise is lower than -100dBc/Hz at 1MHz at 1MHz offset for 1GHz, 1.5GHz, and 2GHz output frequencies.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.1
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• pp.51-58
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• 2015

This paper proposes a 10-b SAR ADC. To increase the conversion speed and reduce the power consumption and area, redundant cycles were implemented digitally in a capacitor DAC. The capacitor DAC algorithm was straightforward switching, which included digital error correction steps. A prototype ADC was implemented in CMOS $0.18-{\mu}m$ technology. This structure consumed $140{\mu}W$ and achieved 59.4-dB SNDR at 1.25MS/s under a 1.8-V supply. The figure of merit (FOM) was 140fJ/conversion-step.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.280-285
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• 2004

In this paper, a 9-bit analog-to-digital converter (ADC) is designed for optical disk drive (ODD) servo applications. In the ADC, the circuit technique to increase the operating range of the sample-and-hold amplifier is proposed, which can process the wide-varying input common-mode range. The algorithmic ADC structure is chosen so that the area can be significantly reduced, which is suitable for SoC integration. The ADC is fabricated in a 0.18-$\mu\textrm{m} $ CMOS 1P5M technology. Measurement results of the ADC show that SNDR is 51.5dB for the sampling rate of 6.5MS/s. The power dissipation is 36.3mW for a single supply voltage of 3.3V.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1312-1315
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• 2002

This research describes the design of a fully integrated fractional-N frequency synthesizer intended for the local oscillator in IMT-2000 system using 0.18-$\mu\textrm{m}$ CMOS technology and 1.8-V single power supply. The designed fractional-N synthesizer contains following components. Modified charge pump uses active cascode transistors to achieve the high output impedance. A multi-modulus prescaler has modified ECL-like D flip-flop with additional diode-connected transistors for short transient time and high frequency operation. And phase-frequency detector, integrated passive loop filter, LC-tuned VCO having a tuning range from 1.584 to 2.4 ㎓ at 1.8-V power supply, and higher-order sigma-delta modulator are contained. Finally, designed frequency synthesizer provides 5 ㎒ channel spacing with -122.6 dBc/Hz at 1 ㎒ in the WCDMA band and total output power is 28 mW.

• Journal of Electrical Engineering and Technology
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• v.7 no.1
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• pp.81-85
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• 2012

This paper presents a wideband and low-noise direct conversion front-end receiver supporting VHF and UHFbands simultaneously. The receiver iscomposed of a low-noise amplifier (LNA), a down conversion quadrature mixer, and a frequency divider by 2. The cascode configuration with the resistor feedback is exploited in the LNA to achieve a wide operating bandwidth. Four gainstep modesare employed using a switched resistor bank and a capacitor bank in the signal path to cope with wide dynamic input power range. The verticalbipolar junction transistors are used as the switching elements in the mixer to reduce 1/f noise corner frequency. The proposed front-end receiver fabricated in 0.18 ${\mu}m$ CMOS technology shows very low minimum noise figureof 1.8 dB and third order input intercept pointof -12dBm inthe high-gain mode of 26.5 dBmeasured at 500 MHz.The proposed receiverconsumeslow current of 20 mA from a 1.8 V power supply.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.209-213
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• 2007

The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on the poly and silicon sides, and includes the polysilicon (poly) gate depletion effect. Our compact gate capacitance model exhibits an excellent fit with measured data and parameter values extracted from data are physically acceptable. The data are collected from 0.5, 0.35, 0.25 and $0.18{\mu}m$ CMOS technologies.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.4
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• pp.864-870
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• 2017

This paper describes a Dual Buck Converter with mode control using variable Frequency to Voltage for portable devices requiring wide load current. The inherent problems of PLL compensation and efficiency degradation in light load current that the conventional hysteretic buck converter has faced have been resolved by using the proposed Dual buck converter which include improved PFM Mode not to require compensation. The proposed mode controller can also improve the difficulty of detecting the load change of the mode controller, which is the main circuit of the conventional dual mode buck converter, and the slow mode switching speed. the proposed mode controller has mode switching time of at least 1.5us. The proposed DC-DC buck converter was implemented by using $0.18{\mu}m$ CMOS process and die size was $1.38mm{\times}1.37mm$. The post simulation results with inductor and capacitor including parasitic elements showed that the proposed circuit received the input of 2.7~3.3V and generated output of 1.2V with the output ripple voltage had the PFM mode of 65mV and 16mV at the fixed switching frequency of 2MHz in hysteretic mode under load currents of 1~500mA. The maximum efficiency of the proposed dual-mode buck converter is 95% at 80mA and is more than 85% efficient under load currents of 1~500mA.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.24-31
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• 2008

Power converters are becoming an essential block in modem mobile multimedia application. This paper presents a high performance DC-DC buck converter for mobile applications. Controller of DC-DC buck converter is designed by current-mode control method. An current-mode DC-DC converter is implemented in a standard $0.18{\mu}m$ CMOS process, and the overall die size was $1.2mm^2$. The peak efficiency was 86 % with a switching frequency of $1\sim1.5MHz$ and a maximum load current of 400mA.