• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.109-116
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• 2018

This paper describes an area-efficient design of SHA-256 hash function that is widely used in various security protocols including digital signature, authentication code, key generation. The SHA-256 hash processor includes a padder block for padding and parsing input message, so that it can operate without software for preprocessing. Round function was designed with a 16-bit data-path that processed 64 round computations in 128 clock cycles, resulting in an optimized area per throughput (APT) performance as well as small area implementation. The SHA-256 hash processor was verified by FPGA implementation using Virtex5 device, and it was estimated that the throughput was 337 Mbps at maximum clock frequency of 116 MHz. The synthesis for ASIC implementation using a $0.18-{\mu}m$ CMOS cell library shows that it has 13,251 gate equivalents (GEs) and it can operate up to 200 MHz clock frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.339-344
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• 2017

A novel structure of phase locked loop (PLL) which has small size and fast locking time with Early-late detector, Duty-rate modulator, and Lock status indicator (LSI) is proposed in this paper. The area of loop filter usually occupying the larger portion of the chip is minimized using a single small capacitor. While the conventional PLL with a single capacitor loop filter cannot work stably, the proposed PLL with two charge pumps works stably because the output voltage waveform of the proposed a single capacitor loop filter is the same as the output voltage waveform of the conventional 2nd-order loop filter. The two charge pumps are controlled by the Early-late detector which detects early-late status of UP and DN signals, and Duty-rate modulator which generates a steady duty-rate signal. Fast locking time is achieved using LSI. It has been simulated and proved by HSPICE in a CMOS $0.18{\mu}m$ 1.8V process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.7
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• pp.816-821
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• 2019

A counter-type time-to-digital converter was designed using a dual edge T flip-flop. The time-to-digital converter was designed with a $0.18{\mu}m$ CMOS process at a supply voltage of 1.5 volts. In a typical time-to-digital converter, when the period of the clock is T, a conversion error corresponding to the period of the clock occurs due to the asynchronism between the input signal and the clock. However, the clock of the time-to-digital converter proposed in this paper is generated in synchronization with the start signal which is the input signal. As a result, conversion errors that may occur due to asynchronization of the start signal and the clock do not occur. The flip-flops constituting the counters are composed of dual-edge flip-flops operating at the positive and negative edges of the clock to improve the resolution.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.2
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• pp.39-45
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• 2004

This paper describes the design and implementation of Serial ATA physical layer and performance measurement. It is composed of tranceiver circuit that has the NRZ data stream with +/-250㎷ voltage level and 1.5Gbps data rate, transmission PLL circuit, clock ＆ data recovery circuit, serializer/deserializer circuit and OOB(Out Of Band) generation/detection circuit. We implement the verification of the silicon chip with 0.18${\mu}{\textrm}{m}$ Standard CMOS process. It can be seen that all of the blocks operate with no errors but the data transfer rate is limited to the 1.28Gbps even this should support 1.5Gbps data transfer rate.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.7-10
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• 2007

최근 이동통신을 이용해 다양한 서비스를 제공하기 위하여 멀티 밴드, 멀티 채널의 송수신기를 단일칩화 하기 위한 연구가 활발히 진행되고 있다. CMOS 집적 회로 기술은 가격 경쟁력이 높고 집적도가 높아 멀티 밴드, 멀티 채널 송수신기를 집적화하기에 적합하다. 그러나 0.18 ${\mu}m$ 이하의 채널 길이를 갖는 CMOS 집적 회로는 1.8 V 이하의 낮은 공급 전압을 제공함으로 높은 이득을 갖는 mixer의 구현이 어렵고, mixer에서 발생되는 2, 3차 상호 변조에 의한 왜곡으로 선형성이 문제가 된다. 이런 문제점을 해결하기 위해서 기능성 능동부하를 적용하여 선형성을 향상한 Direct Conversion Down Mixer를 설계 분석 하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.522-529
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• 2013

In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, $0.18{\mu}m$ 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.3
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• pp.255-259
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• 2008

In this paper, a current-mode integrator for low-voltage, low-power analog integrated circuits is presented. Using the proposed current-mode integrator, the baseband analog filter is designed for WCDMA wireless communication. To verify the proposed current-mode integrator circuit, Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS parameter is performed and achieved 44.9dB gain, 15.7MHz unity gain frequency. The described 3rd-order current-mode baseband analog filter is composed of the proposed current-mode integrator, and SFG(Signal Flow Graph) method is used to realize the baseband filter. The simulated results show 2.12MHz cutoff frequency which is suitable for WCDMA baseband block.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.7-18
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• 2002

Single-ended differential RF circuit topologies fully utilizing complementary characteristics of both NMOS and PMOS are proposed, which have inherent advantage of both single-ended and differential circuits. Using this concept, we propose a CCPP (Complementary CMOS parallel push-pull) amplifier which has single-ended input/output with differential amplifying characteristics, leading to more than 30 dB improvement on $IIP_2$. In addition, complementary resistive mixer is also proposed, which provides not only differential IF outputs from single-ended RF input, but much better linearity as well as isolation characteristics. Experimental results using $0.35{\;}\mu\textrm{m}$ CMOS process show that, compared with conventional NMOS resistive mixer, the proposed mixer shows 15 dB better LO-to-IF isolation, 4.6 dB better $IIP_2$, and 4.5 dB better $IIP_3$performances.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.3097-3099
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• 2000

In this paper, we design PLL for a low jitter and fast locking time that is used a new simple precharged CMOS phase frequency detector(PFD). The proposed PFD has a simple structure with using only 18 transistors. Futhermore, the PFD has a dead zone 25ps in the phase characteristic which is important in low jitter applications. The phase and frequency error detection range is not limited as the case of other precharge type PFDs. the simulation results base on a third order PLL are presented to verify the lock in process with the proposed PFD. the PLL using the new PED is designed using 0.25${\mu}m$ CMOS technology with 2.5V supply voltage.

• Journal of electromagnetic engineering and science
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• v.4 no.2
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• pp.56-62
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• 2004

We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${\mu}{\textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.