• Title/Summary/Keyword: 빔 집속

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Verification of Radiation and Beam-Steering Characteristics for Planar-Phased Array Radars Using Near-Field Beam Focusing (근전계 빔 집속 시험 기법을 활용한 평면위상배열레이다 시스템 복사 및 빔 조향 특성 검증)

  • Kim, Young-Wan;Lee, Jaemin;Jung, Chae-Hyun;Park, Jongkuk;Lee, Yuri;Kim, Jong-Phil;Kim, Sunju
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.2
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    • pp.160-168
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    • 2019
  • In this study, we propose a verification method for a planar-phased array radar system using a near-field beam focusing(NFBF) test method. We then confirmed the validity of the results. The proposed method can be used to verify a radar system in the near-field range of twice the antenna aperture size, and this is done in the same manner as the field system performance test conducted in a non-outdoor electromagnetic anechoic chamber. The test configuration and procedure for verifying the NFBF using near-field energies were reviewed. In addition, the phase compensation values of additional individual channels were quantified through mathematical verification of the beam-steered NFBF test. Based on a theoretical verification, the actual NFBF test was performed and the validity of the test method was confirmed through comparison with ideal analytical results.

Analysis of Ultrasound Synthetic Transmit Focusing Using Plane Waves (평면파를 이용한 초음파 합성 송신 집속 기법의 해석)

  • Lee, Jong Pil;Song, Jae Hee;Song, Tai-Kyong
    • The Journal of the Acoustical Society of Korea
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    • v.33 no.3
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    • pp.200-209
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    • 2014
  • In this paper, we present a general model for synthetic transmit focusing method using plane waves (STF-PW) of which the properties are investigated through mathematical analysis and compared with those of the conventional focusing method. The analysis results show that STF-PW produces non-diffracting beams in the sense that their main lobe widths do not change with depth. We also present a method for synthesis of plane waves to obtain a desired main lobe width while preventing grating lobe generation and a method for broadening the region over which the non-diffracting property is maintained. The proposed model and analysis results were validated through computer simulations.

Alignment Method of Ion Beam Axis in Focused Ion Beam System (집속이온빔장치에서의 이온빔축 얼라인먼트)

  • Park, Cheol-Woo;Lee, Jong-Hang;Kang, Seung-Oun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.30 no.9 s.252
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    • pp.1166-1172
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    • 2006
  • This paper describes an alignment method of the ion column which is used for a focused-ion-beam machining system. The alignment parameters for mechanical and electrical components are introduced, and also sample images are used for evaluating the experiments. The experimental results show that geometrical positions of mechanical components have an influence on the quality of emitted ion beam. In addition, we can successfully align the traveling axis of ions by using mechanical and electrical methods.

Damage of Minerals in the Preparation of Thin Slice Using Focused Ion Beam for Transmission Electron Microscopy (투과전자현미경분석용 박편 제작 시 집속이온빔에 의한 광물 손상)

  • Jeong, Gi Young
    • Journal of the Mineralogical Society of Korea
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    • v.28 no.4
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    • pp.293-297
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    • 2015
  • Focused ion beam (FIB) technique is widely used in the precise preparation of thin slices for the transmission electron microscopic (TEM) observation of target area of the minerals and geological materials. However, structural damages and artifacts by the Ga ion beam as well as electron beam damage are major difficulties in the TEM analyses. TEM analyses of the mineral samples showed the amorphization of quartz and feldspar, curtain effect, and Ga contamination, particularly near the grain edges and relatively thin regions. Although the ion beam damage could be much reduced by the improved procedures including the adjustment of the acceleration voltage and current, the ion beam damage and contamination are likely inevitable, thus requiring careful interpretation of the micro-structural and micro-chemical features observed by TEM analyses.

FIB Machining Characteristic Analysis according to $Ga^+$ Ion Beam Current (집속이온빔의 전류변화에 따른 미세가공 특성분석)

  • Kang, Eun-Goo;Choi, Byeong-Yeol;Hong, Won-Pyo;Lee, Seok-Woo;Choi, Hon-Zong
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.15 no.6
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    • pp.58-63
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    • 2006
  • FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\Phi}10nm$ and smaller is available. Since general FIB uses very short wavelength and extremely high energy, it can directly make a micro structure less than $1{\mu}m$. As a result, FIB has been probability in manufacturing high performance micro devices and high precision micro structures. Until now, FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis, IC error correction, etc. In this paper FIB-Sputtering and FIB-CVD characteristic analysis were carried out according to $Ga^+$ ion beam current that is very important parameter for minimizing the pattern size and maximizing the yield. Also, for FIB-Sputtering burr caused by redeposition of the substrate characteristic analysis was carried out.

Development of Ion Beam Monte Carlo Simulation and Analysis of Focused Ion Beam Processing (이온빔 몬테 카를로 시물레이션 프로그램 개발 및 집속 이온빔 공정 해석)

  • Kim, Heung-Bae
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.4
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    • pp.479-486
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    • 2012
  • Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.