• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.217-220
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• 2005

이 논문에서는 새로운 약신호 검파 기법을 얻어, 그 기법과 국소 최적 검파 기법을 바탕으로 순차 검파 방식을 이끌어낸다. 먼저, 새로운 약신호 검파 기법을 제안하고, 흥미로운 문턱값 성질을 몇가지 밝힌다. 제안한 순차 검파 방식에서 쓰는 두 문턱값은 어떤 단계에 이르면 크기가 바뀌어, 결정을 무한히 미룰 때도 있는 순차 확률비 검파 방식이 지닌 문제점을 풀어준다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.682-684
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics over the temperature range of 300K and 77K. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.474-477
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics over the temperature range or 300K and 77K. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.773-776
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• 2003

In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.53-62
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• 1999

Center of photon mass(CPM), defined as the center of axial photon distribution, is proposed as a unified design parameter, which contains information about both threshold gain and nonuniformity of axial photon distribution in DFB lasers with low and high-reflection facets. The CPM is inversely proportional to threshold gain and is 0.5 when axial photon distribution is the most uniform. Therefore, a general rule of single-frequency leser design is that main mode CPM should be around 0.5 for-uniform axial photon distribution and side mode CPM should be minimized to maximize the threshold gain difference.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1840-1844
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• 2008

In this paper, the influence of channel doping concentration, which the most important factor is as double gate MOSFET is fabricated, on transport characteristics has been analyzed in the subthreshold region. The analytical model is used to derive transport model based on Poisson equation. The thermionic omission and tunneling current to have an influence on subthreshold current conduction are analyzed, and the relationship of doping concentration and subthreshold swings of this paper are compared with those of Medici two dimensional simulation, to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and the transport characteristics have been considered according to the dimensional parameters of double gate MOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.885-890
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• 2014

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.698-701
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• 2013

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.