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Electrical characteristics analysis of SiGe pMOSFET for High frequency  

정학기 (군산대학교 전자정보공학부)
고석웅 (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.3, 2003 , pp. 474-477 More about this Journal
Abstract
In this paper, we have designed the p-type SiGe MOSFET and analyzed the electrical characteristics over the temperature range or 300K and 77K. When the gate voltage is biased to -1.5V, the threshold voltage values are -0.97V and -1.15V at room temperature and 77K, respectively. We know that the operating characteristics of SiGe MOSFET is superior to the basic Si MOSFET which the threshold voltage is -1.36V.
Keywords
SiGe PMOSFET; electrical characteristics; room temperature; 77K;
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