• Title/Summary/Keyword: 기생 소자

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Optimized Design of T-Shaped Microstrip Antenna with Various Dimensions (T형 마이크로스트립 안테나의 면적 비에 따른 최적 설계)

  • Kim, Jin-Bok;Lee, Joong-Geun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.5
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    • pp.53-59
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    • 2010
  • There are various types of antenna fed method; coaxial probe, coupling, parasitic elements, and impedance matching. In this paper, the fed method of the proposed antenna is microstrip line type. The high frequency structure simulator (HFSS) is used to analyze the characteristics of the T-shaped microstrip antenna with various patch dimensions. In comparison with the basic microstrip antenna, this proposed T-shaped microstrip antenna with 40.38 % of patch dimensions has the optimum characteristics of resonant frequency, return loss, and radiation pattern at 2.0 GHz band.

Analysis of the Rectangular Microstrip Antenna with Parasitic Elements Considering the Mutual Coupling Characteristics (상호결합 특성이 고려된 기생소자를 갖는 구형 마이크로스트립 안테나 해석)

  • Son, Geon-Ho;Yun, Li-Ho;Hong, Jae-Pyo;Cho, Young-Ki;Son, Hyon
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.12
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    • pp.12-17
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    • 1991
  • In this paper, E-plane gap-coupled rectangular microstrip antennas with parasitic elements are analyzed. The mutual coupling between the radiating edges is represented as the voltage-dependent current source. The gap coupling between the patch and parasitic element is characterized with the REC(Radiating Edges-Coupling) model, and the conventional transmission line model is used to obtain the equivalent circuit of the antenna. The return loss of the rectangular microstrip antennas with short-and open-circuit parasitic elements are calculated and compared with the measured values. The theoretical values including the mutual coupling are more in agreement with the measured values than the calculated values without the mutual coupling.

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A Study on the Integration of Zigzag Dipole Antennas and Improvement of Its Resonance Characteristics (지그재그 다이폴 안테나의 집적화와 공진 특성 개선에 관한 연구)

  • Jeon Hoo-Dong;Lee Young-Soon;Park Eui-Joon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.4 s.346
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    • pp.44-51
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    • 2006
  • In this paper, the resonance characteristics of zigzag wire dipole antennas are first analyzed by the method of moment(MOM) for shortening the space occupation length of straight wire dipole antenna Considering the shortening effect the integrated zigzag dipole antennas with the simplified microstrip feed are designed. Since the integration gives rise to discontinuities due to antenna line width with abrupt bend angles, the compensation by the chamfer is applied. Futhermore the integrated parasitic zigzag lines are properly attached to both sides of substrate for compensation of the effect of the dielectric substrate, hence improving the resonance characteristic. The design results at UHF and ISM band are verified with experiments.

Study of High Efficiency H-B Converter Using Synchronous Rectifier (동기정류기를 이용한 고효율 하프브리지 컨버터에 관한 연구)

  • Go, S.M.;Kim, Y.;Baek, S.H.;Maeng, I.J.;Kim, P.S.;Yoon, S.H.
    • Proceedings of the KIEE Conference
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    • 1998.07f
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    • pp.1977-1980
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    • 1998
  • 본 논문에서는 출력단에 동기정류기를 사용하는 영전압 스위칭 방식의 고효율 하프 브리지(H-B)컨버터에 대해 다루고자 한다. 컨버터 손실의 대부분은 출력단 정류기 부분, 주 스위치, 트랜스 등에서 발생되며, 이중 출력단 정류기에 쇼트키 다이오드를 이용하는 경우 쇼트키 다이오드의 on-drop에 의한 손실이 적지 않게 된다. 따라서 이를 감소시키기 위해 쇼트키 다이오드를 MOSFET동기 정류기로 대치하고자 한다. 동기 정류기 방식에 이용되는 MOSFET에는 도통손실이 있으나 이는 쇼트키 다이오드의 on-drop에 의한 손실에 비해 매우 작으며, 특히 MOSFET의 기생 성분을 이용하여 영전압을 구현함으로써 MOSFET의 도통 손실을 현저히 감소시킬 수 있게 된다. 또한 H-B 컨버터의 경우 주 스위치에 전원전압과 동일한 크기의 전압이 인가되므로 내압이 작은 소자의 이용이 가능하게 되며, 이와 같이 함으로써 사용 부품 수의 감소, 내압이 낮은 주 스위치의 사용, 더 나아가 효율이 높은 고효율 컨버터를 구현 할 수 있다.

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HBM ESD Tester for On-wafer Test using Flyback Method (Flyback 방식을 이용한 on-wafer용 HBM ESD 테스터 구현)

  • 박창근;염기수
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.7
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    • pp.1079-1083
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    • 2002
  • We made ESD tester to measure ESD threshold voltage of semiconductor devices. The HBM ESD test is the most popular method to measure the ESD threshold voltage of MMSIC. We use flyback method which is one of the DC-DC converter to get high ESD voltage. With flvback method, we can isolate the 1ow voltage part from the high voltage part of HBM ESD tester. We use an air gap of the relay which is used for switch to satisfy the rise time of ESD standard(MIL-STD). As a result, with the flyback method and the air gap of relay, we can make ESD tester whose parasitic components are minimized.

a-Si:H in TFT-LCD that integrated Gate driver circuit : Instability effect by temperature (Gate 구동 회로를 집적한 TFT-LCD에서 a-Si:H TFT의 온도에 따른 Instability 영향)

  • Lee, Bum-Suk;Yi, Jun-Sin
    • Proceedings of the KIEE Conference
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    • 2006.07d
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    • pp.2061-2062
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    • 2006
  • a-Si(amorphous silicon) TFT(thin film transistor)는 TFT-LCD(liquid crystal display)의 화소 스위칭(switching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 ASG(amorphous silicon gate) 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압(Vth)의 이동이다. 특히 고온에서는 문턱 전압의(Vth) 이동이 가속화 되고, Ioff current가 증가 하게 되고, 저온($0^{\circ}C$)에서는 전류 구동능력이 상온($25^{\circ}C$) 상태에서 같은 게이트 전압(Vg)에 대해서 50% 수준으로 감소하게 된다. 특히 ASG 회로는 여러 개의 TFT로 구성되는데, 각각의 TFT가 고온에서 Vth shift 값이 다르게 되어 설계시 예상하지 못 한 고온에서의 화면 무너짐 현상 즉 고온 노이즈 불량이 발생 할 수 있다. 고온 노이즈 불량은 고온에서의 각 TFT의 문턱전압 및 $I_D-V_G$ 특성을 측정한 결과 고온 노이즈 불량에 영향을 주는 인자가 TFT의 width와 기생 capacitor비 hold TFT width가 영향을 주는 것으로 실험 및 시뮬레이션 결과 확인이 되었다. 발생 mechanism은 ASG 회로는 AC 구동을 하기 때문에 Voff 전위에 ripple이 발생 되는데 특히 고온에서 ripple이 크게 증가 하여 출력 signal에 영향을 주어 불량이 발생하는 것을 규명하였다.

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Method for High-Frequency Modeling of Common-Mode Choke (공통모드 초크의 간단한 고주파 모델링 기법)

  • Jung, Hyeonjong;Yoon, Seok;Kim, Yuseon;Bae, Seok;Lim, Yeongseog
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.12
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    • pp.964-973
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    • 2017
  • In this paper, we analyze the effects of parasitic components of common-mode choke on the common mode and differential mode in a wide band, and we propose a simple method for high-frequency modeling. Common mode and differential mode 2-port networks were configured and the S-parameters in each mode were measured using a network analyzer. Equivalent circuit elements were extracted from the measured results to model a high-frequency equivalent circuit, and the validity was verified by comparing the measured S-parameters with the simulation results.

Equivalent Circuit Model Parameter Extraction for Packaged Bipolar Transistors (패키지된 바이폴라 트랜지스터의 등가회로 모델 파라미터 추출)

  • Lee Seonghearn
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.12
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    • pp.21-26
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    • 2004
  • In this paper, a direct method is developed to extact RF equivalent circuit of a packaged BJT without optimization. First, parasitic components of plastic package are removed from measured S-parameters using open and short package patterns. Using package do-embedded S-parameters, a direct and simple method is proposed to extract bonding wire inductance and chip pad capacitance between package lead and chip pad. The small-signal model parameters of internal BJT are next determined by Z and Y-parameter formula derived from RF equivalent circuit. The modeled S-parameters of packaged BJT agree well with measured ones, verifying the accuracy of this new extraction method.

Design & Fabrication of Audio Preamplifier Using Thick film Hybrid Technology (혼성집적회로 기술에 의한 음악 전단증폭기의 설계와 제작)

  • 정선호;정헌생
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.8 no.5
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    • pp.10-19
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    • 1971
  • Problems and technologies involved in integrating an audio preamplifier in terms of thick film technology has been discussed in detail. In particular, an attempt has been made to find methods for functional trimming of the amplifer by employing computer analysis. Among seven resistors integrated on a alumina substrate, only one resistor was found to be very sensitive to over all performance of the preamplifier. By trimming this resistor to its freguency charcteristic reguirements, it was possible to cut down trimming labor by one seventh. Besides, problems concerning resistor conductor contacts, crossover parasitic capacitance and the relations between noise per(ormance and trimming method are discussed in detail.

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Design of Dual Band Log-Periodic Dipole Antennas for the Cellular/IMT-2000 Band (Cellular/IMT-2000 공용 이중밴드 대수주기 다이폴 안테나 설계)

  • 최학근;오종대;김명철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.11
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    • pp.1216-1224
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    • 2003
  • In this paper Dual Band Log-Periodic Dipole Antenna(DLPDA), which can be used at the Cellular/IMT-2000 band, is proposed. The proposed antenna is composed of 2 of Log-Periodic Dipole Antenna(LPDA) and parasitic elements. To investigate the reliability of the proposed antenna, DLPDA is designed at the cellular/IMT-2000 band and analyzed by using the method of moment, Numerical results are compared with measured results. It is shown that although the antenna length is 70 cm, its radiation characteristics satisfied the design goals of gain, VSWR and beamwidth at the Cellular/IMT-2000 band. From these results, the proposed DLPDA is confirmed as the dual band antenna which can be used at the cellular/IMT-2000 band.