• Proceedings of the Korea Contents Association Conference
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• 2007.11a
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• pp.837-841
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• 2007

최근 영상을 중심으로 여러 형태의 정보를 결합하여 저장하거나 전송하는 멀티미디어가 많은 관심을 받고 있다. 현재 카메라와 관련된 동영상 캡처기술은 Motion JPEG이 주류를 이루고 있으며, 텔레비전, DMB 등의 방송 분야 및 DVD, VCR 분야에서는 MPEG-2, MPEG-4, H.264 및 WMV9 등의 압축 코덱이 채용되고 사용되고 있다. 그러나 이러한 다양한 영상 표준방식은 디코딩시 호환성 문제가 발생하게 되고 이에 따라 통합 코덱 연구가 필요하다. 이에 본 논문은 일반적 스텝 양자화외에 데드존 양자화를 사용하고 "$4{\times}4$", "$4{\times}8$", "$8{\times}4$", "$8{\times}8$"의 다양한 블록크기의 변환을 지원하는 VC-1을 기반으로 한 ITIQ C언어를 통해 시뮬레이션하고 최적화된 결과를 VHDL로 구현하여 향후 통합코덱 연구에 응용 가능하도록 연구 및 분석평가 하였다. 설계결과 4:2:0의 YCbCr포맷의 최초 $16{\times}16$블록을 복원하는데 483~510클록이 소요되었고 Xilinx XCVPC100 FF1696-6 환경에서 93,128개의 게이트 수와 71.469MHz의 동작속도를 나타내었다. 이는 640*480 크기의 컬러영상을 디코딩 하는데 프레임 당 최대 0.0074초가 소요됨을 의미하며 초당 30프레임의 영상에서도 0.222초면 디코딩이 가능한 결과이다.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2061-2062
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• 2006

a-Si(amorphous silicon) TFT(thin film transistor)는 TFT-LCD(liquid crystal display)의 화소 스위칭(switching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 ASG(amorphous silicon gate) 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압(Vth)의 이동이다. 특히 고온에서는 문턱 전압의(Vth) 이동이 가속화 되고, Ioff current가 증가 하게 되고, 저온($0^{\circ}C$)에서는 전류 구동능력이 상온($25^{\circ}C$) 상태에서 같은 게이트 전압(Vg)에 대해서 50% 수준으로 감소하게 된다. 특히 ASG 회로는 여러 개의 TFT로 구성되는데, 각각의 TFT가 고온에서 Vth shift 값이 다르게 되어 설계시 예상하지 못 한 고온에서의 화면 무너짐 현상 즉 고온 노이즈 불량이 발생 할 수 있다. 고온 노이즈 불량은 고온에서의 각 TFT의 문턱전압 및 $I_D-V_G$ 특성을 측정한 결과 고온 노이즈 불량에 영향을 주는 인자가 TFT의 width와 기생 capacitor비 hold TFT width가 영향을 주는 것으로 실험 및 시뮬레이션 결과 확인이 되었다. 발생 mechanism은 ASG 회로는 AC 구동을 하기 때문에 Voff 전위에 ripple이 발생 되는데 특히 고온에서 ripple이 크게 증가 하여 출력 signal에 영향을 주어 불량이 발생하는 것을 규명하였다.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.6
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• pp.488-495
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• 2009

This paper proposes a new AC/DC RPPB(Resonant Piezo-Powered Boost) converter for energy harvesting using a piezoelectric device which converts mechanical vibration energy to electrical energy. The AC/DC RPPB converter can operate with only the harvested energy without an additional power conversion circuit for switching circuit and transfer energy to a load of which the voltage is higher than piezoelectric voltage. With the review of published topologies of the converter for energy harvesting, the operation principle of the AC/DC RPPB converter, and the results of PSPICE simulation and experiment are presented to prove the feasibility of the new converter for the energy harvesting.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.12
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• pp.31-39
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• 1998

This paper presents the design and implementation of a new multimedia fixed-point DSP (MDSP) core for portable multimedia applications. The MDSP instruction set is designed through the analysis of multimedia algorithms and DSP instruction sets. The MDSP architecture employs parallel processing techniques, such as SIMD and vector processing as well as DSP techniques. The instruction set can handle various data formats and MDSP can perform two MAC operations in parallel. The switching network and packing network can increase the performance by overlapping data rearrangement cycles with computation cycles. We have designed Verilog HDL models and the 0.6 $\mu\textrm{m}$ Samsung KG75000 SOG library is used. The total gate count is 68,831 and the clock frequency is 30 MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.96-104
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• 2000

This paper presents a simple method to estimate short-circuit power dissipation for static CMOS logic circuits. Short-circuit current expression is derived by accurately interpolating peak points of actual current curves which is influenced by the gate-to-drain coupling capacitance. It is shown through simulations that the proposed technique yields better accuracy than previous methods when signal transition time and/or load capacitance decreases, which is a characteristic of the present technological evolution. The proposed analytical expressions can be easily applied in such applications as power estimation even when the current expression is changed.

• Journal of IKEEE
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• v.24 no.2
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• pp.598-603
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• 2020

In this paper present a Low Drop-Out(LDO) regulator that improves load transient characteristics due to the push-pull pass transistor structure is proposed. Improved load over the existing LDO regulator by improving the overshoot and undershoot entering the voltage line by adding the proposed push-pull circuit between the output stage of the error amplifier inside the LDO regulator and the gate stage of the pass transistor and the push-pull circuit at the output stage. It has a delta voltage value of transient characteristics. The proposed LDO structure was analyzed in Samsung 0.13um process using Cadence's Virtuoso, Spectre simulator.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.11
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• pp.55-63
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• 1999

A new CMOS If Package design methodology is presented, analyzing the electrical characteristics of a package and its effects on the CMOS digital circuits. An analytical investigation of the package noise effects due to the simultaneous switching of the gates within a chip, i.e., simultaneous switching noise (SSN) is performed. Then not only are novel design formula to meet electrical constraints of the Package derived, but also package design methodology based on the formula is proposed. Further, in order to demonstrate the Proposed design methodology, the design results are compared with HSPICE (a general purpose circuit simulator) simulation for $0.3\mu\textrm{m}$-based CMOS circuits. According to the proposed design procedures, it is shown that the results have excellent agreements with those of HSPICE simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.7-12
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• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• Journal of IKEEE
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• v.4 no.2 s.7
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• pp.241-248
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• 2000

A linear power amplifier is particular emphasized on the CDMA system using a linear modulation scheme, because intermodulation distortion which cause adjacent channel interference and co channel interference is mostly generated in a nonlinear power amplifier. In this paper, a new type of linearization technique proposed. It is presented that balanced MESFET predistortion linearizer added. Experimental result are present for Korea PCS(Personal Communication Service) frequency band. The implemented linearizer is applied to a 30dBm class A power amplifier for simulation Performance. The predistortion linearizer improves the 1dB compression point of the HPA about 2dBm, and intermoudulation distortion about 12.5dBc.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.777-779
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• 2003

In this paper, we have investigated Characteristics of C-V for Double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated characteristics of C-V and main gate voltage is changed from -5V to ＋5V. Also we have investigated characteristics of C-V for DG MOSFET when the side gate length is changed from 40nm to 90nm. As the side gate length is reduced, the transconductance is increased and the capacitance is reduced. When the side gate voltage is 3V, we know that C-V curves are bending at near the main gate voltage of 1.8V. We have simulated using ISE-TCAD tool for characteristics analysis of device.