• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.16-19
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• 2014

Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.73-76
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• 2014

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1219-1224
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• 2006

This study investigates the effect of $NH_3$ gas upon the growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition. It is considered that the CNT synthesis occurs mainly through two steps, clustering of catalyst particles and subsequent growth of CNTs. We thus introduced $NH_3$ during either an annealing or growth step. When $NH_3$ was fed only during annealing, CNTs grew longer and more highly crystalline with diameters unchanged. An addition of $NH_3$ during growth, however, resulted in shorter CNTs with lower crystallinity while increased their diameters. Vertically aligned, highly populated CNT samples showed poor field emission characteristics, leading us to apply post-treatments onto the CNT surface. The CNTs were treated by adhesive tapes or etched back by dc plasma of $N_2$ to reduce the population density and the radius of curvatures of CNTs. We discuss the morphological changes of CNTs and their field emission properties upon surface treatments.

• 한국재료학회지
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• 제3권4호
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• pp.403-409
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• 1993

본 논문에서는 Si(111)에 대한 건식산화와 어닐링에서 결함의 억제 또는 제거에 $NH_3$가 효과적임을 밝혔다. 산화방식은 건식산화(dry $O_2$ oxidation)및 $NH_3$산화($NH_3$ added in dry $O_2$oxidation)를 택하였고 $N_2$및 $NH_3N_2$분위기에서 어닐링 효과를 평가하였다. 건식산화에서는 발생되는 결함이 성장시간에 따라서 길이가 길어지며, $NH_3$산화에서는 결함이 발견되지 않았다. 또한 초기산화를 $NH_3$산화로 하고서 건식산화를 하였을 때 계면에서의 결함을 제거하는 효과가 있다. 건식산화 또는 $NH_3$산화를 한 후 이들 시료에 대하여 7.5% $NH_3N_2$분위로 어닐링하면OSF의 게터링(gettering)효과가 있었다. $NH_3$산화방식에서 7.5%$NH_3N_3$분위기로 어닐링했을때가 건식산화방식에 비하여 OSF의 길이가 20%정도 감소하였다. OSF의 모양은 pit형으로 (111)면에 대하여 (011)면 쪽으로 게터링이 일어났으며<110>방향으로 식각되는 성질이 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.57-58
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• 1992

The NH$_3$oxidation, which forms thermal oxide layer on silicon substrate with pure $O_2$gas added with small amounts of NH$_3$gas, has good interface sates due to activated gettering effect during oxidation. The superiority of interfae state in NH$_3$ oxidation method is not affected by preprocess but by gettering during oxidation. The dramatec reduction fo interface state is conformed with observing OSF when NH$_3$ oxide is annealed in NH$_3$ atmosphere.

• 센서학회지
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• 제13권6호
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• pp.424-429
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• 2004

$Cr_{2}O_{3}$ thick films were fabricated by screen printing method on alumina substrates and annealed at $700^{\circ}C$, $800^{\circ}C$, and $900^{\circ}C$ in air, respectively. Structural properties examined by XRD and SEM showed (116) dominant $Cr_{2}O_{3}$ peak and increased grain sizes with the annealing. The resistance of the films decreased with increasing the annealing temperature. Gas sensing characteristics to $NH_{3}$, CO, $C_{4}H_{10}$, and NO gases showed sensitivity only to $NH_{3}$ gas. $Cr_{2}O_{3}$ thick films annealed at $700^{\circ}C$ had the sensitivity of about 15 % for 100 ppm $NH_{3}$ gas at the working temperature of $300^{\circ}C$. The thick films had good selectivity to the $NH_{3}$ gas. The response time to $NH_{3}$ gas was about 10 seconds.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.123-123
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• 2002

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.116-116
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• 2007

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

• 전자공학회논문지A
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• 제30A권1호
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• pp.23-30
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• 1993

Hydrogenation on the top gate and bottom gate Poly-Si TET's was performed by using Nh$_{3}$ plasma and annealing SiN film deposited by PECVD and then the electric characteristics on Poly-Si TET were investigated. As the time of NA$_{3}$ plasma treatment increaes, on/off current ratio gradually increases and the swing value decreases. The trap densities of graim boundaries in Poly-Si decrease very much during the inital 20min of hydrogenation time, and the decreasing scale becomes smaller after 20 min. The electric characteristics of the top gate TFT are better than those of the bottom gate TFT, it is considered due to the defects at the interface between the Poly-Si and the underlayer, SiO$_{2}$. After NH$_{3}$ plasma was treated for 2 hours for the top gate TFT, as the aging time atroon temperature increases on current was not scacely changed and off current decreases more than 1 order. Gate current density recovers to original value after the aging treatment for 8 days and then the electric characteristics are finally improved. It is suggested that the degraded characteristics of gate oxide are improved, from the variations of C-V characteristics with aging time. For the hydrogenation of isothermal and isochronal annealing SiN film deposited by PECVD, the characteristics of Poly-Si TFT are improved with increasing annealing temperature and are not largely changed with increasing annealing time. This results is good in agreement with the hydrogen reduction in Sin film as variations of annealing temperature and time.