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http://dx.doi.org/10.4313/JKEM.2006.19.7.611

Formation of N Doped, p-type ZnO Films by Post-annealing in NH3 Ambient  

Jung, Eun-Soo (한국해양대학교 반도체물리)
Kim, Hong-Seung (한국해양대학교 반도체물리)
Cho, Hyung-Kun (성균관대학교 신소재공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.19, no.7, 2006 , pp. 611-617 More about this Journal
Abstract
We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.
Keywords
p-ZnO; Post-annealing; $NH_3$; N doping;
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