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http://dx.doi.org/10.4313/TEEM.2014.15.2.73

Effect of Annealing Atmosphere on the La2O3 Nanocrystallite Based Charge Trap Memory  

Tang, Zhenjie (College of Physics and Electronic Engineering, Anyang Normal University)
Zhao, Dongqiu (College of Physics and Electronic Engineering, Anyang Normal University)
Hu, Huiping (College of Physics and Electronic Engineering, Anyang Normal University)
Li, Rong (School of Mathematics and Statistics, Anyang Normal University)
Yin, Jiang (Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University)
Publication Information
Transactions on Electrical and Electronic Materials / v.15, no.2, 2014 , pp. 73-76 More about this Journal
Abstract
$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.
Keywords
Annealing atmosphere; $La_2O_3$ nanocrystallite; Memory;
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