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http://dx.doi.org/10.4313/TEEM.2014.15.1.16

Improved Memory Characteristics by NH3 Post Annealing for ZrO2 Based Charge Trapping Nonvolatile Memory  

Tang, Zhenjie (College of Physics and Electronic Engineering, Anyang Normal University)
Zhao, Dongqiu (College of Physics and Electronic Engineering, Anyang Normal University)
Li, Rong (School of Mathematics and Statistics, Anyang Normal University)
Zhu, Xinhua (National Laboratory of Solid State Microstructures, Nanjing University)
Publication Information
Transactions on Electrical and Electronic Materials / v.15, no.1, 2014 , pp. 16-19 More about this Journal
Abstract
Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.
Keywords
Charge trapping; $NH_3$ annealing; Memory capacitors;
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