EC's/Japanese environmental regulation drive the Pb-free/Halogen-free application. Most Japanese electronics companies are preparing the green products. All items concerning to Pb-free/Halogen-ree technology should be coparallely designed and developed. More works need to clear the unknowns on Pb-free materials. Need of consensus on materials and standards. EBM (Environmental Benign Manufacturing)

Japan Jisso Technology Roadmap 2001 (JJTR2001) was published by JEITA in April 2001. Future electronic products request further higher assembly technology (ex. Finer pitch packages & components, 3D assembly, etc.) to reduce size and improve performance of the electric products. For LSI Packages, finer ball pitch technology and finer chip connection technology will be developed. For electric components, further size reduction will be developed. For Jisso (assembly) machine, finer pitch assembly and short tact time technology will be developed. Mr. Utsunomiya will present PCB roadmap next.

Fine Pitch Technology will be accelerated among next decade. Buildup Technology is Key Technology for High Density Interconnection. Novel Base Material is critical for High Speed, Area Array Flip Chip Application. Japanese PWB Technology Roadmap will be Published soon.

Chip Size Packages (CSP) are now widely used in high speed DRAM. The major driving farce of CSP development is its superior electrical performance than that of conventional package. However, the power dissipation of high speed DRAM like DDR or RAMBUS DRAM chip reaches up to near 2W. This fact makes the thermal management methods in DRAM package be more carefully considered. In this study, the thermal performances of 3 type CSPs named $\mu-BGA$^{TM}$$ $UltraCSP^{TM}$ and OmegaCSP$^{TM}$ were measured under the JEDEC specifications and their thermal characteristics were of a simulation model utilizing CFD and FEM code. The results show that there is a good agreement between the simulation and measurement within Max. 10% of $\circledM_{ja}$. And they show the wafer level CSPs have a superior thermal performance than that of $\mu-BGA.$ Especially the analysis results show that the thermal performance of wafer level CSPs are excellent fur modulo level in real operational mode without any heat sink.

1. "MLS", state of the art MCM-D wiring substrate. 2. High pin-count LSl assembly. 3. Higher speed needs higher packaging density. 4. Wiring substrate, the key of LSl packaging device. 5. "Inter-Layer Transferability", a new index for the performance of wiring substrates. 6. "MLTF package", a core-less flexible package for high pin-count LSl.

1- Buildup PCB technology is utilized to a bare chip attach substrate technology for packaging of semiconductor chip 2- Requirement for the substrate design rule is described in SIA International Technology Roadmap for Semiconductor. 3- There are seven fabrication methods of build-up technology. 4- Coating and lamination for resin and photo, and laser for micro via hope processes are available. Below $50\mu\textrm{m}$ in diameter is possible. 5- Fine pitch lines down to $30\mu\textrm{m}$ can be achieved by pattern plating with better electrical property. 6- Dielectric loss reduction is a key material improvement item for next generation build-up technology. 7- High band width up to 512 GB/s is possible with current wiring groundrule.