• Nuclear Engineering and Technology
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• v.44 no.1
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• pp.21-32
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• 2012

Fluorinated compounds mainly used in the semiconductor industry are potent greenhouse gases. Recently, thermal plasma gas scrubbers have been gradually replacing conventional burn-wet type gas scrubbers which are based on the combustion of fossil fuels because high conversion efficiency and control of byproduct generation are achievable in chemically reactive high temperature thermal plasma. Chemical equilibrium composition at high temperature and numerical analysis on a complex thermal flow in the thermal plasma decomposition system are used to predict the process of thermal decomposition of fluorinated gas. In order to increase economic feasibility of the thermal plasma decomposition process, increase of thermal efficiency of the plasma torch and enhancement of gas mixing between the thermal plasma jet and waste gas are discussed. In addition, noble thermal plasma systems to be applied in the thermal plasma gas treatment are introduced in the present paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1151-1154
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• 2003

Ultraviolet rays, OH H O radical and $O_3$ produced by the streamer discharge in water are widely used to deactivate microorganisms and remove organic contaminants in water and the dominant factor of these decomposition is the oxidized reaction of hydrogen peroxide and dissolved $O_3$ in water. In this paper, the barrier discharge was used to create plasma in a gas, liquid and solid medium and the electrode with the reactor combined barrier with packed type(BPR) was made as noncontact way against water so that the effect of water characteristic change by the erosion of electrodes exposing in water should be minimized. The active radical and $O_3$ gas generated in plasma region were reacted into the water as electrode so that at the same time a dissolved $O_3$ and hydrogen peroxide were formed in water and The change of pH and conductivity were measured.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.124-124
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• 2018

Polydopamine은 수중 접착력, 친환경 접착제, nanoparticle absorption 등 다양한 특성으로 많이 연구되고 있는 소재이다. 본 연구에서는 dopamine을 이용하여 수중 금속을 흡착시키는 thin film을 제작하였다. 종래의 Polydopamine coating 방법으로 wet coating 이 사용되고 있다. 하지만 wet 방식의 경우 시간이 오래 걸릴 뿐만 아니라 in-line, roll to roll 방식을 적용하는 것이 어렵기 때문에 생산적이지 않다. 이에 본 연구에서는 Atmospheric Pressure Plasma(APP)를 이용 하여 Polydopamine-like film을 coating 하였다. APP의 경우 vacuum system, solution tank가 필요 없고 in-line, roll to roll 방식을 적용 할 수 있기 때문에 더 경제적이고 생산적인 공정이다. 또한 기존의 Plasma polymerization 방법은 Plasma energy가 높기 때문에 source의 분자구조가 바뀌거나 atom 단위로 분해된다. source의 분자구조가 바뀌는 "Atomic polymerization", Neiswender-Rosskamp Mechanism이 적용되면 wet 방식 coating한 film과는 다른 특성을 갖게 된다. 하지만 APP polymerization은 Plasma energy가 vacuum plasma 보다 매우 낮기 때문에 stile polymerization mechanism을 구현 하는데 적합 하다. stile polymerization mechanism은 Plasma 내부에서 polymer source를 분해 성장 시켜서 Polymer film 얻는 것이 아닌 source의 분자구조가 깨지지 않으면서 polymer growing 시키는 방법이다. dopamine source의 분자구조를 최대한 유지하려고 하는 이유는 metal absorption과 같은 특성이 dopamine chemical structure에 영향을 받기 때문이다. 많은 논문들에서 dopamine의 catechol group이 metal absorption, adhesion force에 영향을 주는 주요 인자라고 주장하고 있기 때문이다. 그래서 본 논문에서는 Dopamine source의 형태를 보존하면서 Polymerization 하는 방법으로 APP process를 사용 하여 낮은 전압에서 Polydopamine-like film을 제작 하였다. APP system 의 Plasma 방전부 에 Dopamine source를 유입하기 위하여 본 논문에서는 Piezo Spray 방식을 사용 하였다. Dopamine을 evaporator 하는 것이 어렵고 chemical composition이 유사한 monomer를 사용해서 Plasma Polymerization으로 Dopamine 분자 구조를 재현하는 것도 어렵다. 그래서 본 연구에서는 Dopamine을 water에 immerse 하고 Dopamine solution을 mist 상태로 만들어서 Plasma discharge area에 유입하였다. 이러한 방법으로 만들어진 film은 Polydopamine film은 아니지만 Polydopamine film과 유사한 Chemical composition, chemical structure, metal absorption을 갖는 것을 FT-IR, SEM, XPS을 이용 하여 확인 하였다. Dopamine source의 보존에 대하여 명확하게 확인하기 위하여 FT-IR을 측정 하였다. 전압에 따른 Benzene ring, hydroxyl group의 비율을 확인 하였다. 낮은 전압으로 coating 된 Polydopamine-like film 일수록 hydroxyl group peak($3400{\sim}3000cm^{-1}$)과 비교하여 Benzene ring peak($1600{\sim}1580cm^{-1}$ and $1510{\sim}500cm^{-1}$)이 흡수를 더 많이 하는 것을 확인 할 수 있다. 이것은 Benzene ring이 파괴되지 않고 보존되는 것을 보여준다. Dopamine에서 Benzene ring은 absorption main factor인 catechol에 있는 chemical structure이다. 즉 Benzene ring peak이 높을수록 Catechol이 잘 보존 되었다는 의미 이다. Catechol의 보존은 absorption main factor가 보존 된다는 의미 이다. 이러한 Polydopamine-like film으로 As, Cr, Mg, Cu 200ppm solution에 대한 filtration 능력을 확인 하였다. As, Cr, Cu, Mg 의 제거율이 각각 약25%, 35%, 45%, 65%인 것을 확인 하였다. 이 수치는 시중에 판매되는 제품들과 비교했을 때 300%~500% 향상된 수치 이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.158-162
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• 2001

In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.659-663
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• 2021

10 m³/min (CMM) multi-pollutants abatement system was successfully developed by effectively integrating ozone oxidation, wet scrubbing, and wet electrostatic precipitation for the simultaneous removal of particulate matters (PMs) and NOx in a semiconductor fabrication process. The sophisticated control and optimization of operating parameters were conducted to maximize the destruction and removal efficiency of NOx. In particular, the stability test of a wet electrostatic precipitator was carried out in parallel for 30 days to validate the reliability of core parts including a power supply. An O₃/NO ratio, which is the most important operating parameter, was optimized to be about 1.5 and the optimization of wet scrubbing with a reducing agent made it possible to analyze the contribution of neutralization reaction.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.237-240
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• 2001

In this paper, we have presented processing technique about wet etching for silicon membrane construction formation. In order to make selective etching of backside silicon wafer, we used Si$_3$N$_4$ layer by PECVD(Plasma Enhanced Chemical Vapor Deposition). We have measured the surface thickness in backside silicon wafer after anisortropic wet etching with KOH:distilled water solutions. Through this experiment, we acquired the etching rate for 1.29${\mu}{\textrm}{m}$/min. The average rough of Si-membrane frontside and backside was 0.26${\mu}{\textrm}{m}$, 0.90${\mu}{\textrm}{m}$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.304-307
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• 2013

Reverse engineering of semiconductor devices utilizes delayering processes, in order to identify how the interconnection lines are stacked over transistor gates. Cu metal has been used in recent fabrication technologies, and de-processes becomes more difficult with the shrinking device dimensions. In this article, reverse engineering technologies to reveal the Cu interconnection lines and Cu via-plugs embedded in dielectric layers are investigated. Stacked dielectric layers are removed by $CF_4$ plasma etching, then the exposed planar Cu metal lines and via-plugs are selectively delineated by wet chemical solution, instead of the commonly used plasma-based dry etch. As a result, we have been successful in extracting the layouts of multiple layers within a system IC, and this technique can be applicable to other logic IC, analog IC, and CMOS IC, etc.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.14 no.10
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• pp.781-785
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• 2002

The effects of different surfaces on dry and wet frosting test were experimentally investigated. The results of experiment were compared by the performance evaluation coefficient (PEC). Results showed that the air-side pressure drop of lacquer coated evaporator increased by 5% as compared to the plasma treated one. It was also found that the Plasma coated evaporator is lower than lacquer coated one in the PEC ratio.

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.